FR1A

FR1A YEASHIN | Alldatasheet

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Technical content

FAST SWITCHING SURFACE MOUNT RECTIFIER VOLTAGE- 50 to 1000 Volts CURRENT - 1.0 Amperes

FEATURES

For surface mounted applications Low profile package Built-in strain relief Easy pick and place Fast Recovery times for high efficiency Plastic package has Underwriters Laboratory Flammability Classification 94V-O Glass passivated junction High temperature soldering : 260 °C /10 seconds at terminals Pb free product at available : 99% Sn above meet RoHS environment • substance directiv e request. MECHANICAL DATA Case: JEDEC DO-214AA molded plastic Terminals: Solde r plated, solderable per MIL-STD-750 , Method 2026 Polarity : Indicated by cathode band

• Standard packaging: 12mm tape (EIA-481) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOLS FR1A FR1B FR1D FR1G FR1J FR1K FR1M UNIT Maximum Recurrent Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rect ified Current , at TL=55°C I(AV) 1.0 A Peak Forward Surge Current 8.3ms single half sine- wave superimposed on rated load (JEDEC method) I FSM 30.0 A Maximum Instanta neous Forward Voltage at 1.0A V F 1.3 V Maximum DC Reverse Current TA=25°C at Rated DC Blocking Voltage T A=125°C I R 5.0 150 µA Maximum Reverse Recovery Time(Note 1) TJ=25°C T RR 150 250 500 ns Typical Junction Capacitance (Note 2) C J pF Maximum Thermal Resistance(Note 3) RӨJL 15.0 Operating and Storage Tempe rature Range T J STG -55 to +150 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A 2. Measured at 1 MHz and applied Vr = 4.0 volts. 3. 8.0 mm2 ( .013mm thick ) land areas. .083(2. 11) .075(1.9 1) .012(.305 ) .006(.15 2 ) .012(.31) .006(.15) .008(.20 .002(.051) .050(1.27) .030(0.76) SMB/DO-214AA Unit:inch(mm) .155(3. 94) .130(3.30) .185(4.70) .160(4.06) .096(2.44) .083(2.13) .220(5.59) .200(5.08) DATA SHEET FR1A THRU FR1M SEMICONDUCTOR NOTES : http://www.yeashin.com 1 REV.03 20150105 °C / w 30.0

RATING AND CHARACTERISTIC CURVES 1.6 1.4 1.2 1.0 150 SINGLE PHASE HALF WAVE RESISTIVE OR INDUCTIVE P.C.B MOUNTED ON 0.315×0.315" 8.0×8.0mm PAD AREAS LEAD TEMPERA TURE, •• 10 100 TJ = 25 REVERSE VOLTAGE, Vdc Fig. 1-FORWARD CURRENT DERATING CURVE Fig. 2-TYPICAL JUNCTION CAPACITANCE 1 2 5 10 20 50 100 8.3ms SINGLE HALF SINE WAVE JEDEC METHOD NUMBER OF CYCLES AT 60Hz 0.1 0.01 TJ = 25 PULSE WIDTH = 300 1%DUTY CYCLE INSTANTANEOUS FORWARD VOLTAGE, VOLTS Fig. 3-PEAK FORWARD SURGE CURRENT Fig. 4-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS NOTE:1.Rise Time = 7ns max. In p ut Im p edance = 1 me g ohm. 22 p F 2.Rise Time = 10ns max. Source Im p edance = 50 Ohms t rr +0.5A -0.25 -1.0 SET TIME 1cm BASE FOR 50 ns/cm Fig. 5-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM PEAK FORWARD SURGE CURRENT , AMPERES INSTANTANEOUS FORWARD CURRENT, AMPERES CAPACITANCE, pF AVERAGE FORWARD RECTIFIED CURRENT AMPERES NONINDUCTIVE NON INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) DUT (+) 50Vdc (approx) (-) (-) (+) NONINDUCTIVE ns FR1A THRU FR1M http://www.yeashin.com 2 REV.03 20150105