FR05-12 DSK | Alldatasheet

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FEATURES

Case:JEDEC DO--41,m olded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012ounces,0.34 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,50Hz,resistive or inductive load. For capacitive load,derate by 20%. FR05 -16 FR05 -18 FR05 -20 UNITS Maximum recurrent peak reverse voltage V RRM 1600 1800 2000 V M ax imum RM S v olt age V RMS 1120 1260 1400 V Maximum DC blocking voltage V DC 1600 1800 2000 V Maximum average forward rectified current 9.5m m lead length, @T A =75 Peak forward surge current 10ms single half-sine-wave superimposed on rated load @T J =125 Maximum instantaneous forward voltage @ 0.5 A V F V Maxim um reverse current @T A =25 at rated DC blocking voltage @T A =100 Maximum reverse recovery time (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thernal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG NOTE:1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. 1500 FR05 -12 Easily cleaned with Freon Alcohol,Isopropanol and sim ilar solvents FR05 -12 - - - FR05 - 20 FAST RECOVERY RECTIFIERS VOLTAGE RANGE: 1200 --- 2000 V CURRENT: 0.5 A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FR05 -14 1500 A DO - 41 1400 0.5 1400 980 1050 FR05 -15 I F(AV) I FSM 1200 1200 840 30.0 2.0 -55 ---- + 150 A A 100.0 5.0 500 I R -55 ---- + 150 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea

10.1 1 T J -25 100 0.2 2 10 20 100 200 40.4 40 T J =25 Pulse Width=300 µ S 0.25 0.5 0.75 1 2 30.6 1 100 T J =25 8.3ms Single Half Sine-Wave 0.1 0.2 0.3 02 0 40 6 0 0.4 0.5 0.6 16080 100 120 140 200 180 Single Phase Half Wave 60H Z Resistive or Inductive Load t rr -1.0A -0.25A +0.5A 1cm PULSE GENERATOR (NOTE2) D.U.T. N.1. N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) N.1. (-) (+) AMPERES AMPERES AMPERES JUNCTION CAPACITANCE,pF FIG.5-- TYPICAL JUNCTION CAPACITANCE 2. RISE TIME=10ns MAX. SOURCE IMPEDANCE=5O AVERAGE FORWARD CURRENT FIG.3 --PEAK FORWARD SURGE CURRENT N OTE S:1.R ISE TIM E =7ns M AX. IN P U T IM P E D AN C E =1M .22pF FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM FIG.2 --FORWARD DERATING CURVE INST ANT ANEOUS FORWARD VOLT AGE,VOLT S REVERSE VOLT AGE,VOLT S FIG.4--TYPICAL FORWARD CHARACTERISTIC PEAK FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT FR05 -12 - - - FR05 - 20 SET TIM E BASE FOR 50/100 ns /cm AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60 Hz www.diode.kr Diode Semiconductor Korea