FQ07N10Q GWSEMI | Alldatasheet
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Technical content
DESCRIPTION
The device is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . 100% EAS guaranteed with full function reliability approved. Advanced high cell density Trench technology Super Low Gate Charge Green Device Available V (BR ) DSS R DS(o n) TYP SOP8 G 1 23 4 5 6 78 SSS D D DD Equivalent Circuit I D 100V 25mΩ@10V 28mΩ@4.5V
APPLICATIONS
Secondary Synchronous Rectifier LED TV Back Light
FEATURES
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 7 A Pulsed Drain Current IDM A Power Dissipation PD W Thermal Resistance from Junction to Ambient RθJA 62.5 ℃/W ℃Operating Junction and Storage Temperature Range -55~+150TJ ,Tstg 2.5 FQ Plastic-Encapsulate MOSFETS N-Channel Power MOSFET07N10Q
Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA 100 V Gate-body leakage current IGSS V DS =0V, VGS =±20V ±100 nA On characteristics Gate-threshold voltage VGS(th) V DS =VGS, ID =250µA 1.2 1.8 3.0 V VGS =10V, ID =7A 25 mΩ Static drain-source on-sate resistance RDS(on) Forward transconductance gFS VDS =5V, ID =7A 22 S Dynamic characteristics Input capacitance Ciss 2480 Output capacitance Coss 150 Reverse transfer capacitance Crss VDS =15V,VGS =0V, f =1MHz 134 pF Switching characteristics Total gate charge Qg 62 Gate-source charge Qgs 6.0 Gate-drain charge Qgd VGS=10V, VDS=60V, ID=5A nC Turn-on delay time td(on) Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time tf VDS=50V,RL=6.7Ω, VGS=10V,RG=3.3Ω, ID=7A ns Drain-Source Diode Characteristics Drain-source diode forward voltage VSD VGS =0V, IS=1A 1.2 V Continuous drain-source diode forward current IS 7 A Pulsed drain-source diode forward current I SM 28 A MOSFET ELECTRICAL CHARACTERISTICS aT =25 ℃ unless otherwise specified 4960 300 268 124 Zero gate voltage drain current IDSS VDS =80V, VGS =0V µA TJ =25℃ 100TJ =125℃ 2.6 ΩRg Gate resistance f =1MHz 11.4 27.2 34.7 16.6 VGS =4.5V, ID =5A 28 mΩ38 Notes: 1.TC=25℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 4.Guaranteed by design, not subject to production. 5.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25℃,t ≤10sec. FQ N-Channel Power MOSFET07N10Q
TJ=25℃ VDS=5V Pulsed DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) Transfer Characteristics TJ=25℃ TJ=125℃ Pulsed RDS(ON)—— VGS ON-RESISTANCE RDS(ON) (m) GATE TO SOURCE VOLTAGE VGS (V) ID=7A VGS= 4.5V TJ=25℃ Pulsed ON-RESISTANCE RDS(ON) (m) DRAIN CURRENT ID (A) ID——RDS(ON) VGS= 10V VGS=3V VGS=10V,8V,6V,4V,3.5V VGS=2.5V Output Characteristics DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) Pulsed TJ=25℃ Typical Characteristics FQ N-Channel Power MOSFET07N10Q 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 Pulsed Threshold Voltage THRESHOLD VOLTAGE VTH (V) JUNCTION TEMPERATURE TJ ( )℃ TJ=25℃ Pulsed TJ=125℃ VSD 0.2 SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V) IS —— 0 1 02 03 04 05 06 07 0 0.1 1 10 100 1000 10000 VDS=60V ID =5A Pulsed GATE TO SOURCE VOLTAGE VGS (V) Gate Charge GATE CHARGE (nC) f=1MHz Pulsed Crss Coss Ciss CAPACITANCE C (pF) DRAIN TO SOURCEVOLTAGE VDS (V) Capacitances
FQ N-Channel Power MOSFET07N10Q Plastic surface mounted package; 8 leads SOP8 PACKAGE OUTLINE Min Max Min Max A A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.007 0.010 D 4.700 5.100 0.185 0.201 e E 5.800 6.200 0.228 0.244 E1 3.800 4.000 0.150 0.157 L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° Symbol Dimensions In Millimeters Dimensions In Inches 0.050 （BSC ）1.270 （BSC ） 1.450 1.750 0.053 0.069