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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- High Surge Capability DO-5 Package
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol FR70K(R)05 Unit Repetitive peak reverse voltage V RRM 800 V RMS reverse voltage VRMS 560 V FR70K05 thru FR70MR05 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Conditions FR70M(R)05 1000 700 2. Reverse polarity (R): Stud is anode.
- Types from 800 V to 1000 V VRRM Silicon Fast Recovery Diode DC blocking voltage VDC 800 V Continuous forward current IF 70 A Operating temperature Tj -55 to 150 °C Storage temperature Tstg -55 to 150 °C Parameter Symbol FR70K(R)05 Unit Diode forward voltage 1.0 25 μA 15 mA Recovery Time Maximum reverse recovery time TRR 500 nSIF=0.5 A, IR=1.0 A, IRR= 0.25 A VR = 100 V, Tj = 125 °C V1.0 500 VR = 100 V, Tj = 25 °C IF = 70 A, Tj = 25 °C TC ≤ 100 °C Conditions 870TC = 25 °C, tp = 8.3 ms 1000 Reverse current IR VF FR70M(R)05 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM A870 -55 to 150 www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 1
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Package dimensions and terminal configuration Product is marked with part number and terminal configuration. FR70K05 thru FR70MR05 DO- 5 (DO-203AB) J K G F A E D P N B C M Inches Millimeters Min Max Min Max A 1/4 –28 UNF B 0.669 0.687 17.19 17.44 E 0.422 0.453 10.72 11.50 F 0.115 0.200 2.93 5.08 P 0.140 0.175 3.56 4.45 www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 3