FR9024N KEXIN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

www.kexin.com.cn 1 MOSF ET P-Channel MOSFET FR9024N (KFR9024N) ■ Features

  • VDS (V) =-55V
  • ID =-11 A (VGS =-10V)
  • RDS(ON) ＜ 175mΩ (VGS =-10V)
  • Fast Switching
  • Fully Avalanche Rated 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Gate

2 Drain

3 Source

4 Drain

■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit VDS -55 VGS ±20 Tc = 25°C -11 Tc = 100°C -8 IDM -44 Avalanche Current IAR -6.6 Power Dissipation Tc = 25°C PD 38 W EAS 62 EAR 3.8 dv/dt -10 V/ns 110 RthJC 3.3 TJ 150 Tstg -55 to 150 Thermal Resistance.Junction- to-Ambient (PCB mount) Repetitive Avalanche Energy mJ Peak Diode Recovery dv/dt (Note.2) ID Pulsed Drain Current Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current V ℃/W Thermal Resistance.Junction- to-Case Thermal Resistance.Junction- to-Ambient RthJA Junction Temperature Junction Storage Temperature Range A Single Pulse Avalanche Energy (Note.1) Note.1: Starting TJ = 25°C, L = 2.8mH, RG = 25Ω, IAS = -6.6A. Note.2: ISD ≤ -6.6A, di/dt ≤ 240A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150°C S D G

www.kexin.com.cn2 MOSFET P-Channel MOSFET FR9024N (KFR9024N) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -55 V VDS=-55V, VGS=0V -25 VDS=-44V, VGS=0V, TJ=150℃ -250 Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -2 -4 V Static Drain-Source On-Resistance RDS(On) VGS=-10V, ID=-6.6A 175 mΩ Forward Transconductance gFS VDS=-25V, ID=-7.2A 2.5 S Input Capacitance Ciss 350 Output Capacitance Coss 170 Reverse Transfer Capacitance Crss 92 Total Gate Charge Qg 19 Gate Source Charge Qgs 5.1 Gate Drain Charge Qgd 10 Internal Drain Inductance LD 4.5 Internal Source Inductance LS 7.5 Turn-On DelayTime td(on) 13 Turn-On Rise Time tr 55 Turn-Off DelayTime td(off) 23 Turn-Off Fall Time tf 37 Body Diode Reverse Recovery Time trr 47 71 Body Diode Reverse Recovery Charge Qrr 84 130 nC Maximum Body-Diode Continuous Current IS -11 Pulsed Source Current ISM -44 Diode Forward Voltage VSD IS=-7.2 A,VGS=0V,TJ = 25°C, (Note.1) -1.6 V Zero Gate Voltage Drain Current IDSS uA VDS=-28V, ID=-7.2A,RG=24Ω,RD=3.7Ω (Note.1) VGS=0V, VDS=-25V, f=1MHz VGS=-10V, VDS=-44V, ID=-7.2A (Note.1) A nH pF nC ns IF=-7.2A,dI/dt=100A/us ,TJ = 25°C, Note.1: Pulse width ≤ 300μs; duty cycle ≤ 2%. Between lead, 6mm (0.25in.) from package and center of die contact S D G

www.kexin.com.cn 3 MOSF ET P-Channel MOSFET FR9024N (KFR9024N) ■ Typical Characterisitics Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 0.1 100 0.1 1 10 100 20µs PULSE WIDTH T = 25 CJ ° TOP BOTTOM VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V -V , Drain-to-Source Voltage (V) -I , Drain- to-Source Curren t (A) DS D -4.5V 0.1 100 0.1 1 10 100 20µs PULSE WIDTH T = 150 CJ ° TOP BOTTOM VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V -V , Drain-to-Source Voltage (V) -I , Drain- to-Source Curren t (A) DS D -4.5V -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 T , Junction Temperature( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D -10V -11A 0.1 100 4 5 6 7 8 9 10 V = -25V 20µs PULSE WIDTH DS -V , G ate-to-Source Voltage (V) -I , Drain- to-Source Curren t (A) GS D T = 150 CJ ° T = 25 CJ ° Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1 00 2 00 3 00 4 00 5 00 6 00 7 00 001011 C , C a p ac ita nc e (pF ) D SV , Drain-to-Source Voltage (V) A V = 0V , f = 1MH z C = C + C , C SHORTED C = C C = C + C GS iss gs g d ds rss g d oss ds gd C is s C o s s C rs s 1 2 1 6 2 0 0 5 1 0 1 5 2 0 2 5 G G S A -V , G a te -to -S o urc e V olta g e (V ) Q , T otal G ate C harge (nC) FOR TE ST CIRCU IT SE E FIG UR E 13 I = -7.2A V = -44V V = -28V D DS DS

www.kexin.com.cn4 MOSFE T P-Channel MOSFET FR9024N (KFR9024N) ■ Typical Characterisitics Fig 8. Maximum Safe Operating AreaFig 7. Typical Source-Drain Diode Forward Voltage 0.1 100 -V ,Source-to-Drain Voltage (V) -I , Reverse Drain Current (A) SD SD V = 0 V GS T = 25 CJ ° T = 150 CJ ° 0.1 100 1000 1 10 100 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 150 C = 25 C° C -V , Drain-to-Source Voltage (V) -I , Drain Current (A)I , Drain Current (A) DS D 10us 100us 1ms 10ms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10a. Switching Time Test Circuit Fig 10b. Switching Time Waveforms VDS -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD VGS VDD RG D.U.T. VDS 90% 10% VGS td(on) tr td(off) tf 25 50 75 100 125 150 0.0 3.0 6.0 9.0 12.0 T , Case Temperature ( C) -I , Drain Current (A) D 0.01 0.1 Notes: 1. Duty factor D = t / t 2. Peak T =P x Z + T 1 2 J DM thJC C P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE)

www.kexin.com.cn 5 MOSF ET P-Channel MOSFET FR9024N (KFR9024N) ■ Typical Characterisitics Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy Vs. Drain Current QG QGS QGD VG Charge -10V D.U.T. VDS IDIG -3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Curren t Samplin g Resistors Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V(BR ) DSS I AS R G IA S 0 .0 1Ωtp D .U .T LV D S VD D D RIV E R A 15 V -20 V + VDD 25 50 75 100 125 150 100 120 Starting T , Junction Temperature ( C) E , Single Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM -3.0A -4.2A -6.6A

www.kexin.com.cn6 MOSF ET P-Channel MOSFET FR9024N (KFR9024N) ■ Typical Characterisitics Peak Diode Recovery dv/dt Test Circuit P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period RG VDD

  • dv/dt controlled by RG
  • ISD controlled by Duty Factor "D"
  • D.U.T. - Device Under Test D.U.T* Circuit Layout Considerations
  • Low Stray Inductance
  • Ground Plane
  • Low Leakage Inductance Current Transformer * Reverse Polarity of D.U.T for P-Channel VGS [ ] [ ] * VGS = 5.0V for Logic Level and 3V Drive Devices [ ] * Fig 14. For P-Channel HEXFETS