DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- High Surge Capability DO-5 Package
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol FR70B(R)05 F R70D(R)05 FR70G(R)05 Unit Repetitive peak reverse voltage V RRM 100 200 400 V RMS reverse voltage VRMS 70 140 280 V FR70J(R)05 600 420 FR70B05 thru FR70JR05 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Conditions Silicon Fast Recovery Diode
- Types from 100 V to 600 V VRRM 2. Reverse polarity (R): Stud is anode. DC blocking voltage VDC 100 200 400 V Continuous forward current IF 70 70 70 A Operating temperature Tj -55 to 150 -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 -55 to 150 °C Parameter Symbol FR70B(R)05 F R70D(R)05 FR70G(R)05 Unit Diode forward voltage 1.0 1.0 1.0 25 25 25 μA 15 15 15 mA Recovery Time Maximum reverse recovery time TRR 500 500 500 nS 1.0 600 870 IF=0.5 A, IR=1.0 A, IRR= 0.25 A VR = 100 V, Tj = 125 °C V 500 A870 -55 to 150 -55 to 150 FR70J(R)05 VR = 100 V, Tj = 25 °C IF = 70 A, Tj = 25 °C TC ≤ 100 °C Conditions 870 870TC = 25 °C, tp = 8.3 ms Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM Reverse current IR VF www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 1
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 2
Package dimensions and terminal configuration Product is marked with part number and terminal configuration. FR70B05 thru FR70JR05 DO- 5 (DO-203AB) J K G F A E D P N B C M Inches Millimeters Min Max Min Max A 1/4 –28 UNF B 0.669 0.687 17.19 17.44 E 0.422 0.453 10.72 11.50 F 0.115 0.200 2.93 5.08 P 0.140 0.175 3.56 4.45 www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 3