FR3518 THINKISEMI | Alldatasheet

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The TO-252/TO-251 pkg are well suited for power conversion such as DC to DC,inverter,amplifier,motor control and SMPS. (Typical) ■ R DS(on) (Max 29 m Ω) ■ Gate Charge (Typical 37nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested ■ Rohs Compliable ■ Halogen Free available ■ This N-channel enhancement mode field-effect power transis- tor using THINKISEMI’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. Parameter Max. Units V DS Drain-to-Source Voltage 80 V V GS Gate-to-Source Voltage ± 20 I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 38 I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 27 A I DM Pulsed Drain Current /G129 150 P D C = 25°C Power Dissipation 110 W Linear Derating Factor 0.71 W/°C dv/dt Peak Diode Recovery dv/dt /G131 5.2 V/ns T J Operating Junction and -55 to + 175 T STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Absolute Maximum Ratings Parameter Typ. Max. Units R θJC Junction-to-Case ––– 1.4 R θJA Junction-to-Ambient (PCB mount) /G134 ––– 40 °C/W R θJA Junction-to-Ambient ––– 110 Thermal Resistance

Page 2/8Rev.13T Dynamic @ T J = 25°C (unless otherwise specified) Static @ T J = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– V V GS = 0V, I D = 250µA (BR)DSS /∆T J Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C Reference to 25°C, I D = 1mA /G134 R DS(on) Static Drain-to-Source On-Resistance ––– 24 29 m Ω V GS = 10V, I D = 18A/G32/G132 V GS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS = V GS , I D = 250µA DS = 80V, V GS = 0V DS = 64V, V GS = 0V, T J = 150°C Gate-to-Source Forward Leakage ––– ––– 200 V GS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA V GS = -20V I GSS I DSS Drain-to-Source Leakage Current Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 34 ––– ––– S V DS = 25V, I D = 18A Q g Total Gate Charge ––– 37 56 I D = 18A Q gs Gate-to-Source Charge ––– 11 ––– nC V DS = 40V Q gd Gate-to-Drain ("Miller") Charge ––– 12 ––– V GS = 10V /G132 t d(on) Turn-On Delay Time ––– 12 ––– V DD = 40V t r D = 18A t d(off) Turn-Off Delay Time ––– 37 ––– R G = 9.1Ω t f GS = 10V/G32/G132 C iss Input Capacitance ––– 1710 ––– V GS = 0V C oss Output Capacitance ––– 270 ––– V DS = 25V C rss Reverse Transfer Capacitance ––– 33 ––– pF ƒ = 1.0MHz C oss Output Capacitance ––– 1780 ––– V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance ––– 170 ––– V GS = 0V, V DS = 64V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance ––– 330 ––– V GS = 0V, V DS = 0V to 64V /G133 ns Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy/G130 ––– 160 mJ I AR Avalanche Current/G129 ––– 18 A E AR Repetitive Avalanche Energy/G129 ––– 11 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the I SM Pulsed Source Current integral reverse (Body Diode) /G129 ––– ––– p-n junction diode. V SD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C, I S = 18A, V GS = 0V/G32/G132 t rr Reverse Recovery Time ––– 77 ––– ns T J = 25°C, I F = 18A Q rr Reverse RecoveryCharge ––– 210 ––– nC di/dt = 100A/µs /G32 /G132 t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S D Diode Characteristics 150 /G65 FR3518/FU3518

Page 3/8Rev.13T Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 0.01 0.1 100 1000 0.1 100 20µs PULSE WIDTH T = 25 C J TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 0.1 100 1000 0.1 100 20µs PULSE WIDTH T = 175 C J TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 4.0 6.0 8.0 10.0 12.0 14.0 16.0 VGS, Gate-to-Source Voltage (V) 1.00 10.00 100.00 1000.00 ID, Drain-to-Source Current (Α) T J = 25°C T J = 175°C V DS = 25V 20µs PULSE WIDTH -60 -40 -20 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 R , Drain-to-Source On Resistance (Normalized) DS(on) V I GS D 10V 38A /G84/G106/G44/G32/G74/G117/G110/G99/G116/G105/G111/G110/G32/G84/G101/G109/G112/G101/G114/G97/G116/G117/G114/G101/G32/G40°/G67/G41 FR3518/FU3518

Page 4/8Rev.13T Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0.1 100 1000 0.0 0.5 1.0 1.5 2.0 V ,Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD V = 0 V GS T = 175 C J T = 25 C J 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0.1 100 1000 ID, Drain-to-Source Current (A) Tc = 25°C Tj = 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY R DS (on) 100µsec 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 100000 C, Capacitance(pF) V GS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED C rss = C gd C oss = C ds + C gd C oss C rss C iss 0 1 02 03 04 0 QG Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) V DS = 40V V DS = 64V V DS = 16V I D = 18A FR3518/FU3518

