FPT610 FAIRCHILD | Alldatasheet
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Technical content
The FPT610 and FPT630 are miniature phototransistors with exceptionally stable characteristics. They utilize a ceramic case with transparent resin encapsulation. The spectral response, extending from 400 to 1100 nm, is compatible with daylight, tungsten and gallium arsenide sources. High illumination Sensitivity Exceptionally Stable Characteristics Can Be Staked On _087-1nch Centers Mlniature-8S x 185 x 95 Mils High Absolute Maximum Ratings Maximum Temperature and Humidity Storage Temperature -40°C to +1oo°c Operating Temperature -40°C to +100°C Pin Temperature (Soldering, 5 s) 260°C Relative Humidity at 65°C 85% Maximum Power Dissipation Total Dissipation at T A = 25°C Derate Linearly from 25°C Maximum Voltages and Currents V CE(sus)Coliector-to-Emitter Sustaining Voltage FPT610 FPT630 Ic Collector Current 100mW 1.33 mW/oC 30V 20V 50mA 4-66 FPT610 FPT630 Package Outline .185 ANODE(IR) MAX rr '4.6991 PHOTOTRANSISTOR 1 .100 1 EMITTER- 12.4501 .09512.4131 .400 (10.1601 0 MIN * o PHOTOTRANSISTO~ -COLLECTOR CATHODE(IR) --I 1.-.020 (.5081 .016 (.4081 Note. All dimensions in inches bold and millimeters (parenthesea) Tolerance unless specified z ±.O 15 (± .381)
Electrical Characteristics T A = 25°C Symbol CharacteristiC VCEO(sus) Collector-to-Emitter Sustaining Voltage (Note 1) FPT610 FPT630 VECO Emitter-to-Collector Voltage (Note 1) VCE(S81) Collector-to-Emitter Saturation Voltage (Note 2) ICEO Collector Dark Current (Note 1) ICEOI) Photo Current (Tungsten) (Note 2) FPT610 FPT630 ICEOt) Photo Current (GaAs) (Note 3) FPT610 FPT630 tr Rise Time (Note 4) FPT610 FPT630 tf Fall Time (Note 4) FPT610 FPT630 Note. 4-67 FPT610 FPT630 Min Typ 30 60 20 40 0.16 0.2 1.0 2.0 5.0 0.4 3.0 4.0 15 3.0 3.0 Max 0.33 100 1. Measured with radiation Ilux intenaity 01lea8than 0.1 /loW/em' over the spectrum Irom 100-1500 nm. 2. Meaaured at noted irradiance aa emlttad from a Tungaten lIIament lamp at a color temperature 01 2854°K. 3. These are valuea obtained at notad Irradiance aa emitted Irom a GaAa source at 900 nm. Units Test Conditions Ie = 1.0 mA V V V IE = 100/LA V Ic = 500 /LA H = 20 mW/cm 2 nA VCE = 5.0 V mA VCE = 5.0 V H = 5.0 mW/cm 2 mA VCE = 5.0 V H = 5.0 mW/cm 2 /LS Ic = 2.0 mA, RL = 1000 /Ls Ic = 2.0 mA, RL = 1000 4. Rlae time Is defined as the time required for ICE to riae from 10% to SO,*, 01 pesk value. Fall time is delined as the time required for ICE to decrease Irom SO,*, or 10,*, 01 peak value. Teat conditiona are: ICE = 4.0 mA, VCE = 5.0 V, RL = 100 n, GaAs source.