FRA801G SSC | Alldatasheet

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8.0 AMPS. Glass Passivated Fast Recovery Rectifiers 09/18/2007 Rev.1.00 www.SiliconStandard.com 1

FEATURES

Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability Low power loss MECHANICAL DATA Cases: TO-220AC Molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, Lead free. Leads solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 oC /10 seconds .16”, (4.06mm) from case. Mounting position: Any Weight: 2.24 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol FRA 801G FRA 802G FRA 803G FRA 804G FRA 805G FRA 806G FRA 807G Units Maximum Recurrent Peak Rever se Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current @TC = 55 oC I(AV) 8. 0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load (JEDEC method ) IFSM 150 A Maximum Instantaneous F orward Voltage @ 8.0A VF 1. 3 V Maximum DC Rever se Current @ TC=25 oC at Rated DC B locking Voltage @ TC=125 oC IR 5.0 100 uA uA Maximum Reverse Recover y Time ( Note 2 ) Trr 150 250 500 nS Typical Juncti on Capacitance ( Note 1 ) TJ=25℃ Cj 50 pF Typical Thermal Resistance (Note 3) RθJA 3.0 o C/W Operating and Storage Temperature Range TJ ,TSTG - 65 to +150 oC Notes: 1. Measured at 1 MHz and Appl ied Reverse Voltage of 4.0 Volts D.C. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate. Dimensions in inches and (millimeters) TO-220AC .412(10.5) MAX .185(4.70) .175(4.44) .055(1.40) .045(1.14) .27(6.86) .23(5.84) .11(2.79) .10(2.54) .025(0.64) .014(0.35) .154(3.91) .148(3.74) DIA PIN1 2 .113(2.87) .103(2.62) .16(4.06) .14(3.56) .037(0.94) .027(0.68) .205(5.20) .195(4.95) .594(15.1) .587(14.9) .56(14.22) .53(13.46) PIN 1 PIN 2 CASE Pb-free; RoHS-compliant FRA801G thru FRA807G

09/18/2007 Rev.1.00 www.SiliconStandard.com 2 RATINGS AND CHARACTERISTIC CURVES (FRA801G THRU FRA807G) Tj=25 C0 Tj=125 C0 Tj=75 C0 FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 0 05100105 FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FOR W ARD SURGE CURRENT .(A) 1 2 5 10 20 10050 150 125 100 NUMBER OF CYCLES AT 60Hz TJ=125 C0 8.3ms Single Half Sine Wave JEDEC Method FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INST ANT ANEOUS FOR W ARD CURRENT .(A) 0.1 0.2 0.4 100 200 400 INSTANTANEOUS FORWARD VOLTAGE. (V) FIG.2- TYPICAL REVERSE CHARACTERISTICS 0 20 40 60 80 100 120 140 0.1 0.2 0.4 100 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.4- TYPICAL JUNCTION CAPACITANCE CAP ACIT ANCE.(pF) 0.1 0.5 1 5 10 50 100 500 1000 120 100 REVERSE VOLTAGE. (V) Tj=25 C f=1.0MHz Vsig=50mVp-p Tj=25 C Pulse Width=300 s 1% Duty Cycle o INST ANT ANEOUS REVERSE CURRENT FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50/c87 NONINDUCTIVE /c49/c87 NON INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) DUT (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms (-) (+) 10/c87 NONINDUCTIVE -1.0A -0.25A +0.5A trr 1cm SET TIME BASE FOR 5/ 10ns/ cm AVERAGE FOR W ARD CURRENT .(A) CASE TEMPERATURE. ( C) o FRA801G thru FRA807G

09/18/2007 Rev.1.00 www.SiliconStandard.com 3 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.