FPN430

FPN430 FAIRCHILD | Alldatasheet

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PNP Low Saturation Transistor FPN430 FPN430A Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics TA = 25°C unless otherwise noted These devices are designed for high current gain and low saturation voltage with collector currents up to 2.0 A continuous. Sourced from Process PB. Symbol Characteristic Max Units FPN430 / FPN430A PD Total Device Dissipation 1.0 W R θJC Thermal Resistance, Junction to Case 50 °C/W R θJA Thermal Resistance, Junction to Ambient 125 °C/W TO-226C B E  1999 Fairchild Semiconductor Corporation Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 35 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 2.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. FPN430 / FPN430A

Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units BV CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 30 V BV CBO Collector-Base Breakdown VoltageIC = 100 µA, IE = 0 35 V BV EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 5.0 V ICBO Collector Cutoff Current V CB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 100°C 100 nA µA IEBO Emitter Cutoff Current V EB = 4.0 V, IC = 0 100 nA ON CHARACTERISTICS* hFE DC Current Gain IC = 100 mA, VCE = 2.0 V 430 430A IC = 1.0 A, VCE = 2.0 V IC = 2.0 A, VCE = 2.0 V 100 250 VCE(sat) Collector-Emitter Saturation VoltageIC = 1.0 A, IB = 100 mA 430 430A IC = 2.0 A, IB = 200 mA 500 450 800 mV mV mV VBE(sat) Base-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA 1.25 V VBE(on) Base-Emitter Saturation Voltage IC = 1.0 A, VCE = 2.0 V 1.0 V SMALL SIGNAL CHARACTERISTICS C obo Output Capacitance V CB = 10 V, IE = 0, f = 1.0 MHz 25 pF FT Transition Frequency I C = 100 mA, VCE = 5.0 V, f = 100 MHz

100 MHz

PNP Low Saturation Transistor (continued) *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

Input/Output Capacitance vs Reverse Bias Voltage 0.1 0.5 1 10 20 50 100 100 120 V - COLLECTOR VOLTAGE (V) CAPACITANCE (pf) CE V = 2.0Vce C ibo C obo f = 1.0MHz Base-Emitter Saturation Voltage vs Collector Current 0.001 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.2 1.4 1.6 I - COLLECTOR CURRENT (A) V -BASE-EMITTER SATURATION VOLT AGE(V)CBESA T 25 °C - 40 °C 125 °C β = 10 Base-Emitter On Voltage vs Collector Current 0.0001 0.001 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.2 1.4 1.6 I - COLLECTOR CURRENT (A) V - BASE-EMITTER ON VOLTAGE (V) C BEON 25 °C - 40 °C 125 °C V = 2.0Vce Collector-Emitter Saturation Voltage vs Collector Current 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.2 I - COLLECTOR CURRENT (A) V - COLLECTOR-EMITTER VOLTAGE (V)C CESA T - 40°C 25°C 125°C β = 10 Current Gain vs Collector Current 0.0001 0.001 0.01 0.1 1 10 100 200 300 400 500 600 I - COLLECTOR CURRENT (A) H - CURRENT GAIN C FE 25°C 125°C - 40°C V = 2.0Vce Power Dissipatio n vs Am bient Tem pe rat ure 0 25 50 75 1 00 125 1 50 0.2 5 0.5 0.7 5 TE MPE RATU R E ( C ) P - P OWER DI SS IP A TI ON ( W) D TO- 226 FPN430 / FPN430A PNP Low Saturation Transistor (continued)

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