FR1601G WTE | Alldatasheet

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Technical content

Features

! G l a s s P a s s i v a t e d D i e C o n s t r u c t i o n B ! Fast Switching ! H i g h C u r r e n t C a p a b i l i t y C ! Low Reverse Leakage Current ! H i g h S u r g e C u r r e n t C a p a b i l i t y G A ! Plastic Material has UL Flammability C l a s s i f i c a t i o n 9 4 V - O P I N 1 2 3 D M e c h a n i c a l D a t a F E ! Case: Molded Plastic ! Terminals: Plated Leads Solderable per P MIL-STD-202, Method 208 ! P o l a r i t y : S e e D i a g r a m I ! Weight: 2.24 grams (approx.) L ! M o u n t i n g P o s i t i o n : A n y H ! Marking: Type Number PIN 1 - + J P I N 3 - C a s e P I N 2 K Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol FR 1601G FR 1602G FR 1603G FR 1604G FR 1605G FR 1606G FR 1607G Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage V R(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @TC = 105°C I O 16 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 150 A Forward Voltage @IF = 8.0A V FM 1.3 V P e a k R e v e r s e C u r r e n t @ TA = 25°C At Rated DC Blocking Voltage @TA = 125°C IRM 5.0 100 µA Reverse Recovery Time (Note 1) t rr 150 250 500 nS Operating and Storage Temperature Range T j, TSTG -65 to +150 °C WTE POWER SEMICONDUCTORS TO-220 Dim Min Max A 14.9 15.1 B — 10.5 C 2.62 2.87 D 3.56 4.06 E 13.46 14.22 F 0.68 0.94 G 3.74 Ø 3.91 Ø H 5.84 6.86 I 4.44 4.70 J 2.54 2.79 K 0.35 0.64 L 1.14 1.40 P 2.41 2.67 All Dimensions in mm

0 25 50 75 100 125 150 175 I , AVERAGE FORWARD CURRENT(AV) T , CASE TEMPERATURE ( C) Fig. 1, Typical Forward Current Derating Curve C ° 0.1 100 1000 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 3, Typical Instantaneous Forward Characteristics F T = 25 C Pulse Width = 300 s 1% Duty Cycle J ° m 100 200 300 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)Fsm NUMBER OF CYCLES AT 60Hz Fig. 2 Max Non-Repetitive Peak Surge Current 8.3ms Single Half Sine-Wave JEDEC Method 1.0 100 1000 1.0 10 100 C , CAPACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T = 25 C f = 1.0MHz j ° 50V DC Approx

50 NI (Non-inductive)W 10 NIW

1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Set time base for 5/10ns/cm +0.5A -0.25A -1.0ANotes: 2. Rise Time = 10ns max. Input Impedance= 50 . W W Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) FR1601G – FR1607G TO -220 2 of 3 © 2002 W on-Top Electronics

FR1601G – FR1607G TO-220 3 of 3 © 2002 Won-Top Electronics

ORDERING INFORMATION

Product No. Package Type Shipping Quantity FR1601G TO-220 50 Units/Tube FR1602G TO-220 50 Units/Tube FR1603G TO-220 50 Units/Tube FR1604G TO-220 50 Units/Tube FR1605G TO-220 50 Units/Tube FR1606G TO-220 50 Units/Tube FR1607G TO-220 50 Units/Tube Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com