Page 5/8Rev.13T Fig 10a. Switching Time Test Circuit V DS 90% 10% V GS t d(on) t r t d(off) t f Fig 10b. Switching Time Waveforms /G86 /G68/G83 /G80/G117/G108/G115/G101/G32/G87/G105/G100/G116/G104/G32≤ 1 /G181/G115 /G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32≤ 0.1 % /G82 /G68 /G86 /G71/G83 /G82 /G71 /G68/G46/G85/G46/G84/G46 /G86 /G71/G83 /G86 /G68/G68 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t / t 2. Peak T P x Z + T J DM thJC C P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) 100 125 150 175 T , Case Temperature ( C) I , Drain Current (A) C D LIMITED BY PACKAGE FR3518/FU3518

Page 6/8Rev.13T Q G Q GS Q GD V G Charge D.U.T. V DS I D I G 3mA V GS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS I AS R G I AS 0.01 Ω t p D.U.T LVDS - V DD DRIVER A 15V 20V 100 125 150 175 160 240 320 Starting Tj, Junction Temperature ( C) E , Single Pulse Avalanche Energy (mJ) AS I D TOP BOTTOM 7.3A 13A 18A FR3518/FU3518

Page 7/8Rev.13T P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current V GS =10V V DD I SD Driver Gate Drive D.U.T. I SD Waveform D.U.T. V DS Waveform Inductor Curent D = P.W . Period Fig 14. For N-Channel HEXFET /G174 /G32Power MOSFETs /G42 /G32/G86 /G71/G83 /G32/G61/G32/G53/G86/G32/G102/G111/G114/G32/G76/G111/G103/G105/G99/G32/G76/G101/G118/G101/G108/G32/G68/G101/G118/G105/G99/G101/G115 /G80/G101/G97/G107/G32/G68/G105/G111/G100/G101/G32/G82/G101/G99/G111/G118/G101/G114/G121/G32/G100/G118/G47/G100/G116/G32/G84/G101/G115/G116/G32/G67/G105/G114/G99/G117/G105/G116 /G131 /G132/G130 /G82 /G71 /G86 /G68/G68

  • /G100/G118/G47/G100/G116/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G82 /G71
  • /G68/G114/G105/G118/G101/G114/G32/G115/G97/G109/G101/G32/G116/G121/G112/G101/G32/G97/G115/G32/G68/G46/G85/G46/G84/G46
  • /G73 /G83/G68 /G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32/G34/G68/G34
  • /G68/G46/G85/G46/G84/G46/G32/G45/G32/G68/G101/G118/G105/G99/G101/G32/G85/G110/G100/G101/G114/G32/G84/G101/G115/G116 /G68/G46/G85/G46/G84 /G67/G105/G114/G99/G117/G105/G116/G32/G76/G97/G121/G111/G117/G116/G32/G67/G111/G110/G115/G105/G100/G101/G114/G97/G116/G105/G111/G110/G115
  • /G32/G76/G111/G119/G32/G83/G116/G114/G97/G121/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32 • /G71/G114/G111/G117/G110/G100/G32/G80/G108/G97/G110/G101 /G32/G32 • /G76/G111/G119/G32/G76/G101/G97/G107/G97/G103/G101/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32/G32/G32/G32/G32/G67/G117/G114/G114/G101/G110/G116/G32/G84/G114/G97/G110/G115/G102/G111/G114/G109/G101/G114 /G129 /G42 FR3518/FU3518

Dimensions(millimeters) Symbol Min. Max. A 2.2 2.4 A1 2.3 2.5 A2 1.00 1.10 A3 0.05 0.15 b 0.80 0.90 D 6.90 7.00 E 6.5 6.7 E1 0.5×45° 0.7×45° e 2.2 2.4 L 2.65 2.95 L1 0.65 0.95 L2 0.50 0.70 P 27° 33° Dimensions(millimeters) Symbol Min. Max. A 6.30 6.80 B 5.20 6.20 C 2.10 2.50 C1 0.85 1.25 D 0.40 0.60 E 0.50 0.70 F 0.40 0.60 G 0.70 0.90 H 1.60 2.40 L 7.70 9.80 M 5.10 5.50 N 2.09 2.49 TO-252/DPAK SMD PACKAGE OUTLINE TO-251/IPAK DIP PACKAGE OUTLINE Page 8/8Rev.13T FR3518/FU3518