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- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content
Features
- High Surge Capability DO-4 Package
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol FR12B(R)02 F R12D(R)02 FR12G(R)02 Unit Repetitive peak reverse voltage V RRM 100 200 400 V RMS reverse voltage VRMS 70 140 280 V 2. Reverse polarity (R): Stud is anode.
- Types from 100 V to 600 V VRRM FR12B02 thru FR12JR02 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Conditions Silicon Fast Recovery Diode FR12J(R)02 600 420 DC blocking voltage VDC 100 200 400 V Continuous forward current IF 12 12 12 A Operating temperature Tj -55 to 150 -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 -55 to 150 °C Parameter Symbol FR12B(R)02 F R12D(R)02 FR12G(R)02 Unit Diode forward voltage 0.8 0.8 0.8 25 25 25 μA 666 m A Recovery Time Maximum reverse recovery time TRR 200 200 200 nS Thermal characteristics Thermal resistance, junction - case RthJC 2.5 2.5 2.5 °C/W Reverse current IR VF IF,SM 180 IF=0.5 A, IR=1.0 A, IRR= 0.25 A VR = 100 V, Tj = 150 °C V VR = 100 V, Tj = 25 °C IF = 12 A, Tj = 25 °C TC ≤ 100 °C Conditions 180 180TC = 25 °C, tp = 8.3 ms Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave 250 2.5 A180 -55 to 150 -55 to 150 FR12J(R)02 0.8 600 www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 1
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Package dimensions and terminal configuration Product is marked with part number and terminal configuration. FR12B02 thru FR12JR02 DO- 4 (DO-203AA) J G F A E D P N B C M Inches Millimeters Min Max Min Max A 10-32 UNF B 0.424 0.437 10.77 11.10 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 3