FQ05N10Q GWSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
DESCRIPTION
The FQ05N10Q uses advanced trench technology and design to provide excellent RDS(ON) This device is suitable for use in a wide variety of applications.
FEATURES
z Lead free product is acquired z Special process technology for high ESD capability z High density cell design for ultra low RDS(on) z Good stability and uniformity with high EAS z Excellent package for good heat dissipation APPLICATION z Power switching application z Hard switching and high frequency circuits z Uninterruptible power supply Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 5 A Pulsed Drain Current (note 1) IDM 24 A Power Dissipation(note 1) PD 1.4 W Thermal Resistance from Junction to Ambient (note 2) RθJA 89 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ V(BR)DSS RDS(on)MAX ID 100V 10 5A140mΩ@ V FQ 05N10Q Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET SOP8 Equivalent Circuit with low gate charge.
026)(7(/(&75,&$/&+$5$&7(5,67,&6 aT =25 Я unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA 100 V Zero gate voltage drain current IDSS VDS =100V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±100 nA Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 1 1.8 2 V Drain-source on-resistance (note 3) RDS(on) VGS =10V, ID =5A 103 140 m Ω Forward transconductance (note 3) gFS VDS =5V, ID =2.9A 8 S Diode forward voltage (note 3) VSD I S=5A, VGS = 0V 1.2 V DYNAMIC CHARACTERISTICS (note 4) Input capacitance Ciss 690 pF Output capacitance Coss 120 pF Reverse transfer capacitance Crss VDS =25V,VGS =0V,f =1MHz 90 pF SWITCHING CHARACTERISTICS (note 4) Turn-on delay time td(on) 11 ns Turn-on rise time tr 7.4 ns Turn-off delay time td(off) 35 ns Turn-off fall time tf VGS=10V,VDS=30V, RGEN=2.5Ω, ID =2A, RL=15Ω 9.1 ns Total gate charge Qg 15.5 nC Gate-source Charge Qgs 3.2 nC Gate-drain Charge Qgd VDS =30V,VGS =10V,ID =3A 4.7 nC Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%. 4. Guaranteed by design, not subject to producting. FQ 05N10Q Dual N-Channel MOSFET
0.01 0.1 25 50 75 100 125 0.5 1.0 1.5 2.0 2.5 100 105 110 115 120 VGS=3.5V VGS=3V VGS=10V VGS=4.5V DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) Pulsed VGS=2.5V Ta=100℃ GATE TO SOURCE VOLTAGE VGS (V) ON-RESISTANCE RDS(ON) (mΩ) ID=5A Ta=25℃ VGS——RDS(ON) DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) VDS=10V Pulsed Ta=100℃ Ta=25℃ Transfer Characteristics Ta=100℃ SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (mV) Ta=25℃ VSDIS —— Output Characteristics THRESHOLD VOLTAGE VTH (V) JUNCTION TEMPERATURE TJ ( )℃ ID=250uA Threshold Voltage VGS=4.5V ON-RESISTANCE RDS(ON) (mΩ) DRAIN CURRENT ID (A) Ta=25℃ Pulsed VGS=10V ID——RDS(ON) 7\\SLFDO&KDUDFWHULVWLFV FQ 05N10Q Dual N-Channel MOSFET
A A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.007 0.010 D 4.700 5.100 0.185 0.201 e E 5.800 6.200 0.228 0.244 E1 3.800 4.000 0.150 0.157 L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° Symbol Dimensions In Millimeters Dimensions In Inches 0.050 （BSC ）1.270 （BSC ） 1.450 1.750 0.053 0.069 FQ 05N10Q Dual N-Channel MOSFET PACKAGE OUTLINE Plastic surface mounted package; 8 leads SOP8