FRA1601G THINKISEMI | Alldatasheet

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Features

/hexstar2 Low forward voltage drop /hexstar2 Fast switching for high efficiency /hexstar2 High current capability /hexstar2 Case: TO-220AC/TO-220-2L package /hexstar2 High surge current capability /hexstar2 Weight: 2.3 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current /hexstar2 Epoxy: UL 94V-0 rate flame retardant FRA1601G thru FRA1607G Pb Free Plating Product FRA1601G thru FRA1607G

16 Amperes Heatsink Single Glass Passivated Fast Recovery Rectifier Diode

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2 Application Pb /hexstar2 Automotive Inverters and Solar Inverters /hexstar2 Plating Power Supply,SMPS and UPS /hexstar2 Car Audio Amplifiers and Sound Device Systems Rev.08T Unit : inch (mm) TO-220AC/TO-220-2L .196(5.00) .054(1.39) .038(0.96) .419(10.66) .139(3.55) MIN .624(15.87) .269(6.85) .548(13.93) .50(12.7)MIN .177(4.5)MAX .226(5.75) .163(4.16) .045(1.15) .019(0.50) .025(0.65)MAX .1(2.54).1(2.54) .387(9.85) Internal Configuration Base Backside Maximum Ratings and Electrical Characteristics Rating at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol FRA 1601G FRA 1602G FRA 1603G FRA 1604G FRA 1605G FRA 1606G FRA 1607G Units Maximum Recurrent Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Avera ge Forward Rectified Current See Fig. 1 I (AV) 16.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) I FSM 250 A Maximum Instantaneous Forward Voltage @ 16.0A V F 1.3 V Maximum DC Reverse Current @ T C =25 o C at Rated DC Blocking Voltage @ T C =125 o C I R 5.0 100 uA uA Maximum Reverse Recovery Time ( Note 1) Trr 150 250 500 nS Typical Junction Capacitance ( Note 3 ) Cj 70 pF Typical Thermal resistance ( Note 2 ) R θJC 2.0 o C/W Operating and Storage Temperature Range T J STG -65 to +150 o C Notes: 1. Reverse Recovery Test Conditions: I F =0.5A, I R =1.0A, I RR =0.25A 2. Thermal Resistance from Junction to Case Per Leg Mounted on Heatsink Size 2” x 3” x 0.25” Al-Plate. 3. Measured at 1MHz and Applied Reverse Voltage of 4.0 Volts D.C.

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.08T FRA1601G thru FRA1607G Tj=25 C Tj=125 C FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FOR WARD CURRENT . (A) 0 50 100 150 CASE TEMPERATURE. ( C) o FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FOR WARD SURGE CURRENT . (A) 1 2 5 10 20 100 50 300 250 200 150 100 NUMBER OF CYCLES AT 60Hz TJ=125 C 8.3ms Single Half Sine Wave JEDEC Method FIG.4- TYPICAL JUNCTION CAPACITANCE CAPACITANCE.(pF) 0.1 0.5 1 5 10 50 100 500 1000 150 125 100 REVERSE VOLTAGE. (V) Tj=25 C f=1.0MHz Vsig=50mVp-p FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50/c87 NONINDUCTIVE /c49/c87 NON INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) DUT (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms (-) (+) 10/c87 NONINDUCTIVE -1.0A -0.25A +0.5A trr 1cm SET TIME BASE FOR 5/ 10ns/ cm RATINGS AND CHARACTERISTIC CURVES (FRA1601G THRU FR 07G)A16 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG ROF SUOENATNATSNI TNERRUC DRA W )A(. 0.2 0.4 INSTANTANEOUS FORWARD VOLTAGE. (V) Tj=25 C Pulse Width=300 s 1% Duty Cycle o FIG.2- TYPICAL REVERSE CHARACTERISTICS PER LEG INSTANTANEOUS REVERSE CURRENT .( A ) 0 20 40 60 80 100 120 140 1000 100 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)