FRL430D

FRL430D INTERSIL | Alldatasheet

Document overview

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Technical content

Features

• 2A, 500V, RDS(on) = 2.50Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 8.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E12 Neutrons/cm - Usable to 3E13 Neutrons/cm2

Description

The Intersil Corporation has designed a series of SECOND GENERATION hard- ened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ . Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm 2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired deviations from the data sheet. Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Specified FRL430D, R, H UNITS Continuous Drain Current A A Maximum Power Dissipation 0.20 W W W/oC oC Lead Temperature (During Soldering) June 1998

FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT

Post-Radiation Electrical SpecificationsTC = +25oC, Unless Otherwise Specified PARAMETER SYMBOL TYPE TEST CONDITIONS LIMITS UNITSMIN MAX Drain-Source Breakdown Volts (Note 4, 6) BVDSS FRL430D, R VGS = 0, ID = 1mA 500 - V (Note 5, 6) BVDSS FRL430H VGS = 0, ID = 1mA 475 - V Gate-Source Threshold Volts (Note 4, 6) VGS(th) FRL430D, R VGS = VDS, ID = 1mA 2.0 4.0 V (Note 3, 5, 6) VGS(th) FRL430H VGS = VDS, ID = 1mA 1.5 4.5 V Gate-Body Leakage Forward (Note 4, 6) IGSSF FRL430D, R VGS = 20V, VDS = 0 - 100 nA (Note 5, 6) IGSSF FRL430H VGS = 20V, VDS = 0 - 200 nA Gate-Body Leakage Reverse (Note 2, 4, 6) IGSSR FRL430D, R VGS = -20V, VDS = 0 - 100 nA (Note 2, 5, 6) IGSSR FRL430H VGS = -20V, VDS = 0 - 200 nA Zero-Gate Voltage Drain Current (Note 4, 6) IDSS FRL430D, R VGS = 0, VDS = 400V - 25 µA (Note 5, 6) IDSS FRL430H VGS = 0, VDS = 400V - 100 µA Drain-Source On-State Volts (Note 1, 4, 6) VDS(on) FRL430D, R VGS = 10V, ID = 2A - 5.25 V (Note 1, 5, 6) VDS(on) FRL430H VGS = 16V, ID = 2A - 7.88 V Drain-Source On Resistance (Note 1, 4, 6) RDS(on) FRL430D, R VGS = 10V, ID = 1A - 2.50 Ω (Note 1, 5, 6) RDS(on) FRL430H VGS = 14V, ID = 1A - 3.75 Ω NOTES: 1. Pulse test, 300µs max 2. Absolute value 3. Gamma = 300KRAD(Si) 4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E12 5. Gamma = 1000KRAD(Si). Neutron = 3E12 6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS 7. Gamma data taken 10/29/90 on TA 17635 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988 FRL430D, FRL430R, FRL430H

Typical Performance Characteristics FRL430D, FRL430R, FRL430H

FRL430D, FRL430R, FRL430H Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent 1. Rad Hard TXV Equivalent - Standard Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet 2. Rad Hard TXV Equivalent - Optional Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data D. Group A - Attributes Data Sheet - Group A Lot Traveler E. Group B - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) G. Group D - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data Class S - Equivalents 1. Rad Hard “S” Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F. Group A - Attributes Data Sheet G. Group B - Attributes Data Sheet H. Group C - Attributes Data Sheet I. Group D - Attributes Data Sheet 2. Rad Hard Max. “S” Equivalent - Optional Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 FRL430D, FRL430R, FRL430H TO-205AF

3 LEAD JEDEC TO-205AF HERMETIC METAL CAN PACKAGE

L A Ø b ØD 1 ØD h e SEATING PLANE 90o j k P 45o SYMBOL INCHES MILLIMETERS NOTESMIN MAX MIN MAX A 0.160 0.180 4.07 4.57 - Øb 0.016 0.021 0.41 0.53 2, 3 ØD 0.350 0.370 8.89 9.39 - ØD 1 0.315 0.335 8.01 8.50 - e 0.095 0.105 2.42 2.66 4 e1 0.190 0.210 4.83 5.33 4 e2 0.095 0.105 2.42 2.66 4 h 0.010 0.020 0.26 0.50 - j 0.028 0.034 0.72 0.86 - k 0.029 0.045 0.74 1.14 - L 0.500 0.560 12.70 14.22 3 P 0.075 - 1.91 - 5 NOTES: 1. These dimensions are within allowable dimensions of Rev. E of JEDEC TO-205AF outline dated 11-82. 2. Lead dimension (without solder). 3. Solder coating may vary along lead length, add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.100 inches (2.54mm) from bottom of seating plane. 5. This zone controlled for automatic handling. The variation in actual diameter within this zone shall not exceed 0.010 inches (0.254mm). 6. Lead no. 3 butt welded to stem base. 7. Controlling dimension: Inch. 8. Revision 3 dated 6-94.