FR5305

FR5305 VBSEMI | Alldatasheet

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P-Channel 60 V (D-S) MOSFET

FEATURES

• TrenchFET ® Power MOSFET  M aterial categorization:

APPLICATIONS

 Load Swit ch Notes: a. Duty cycle  1 %. b. When mounted on 1" square PCB (FR-4 ma terial). c. See SOA curve for voltage derating. d. Package limited. PRODUCT SUMMARY VDS (V) RDS(on) ()I D (A) - 60 0.02 at VGS = - 10 V - 50 0.025 at VGS = - 4.5 V - 45 TO-252 SG D Top View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C , unless otherwise noted) Parameter Symbol Limi t Unit Drain-Source Voltage VDS - 60 V Gate-Source Vo ltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID - 50 A TC = 125 °C - 40 Pulsed Dra in Current IDM - 160 Avalanche Current IAS - 50 Single Pulse Avalanche Energya L = 0.1 mH EAS 125 mJ Power Dissipation TC = 25 °C PD 113c WTA = 25 °C 2.5b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Sym bol Typical Maximum Unit Junction-to-Ambientb t  10 s RthJA 15 18 °C/WSteady State 40 50 Juncti on-to-Case RthJC 0.82 1.1 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 FR5305 A ll data sheet.com

Notes: a. P ulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those list ed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, u nless otherwise noted) Parameter Symbol T est Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.5 - 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate V oltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - 1 µAVDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 150 °C - 100 On-State Drain Currenta ID(on) VDS = -5 V, VGS = - 10 V - 50 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 17 A 0.020 0.025 VGS = - 10 V, ID = - 40 A, TJ = 125 °C 0.030 VGS = - 10 V, ID = - 40 A, TJ = 150 °C 0.035 VGS = - 4.5 V, ID = - 14 A 0.0 Forward Transconductancea gfs VDS = - 15 V, ID = - 17 A 61 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1 MHz 2950 pFOutput Capacitance Coss 380 Reverse Transfe r Capacitance Crss 305 Total Gate Chargec Qg VDS = - 30 V, VGS = - 10 V, ID = - 40 A 110 165 nCGate-Source Chargec Qgs 19 Gate-Drain Chargec Qgd 28 Tur n-On Delay Timec td(on) VDD = - 30 V, RL = 0.6 Ω ID ≅ - 40 A, VGEN = - 10 V, RG = 6 Ω 15 23 nsRise Timec tr 70 105 Turn-Off Delay T imec td(off) 175 260 Fall Ti mec tf 175 260 Source-Drain Diode Rating s and Characteristics TC = 25 °Cb Continuous Current IS - 40 A Pulsed Current ISM - 80 Forward Voltagea VSD IF = - 40 A, VGS = 0 V - 1 - 1.6 V Reve rse Recovery Time trr IF = - 40 A, dI/dt = 100 A/µs 45 70 ns 400.025 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 FR5305 A ll data sheet.com

TYPICAL CHARACTERISTICS ( 25 °C, unless otherwise noted) Output Characteristics Tra nsconductance Capacitance VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID 3 V 012345 VGS = 10 thru 4 V 100 0 1 02 03 04 05 06 0 VGS - Gate-to-Source Voltage (V) - Transconductance (S)g fs TC = - 55 °C 25 °C 125 °C 500 1000 1500 2000 2500 3000 3500 4000 0 1 02 03 04 05 06 0 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Ciss Coss Crss Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 3.5 4.0 VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 25 °C - 55 °C TC = 125 °C 0.000 0.020 0.030 0.040 0.050 0.060 0 1 02 03 04 0 5 06 07 08 0 - On-Resistance (Ω) ID - Drain Current (A) RDS(on) VGS = 10 V VGS = 4.5 V 0 20 40 60 80 100 120 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 30 V ID = 40 A www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 FR5305 A ll data sheet.com

MAL RATINGS (25 °C, unless otherwise noted) On-Resistance vs. Junction Tem perature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (Normalized)- On-Resistance TJ - Junction Temper ature (°C) RDS(on) VGS = 10 V ID = 17 A - 50 - 25 0 25 50 75 100 125 150 Source-Drain Diod e Forward Voltage VSD - Source-to-Drain Voltage (V) - Source Current (A)I S 100 TJ = 25 °C TJ = 150 °C Drain Current vs. C ase Temperature TC - Case Temperature ( °C) - Drain Current (A)I D 0 25 50 75 100 125 150 Safe Operating Area 100 0.1 1 10 100 - Drain Current (A)I D TC = 25 °C Single Pulse RDS(on)* Limited by P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 P(t) = 1 P(t) = 0.1 BVDSS Limited VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified Normalized Thermal Transient Imp edance, Junction-to-Case Square Wave Pulse Dur ation (s) 0.1 0.01 10-4 10-3 10-2 10-1 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 Duty Cycle = 0.5 Single Pulse 0.02 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 FR5305 A ll data sheet.com

• Dimen si on L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES DIM. MIN. MAX. M IN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 FR5305 A ll data sheet.com

DS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 FR5305 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 FR5305 A ll data sheet.com