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Technical content
Features
- High Surge Capability DO-4 Package
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol FR6J(R)05 FR6K(R)05 Unit Re petitive peak reverse V 600 800 V1000 FR6M(R)05 FR6J05 thru FR6MR05 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Conditions 2. Reverse polarity (R): Stud is anode. Silicon Fast Recovery Diode
- Types from 600 V to 1000 V VRRM pp voltage VRRM 600 800 V RMS reverse voltage VRMS 420 560 V DC blocking voltage VDC 600 800 V Continuous forward current IF 66 A Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol FR6J(R)05 FR6K(R)05 Unit Diode forward voltage 1.4 1.4 25 25 μA 66 m A Recovery Time Maximum reverse recovery time TRR 500 500 nS Thermal characteristics Thermal resistance, junction - case RthJC 2.5 2.5 °C/W 135 -55 to 150 Reverse current IR VF -55 to 150 FR6M(R)05 1.4 700 1000 1000 135 VR = 50 V, Tj = 25 °C IF = 6 A, Tj = 25 °C TC ≤ 100 °C Conditions 135TC = 25 °C, tp = 8.3 ms IF=0.5 A, IR=1.0 A, IRR= 0.25 A VR = 50 V, Tj = 150 °C V 500 2.5 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM A Feb 2016 Latest v ersion of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 1
Feb 2016 Latest v ersion of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 2
Package dimensions and terminal configuration Product is marked with part number and terminal configuration. FR6J05 thru FR6MR05 DO- 4 (DO-203AA) J G F A E D P N B C M Inches Millimeters Min Max Min Max A 10-32 UNF B 0.424 0.437 10.77 11.10 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 Feb 2016 Latest v ersion of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 3