FR0001B SSDI | Alldatasheet
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SOLID STATE DEVICES, INC ~ =
14849 Firestone Boulevard: La Mirada,CA 90638 ~ ip 27 AMP
Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 ay 200 VOLTS — 0.100 Designer’s Data Sheet RADIATION HARDENED N-CHANNEL MOSFET FEATURES: SFFR250M: 100KRad(Si) Gamma = Hermetically Sealed, Isolated Package SFFD250M: 10KRad (Si) Gamma = ~~ Ceramic Seals ® Available with formed leads = ‘TX, TXV and S Level . Replaces: IRFM7250/8450, FRF250 R/H. This MOSFET is well suited for applications = Also available in TO-254Z, TO-258, TO-259, TO-61 and MILPACK|| exposed to radiation environments such as switching regulation, switching converters, . Second Generation Radiation Hardened Mosfet results from synchronous rectification, motor drives, relay new design concepts. drivers and drivers for high-power bipolar s Gamma: A)Meets pre-rad specifications to 100 KRad(Si) switching transistors requiring higt speed and low B)Defined end-point specs at 300 and 1000 acti) gate drive power. This type can be operated C)Performance permits limited use to 3000 KRad(Si) directly from integrated circuits. . Gamma Dot survives 3E9 Rad(Si)/sec at 500 BVDSS typically and survives 2E12 typically if current limited to IDM. This part may be supplied as a die or in other ® Photo Current is typically 30nA per Rad(Si/sec 2 packages. Reliability screening is performed in . Neutron: —A)Pre-rad specifications for 3E12 neutrons/cm SSDI's JANS and Space Station Freedom B)Usable to 3E13 neutrons 2 approved facility. . Single Even}: typically survives 1E3 ions/cm’ having an LET<35 MeV/mg/em’ and a range > 301m at 200 BVDSS MAXIMUM RATINGS CHARACTERISTIC SYMBOL value | UNIT | Drain to Source Votage [vos [200 | ons | Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TA=25°C Derate above 25°C @ 1 W/'C PACKAGE OUTLINE: TO-254 545 38r .2497 050 PIN OUT: Tae oi | SF bab PIN 1: DRAIN PIN 2: SOURCE 685 890 if PIN 3: GATE “665 38 L | iL 555 | 500 0. —t 3x 082 ttt | 150 asc (2PL) |
150 BSC
NOTE: All fications bject to change without DATA SHEET #:FRoom® [eo SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734): Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Tu=25 C (Unless Otherwise Specified) Drain to Source Breakdown Voltage ee earn (VGS-0 V, ID=1mA) BVoss Pent M Drain to Source on State Resistance penceln aia (VGS=10 V, ID=17A) eel On State Drain Current eee | (VDS>ID(on) X RDS(on) Max., VGS=10V) a7 lee. Gate Threshold Voltage ete aa (VDS=VGS, ID=1mA) pee een Forward Transconductance L ee es et {yes >ID(on) X RDS(on) Max, ear IDS=60% rated ID) Feat Zero Gate Voltage Drain Current ie L ie os a (VDS=max rated voltage, VGS=0 V) pete tse) pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) eine ears Gate to Source Leakage Forward! At rated VGS feet ag 100 Gate to Source Leakage Reverse ees 100 Total Gate Charge VGS=10 Volts Qg 6 | | 250 Gate to Source Sharge 50% rated VOS Qgs ) Gate to Drain Charge Qga 30 baie 100 Turn on Delay Time pri Vos tacon) : i 1 fie 170 Rise Time rated ID tr su) 600 Turn Off Delay Time RG=250. ta(otf) Seas] «©6580 Fall Time 0< VGS <10 tt I | 500 IS=rated ID, VGS=0 V, TJ=25°C) ise nk Diode Reverse Recovery Time res ae 1700 nsec Reverse Recovery Charge di/dt=100 A/usec leeg scree! — uc For thermal derating curves and other charcteristic curves please contact SSDI Marketing Department.