FR251G ZSELEC | Alldatasheet
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Features
! Diff us ed Junction ! Low Forward Voltage Drop ! H i g h C u r r e n t C a p a b i l i t y A B A ! High Reliability ! High Surge Current Capability Me c h a n i c a l D a t a C ! C a s e : D O - 1 5 , M o l d e d P l a s t i c D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.40 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Maximum R atings and Electrical Characteristics @TA=25° C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RM S Reverse Voltage VR(RM S) 35 70 140 280 420 560 700 V A verage Rectified Output Current ( N o t e 1 ) @ T A = 75°C IO 2.5 A Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 60 A Forward V oltage @I F = 2 .5A V FM 1.3 V P eak Reverse Current @T A = 25° C At Rated DC Blocking Voltage @T A = 100° C IRM 5.0 100 µA Revers e Recovery Time (Note 2) trr 150 250 500 nS T ypical Junction Capacitance (Note 3) Cj 30 pF Operat i ng Temperature Range Tj -65 to +150 ° C S t orage Temperature Range TSTG -65 to +150 ° C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 1 of 2 FR251G – FR257G 2.5A GLASS PASSIVATED FAST RECOVERY DIODE Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com S ymbol FR251G FR252G FR253G FR254G FR255G FR256G FR257G UnitCharacteristic DO-15 Di m M in Max A 24. 5 — B 5. 50 7. 62 C 0.60 0.80 D 2.60 3.60 A ll Dimensions in mm Alldatasheet
I , PEAK FORWARD SURGE CURRENT (A)FSM 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current 100 1 10 100 C , CAPACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T = 25 C f = 1.0MHz A ° 50V DC Approx NI (Non-inductive)W 10 NIW 1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under T est trr Settimebasefor5 /10ns/cm +0.5A -0.25A -1.0ANotes: Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) 0.01 0.1 1.0 0.6 0.8 1.0 1.2 1.4 I , INSTANTANEOUS FWD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T =
25 Cj °
= 300 sm 2 of 2 FR251G – FR257G FR251G – FR257G Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 02 5 5 0 75 100 125 150 175 I , AVERAGE FWD RECTIFIED CURRENT (A)(AV) A, AMBIENT TEMPERATURE ( C) Fig. 1 Forward Derating Curve Single phase half wave Resistive or Inductive load Alldatasheet