FR03S60C FUTUREWAFER | Alldatasheet
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Fast Recovery Epitaxial Diode Document Number: F22005X 14-OCT-2021 V 2.0 www.futurewafer.com.tw 1. Synopsis 1-1. General Description State of the Fast Recovery Rectifiers Specifically Designed with Optimized Performance of Forward Voltage Drop and Fast Recovery Time. The Planar Structure and The Platinum Doped Life Time Control Guarantee The Best Overall Performance, Ruggedness, and Reliability Characteristics. These Devices are Intended for use in PFC, Boost, Lighting, in the AC/DC Section of SMPS, Freewheeling and Clamp Diodes. The Extremely Optimized Stored Charge and Low Recovery Current Minimize the Switching Losses and Reduce Power Dissipation in The Switching Element. 1-2. Feature List
- Maximum Forward Voltage, V F = 1.55V ( T J = 25°C )
- 600-Volts Reverse
- High Frequency Operation 1-3. Applications
- Switch Mode Power Supply
- Power Factor Correction
- Solar Inverter
- Uninterruptible Power Supply
- High Efficiency DC/DC Converters
- Motor Drivers 1-4. Benefits
- Essentially No Switching Losses
- Higher Efficiency
- Reduction Of Heat Sink Requirements
- Parallel Devices Without Thermal Runaway
- Higher System Reliability Due To Lower Operating Temperatures 1-5. Mechanical Characteristics
- Molded JEDEC Package : SMCJ
- Packing: Tape and Reel
- Flammability rating UL 94V -0
- Halogen Free
- JEDEC MSL Classification: Level 1 SMCJ Cathode Anode
Fast Recovery Epitaxial Diode Document Number: F22005X 14-OCT-2021 V 2.0 www.futurewafer.com.tw 2. Contents
Fast Recovery Epitaxial Diode Document Number: F22005X 14-OCT-2021 V 2.0 www.futurewafer.com.tw 3. Electrical Property 3-1. Absolute Maximum Ratings 3-2. Electrical Characteristics 3-3. Thermal Characteristics
Fast Recovery Epitaxial Diode Document Number: F22005X 14-OCT-2021 V 2.0 www.futurewafer.com.tw 3-4. Reverse Recovery Waveform and Definitions
Fast Recovery Epitaxial Diode Document Number: F22005X 14-OCT-2021 V 2.0 www.futurewafer.com.tw 3-5. Ratings and Characteristics Curve TJ=25°C Fig 1. DC Current Derating Curve TM - Mount Temperature (°C) Average Forward Rectified Current, IF (A) Fig 2. Typical Instantaneous Forward Characteristics Instantaneous Forward Voltage, VF (V) Instantaneous Forward Current, IF (A) TJ=150°C TM measured at cathode terminal mount typical values Fig 3. Typical Reverse Current Characteristics Instantaneous Reverse Current, IR (uA) Reverse Voltage, VR (V) TJ=25°C TJ=100°C TJ=175°C Fig 4. Maximum Non-repetitive Forward Surge Current Number of Cycles at 60HZ Peak Forward Surge Current (A) TJ=150°C TJ=125°C
Fast Recovery Epitaxial Diode Document Number: F22005X 14-OCT-2021 V 2.0 www.futurewafer.com.tw 4. Soldering Parameters
Fast Recovery Epitaxial Diode Document Number: F22005X 14-OCT-2021 V 2.0 www.futurewafer.com.tw 5. Package Information 5-1. Dimension 5-2. PCB Pad Layout Recommendation Unit:mm Unit:mm
Fast Recovery Epitaxial Diode Document Number: F22005X 14-OCT-2021 V 2.0 www.futurewafer.com.tw 6. Packing 6-1. Taping and Reel Specification Taping Width Tape Orientation 16mm 6-2. Embossed Carrier Tape Specification Direction Of Feed Unit:mm
Fast Recovery Epitaxial Diode Document Number: F22005X 14-OCT-2021 V 2.0 www.futurewafer.com.tw 6-3. Surface Mount Reel Specification 6-4. Tape Leader and Trailer Specification Unit:mm
Fast Recovery Epitaxial Diode Document Number: F22005X 14-OCT-2021 V 2.0 www.futurewafer.com.tw 7. Ordering Information 8. Version 8-1. History 8-2. Company Profile Futurewafer Technology Co.,Ltd 台灣未來芯科技股份有限公司 TEL: +886-3-3350161 / FAX: +886-3-3350172 cherry@futurewafer.com.tw No. 286-11F, Sec. 3, Sanmin Rd., Taoyuan Dist., Taoyuan City 330, Taiwan