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Technical content
Features
- High Surge Capability DO-5 Package
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol FR70B(R)02 F R70D(R)02 FR70G(R)02 Unit Repetitive peak reverse voltage V RRM 100 200 400 V RMS reverse voltage VRMS 70 140 280 V 2. Reverse polarity (R): Stud is anode.
- Types from 100 V to 600 V VRRM FR70B02 thru FR70JR02 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Conditions Silicon Fast Recovery Diode FR70J(R)02 600 420 DC blocking voltage VDC 100 200 400 V Continuous forward current IF 70 70 70 A Operating temperature Tj -55 to 150 -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 -55 to 150 °C Parameter Symbol FR70B(R)02 F R70D(R)02 FR70G(R)02 Unit Diode forward voltage 1.4 1.4 1.4 25 25 25 μA 15 15 15 mA Recovery Time Maximum reverse recovery time TRR 200 200 200 nS Thermal characteristics Thermal resistance, junction - case RthJC 0.8 0.8 0.8 °C/W Reverse current IR VF IF,SM 870 IF=0.5 A, IR=1.0 A, IRR= 0.25 A VR = 100 V, Tj = 125 °C V VR = 100 V, Tj = 25 °C IF = 70 A, Tj = 25 °C TC ≤ 100 °C Conditions 870 870TC = 25 °C, tp = 8.3 ms Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave 250 0.8 A870 -55 to 150 -55 to 150 FR70J(R)02 1.4 600 www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 1
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Package dimensions and terminal configuration Product is marked with part number and terminal configuration. FR70B02 thru FR70JR02 DO- 5 (DO-203AB) J K G F A E D P N B C M Inches Millimeters Min Max Min Max A 1/4 –28 UNF B 0.669 0.687 17.19 17.44 E 0.422 0.453 10.72 11.50 F 0.115 0.200 2.93 5.08 P 0.140 0.175 3.56 4.45 www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 3