FPNH10

FPNH10 FAIRCHILD | Alldatasheet

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This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. FPNH10 Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted C EB TO-92 Symbol Characteristic Max Units FPNH10 PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/ °C R θJC Thermal Resistance, Junction to Case 125 °C/W R θJA Thermal Resistance, Junction to Ambient 357 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  2000 Fairchild Semiconductor Corporation FPNH10 Rev. A

Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR )CEO Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 25 V V(BR )CBO Collector-Base Breakdown VoltageIC = 100 µA, IE = 0 30 V V(BR )EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 3.0 V ICBO Collector Cutoff Current V CB = 25 V, IE = 0 100 nA IEBO Emitter Cutoff Current V EB = 2.0 V, IC = 0 100 nA ON CHARACTERISTICS hFE DC Current Gain I C = 4.0 mA, VCE = 10 V 60 VCE(sat) Collector-Emitter Saturation Voltage IC = 4.0 mA, IB = 0.4 mA 0.5 V VBE(on) Base-Emitter On Voltage I C = 4.0 mA, VCE = 10 V 0.95 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product I C = 4.0 mA, VCE = 10 V, f = 100 MHz

650 MHz

C cb Collector-Base Capacitance V CB = 10 V, IE = 0, f = 1.0 MHz 0.720 pF C rb Common-Base Feedback Capacitance V CB = 10 V, IE = 0, f = 1.0 MHz 0.34 0.65 pF rb’C c Collector Base Time Constant I C = 4.0 mA, VCB = 10 V, f = 31.8 MHz 9.0 ps *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10) NPN RF Transistor (continued)

(continued) Typical Characteristics Typical Pulsed Current Gain vs Collector Current 0.1 0.2 0.5 1 2 5 10 20 50 100 I - COLLECTOR CURRENT (mA) h - TYPICAL PULSED CURRENT GAINC FE 125 °C 25 °C - 40 °C Vce = 5V Collector-Emitter Saturation Voltage vs Collector Current 0.1 1 10 20 0.05 0.1 0.15 0.2 I - COLLECTOR CURRENT (mA) V - COLLECTOR-EMITTER VOLTAGE (V)CESAT 25 °C C β = 10 125 °C - 40 °C Base-Emitter Saturation Voltage vs Collector Current 0.1 1 10 20 0.3 0.4 0.5 0.6 0.7 0.8 0.9 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER VOLTAGE (V) BESAT C β = 10 25 °C 125 °C - 40 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A V = 30VCB CBO Base-Emitter ON Voltage vs Collector Current P4 2 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER ON VOLTAGE (V)BE(ON) C V = 5VCE 25 °C 125 °C - 40 °C Power Dissipation vs. Ambient Tem perature 0 25 50 75 1 00 1 25 1 50 10 0 15 0 20 0 25 0 30 0 35 0 T - TEMPE RATUR E ( C) P - POW ER DISS IPATION (W ) TO-92 o D A

(continued) Common Base Y Parameters vs. Frequency Input Admittance (S ) 100 200 500 1000 -120 -80 -40 120 f - FREQUENCY (MHz) Y - INPUT ADMITTANCE (mmhos) ib V = 10VCE I = 5 mAC g ib b ib Output Admittance P 42 (BASE) 100 200 500 1000 f - FREQUENCY (MHz) Y - OUTPUT ADMITTANCE (mmhos)ob V = 10VCE I = 5 mAC g ob b ob Forward Transfer Admittance 100 200 500 1000 -120 -80 -40 120 f - FREQUENCY (MHz) Y - FORWARD ADMITTANCE (mmhos) fb V = 10VCE I = 5 mAC g fb b fb Reverse Transfer Admittance 100 200 500 1000 f - FREQUENCY (MHz) Y - REVERSE ADMITTANCE (mmhos)rb V = 10VCE I = 5 mAC -grb -brb

(continued) Common Emitter Y Parameters vs. Frequency Input Admittance 100 200 500 1000 f - FREQUENCY (MHz) Y - INPUT ADMITTANCE (mmhos) ie V = 10VCE I = 2 mAC g ie b ie Output Admittance P( E M I T T E R ) 100 200 500 1000 f - FREQUENCY (MHz) Y - OUTPUT ADMITTANCE (mmhos) oe V = 10VCE I = 2 mAC g oe b oe Forward Transfer Admittance 100 200 500 1000 -60 -40 -20 f - FREQUENCY (MHz) Y - FORWARD ADMITTANCE (mmhos) fe V = 10VCE I = 2 mAC g fe b fe Reverse Transfer Admittance 100 200 500 1000 0.2 0.4 0.6 0.8 1.2 f - FREQUENCY (MHz) Y - REVERSE ADMITTANCE (mmhos)re V = 10VCE I = 2 mAC -gre -bre

(NOTE 2) 175 pF 50 pF

2.2 KΩΩΩΩΩ

• Vee RFC (NOTE 1) RFC 500 mHz Output into 50ΩΩΩΩΩ VCC NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long FIGURE 1: Neutralized 200 MHz pF and NF Circuit FIGURE 2: 500 MHz Oscillator Circuit 0.8-10 pF 1000 pF 2.0 pF 1000 pF 100 pF 0.8-10 pF 5.0-18 pF 1000 pF 1000 pF 1000 pF

2.0 KΩΩΩΩΩ 10 KΩΩΩΩΩ

680 ΩΩΩΩΩ Input 50 ΩΩΩΩΩ TUM VCC = 12 V L1 - L3 turns No. 16 wire, 1/2 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side T1 - Pri. 1 turn No. 16 wire Sec. 1 turn No. 18 wire NPN RF Transistor (continued) VBB

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Rev. G ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E 2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST SyncFET™ TinyLogic™ UHC™ VCX™