FPT100 FAIRCHILD | Alldatasheet
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a . General Purpose Silicon Planar . Phototransistor ‘ : - : General Description _. PACKAGE. : ‘The FPT100 and FPT110 are 3-terminal npn Planar FPT100 OPTO-28 . phototransistors with exceptionally stable characteristics and - _ FPTIO0A OPTO-26 : j high illumination-sensitivity. The availability of the base pin FPT100B - OPTO-26 t gives wide latitude for flexible circuit design. The case is made FPTI10 OPTO-28 ~ : of a special plastic compound with transparent resin - FPTIIOA ~ OPTO-28 encapsulation that exhibits stable characteristics under high FPT110B OPTO-28 : humidity conditions. The controlled sensitivities offered in the Os Aand B versions give the circuit designer increased - flexibility. : - - : . 3% ~ Exceptionally Stable Characteristics soe - . Controlled Sensitivities . ' ABSOLUTE MAXIMUM RATINGS - 2 See 2 2 : ‘Temperatures & Humidity ° : . : Storage Temperature -55°C to 100°C - . : Operating Temperature -55°C to 85°C : : Relative Humidity at 65°C - 85% , Power Dissipation (Notes 1 & 2) : : Total Dissipation at . Te = 26°C 200 mw > Ta= 26°C 400 mw . Voltages & Currents (Note 5) So. . . Veo Collector-to-Base Voltage > 50V : Vees Collector-to-Emitter . Sustaining Voltage (Note 3) 30V le Collector Currant 25 mA : ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 9) : SYMBOL] CHARACTERISTIC [min | TYP | MAX_| UNITS TEST CONDITIONS 3 BVeco _ | Emitter-to-Collector 7.0 Vv |le=100 pA : Breakdown Voltage (Note 5) BVcso | Collector-to-Base Breakdown V_ [tc = 100 pA Voltage (Note 5) NOTES: . 41. Those are steady state limits, The factory should be consulted on applications involving pulsed or low duty cycle operations. 2. These ratings glvea maximum junction temperature of 85¢ Cand unction-to-case thermal resistance of 800° CW (derating factor of 9.98mW/*C, anda Junetion-to-ambient thermal resistance of 600° C/W (derating factor of 1.67 mW/*C), 3. Measured at noted irradiance as emitted from a tungsten filament lamp at a color temperature of 2854° K. The effective photosensitive area is typically 1.25 mm? (FPTIODA/B) and 0.78 mm? (FPT1104/8). 4. Those are values obtained at noted irradiance as emitted from a GaAs source at 900 nm. - 6. Measured with radiation flux intensity of less than 0.1 4W/crn* over the spectrum from 100-1500 nm. 6. Rise time is defined as the time required for Ice to rise from 10% to 90% of peak value. Fall time is defined as the time required for Ice to decrease from 90% to 10% of peak value. Test conditions are: Ve = 60 V, lee = 40 mA, Rk = 100 1, GaAs source, 7. No electrical connection to base load. 8. No electrical connection to emitter lead. 8. For product family characteratic curves, refer to Curve Sot FPT100. eed 377 i . 2 to. Bae ]