FPN330

FPN330 FAIRCHILD | Alldatasheet

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NPN Low Saturation Transistor FPN330 FPN330A Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NB. Symbol Characteristic Max Units FPN330 / FPN330A PD Total Device Dissipation 1.0 W R θJC Thermal Resistance, Junction to Case 50 °C/W R θJA Thermal Resistance, Junction to Ambient 125 °C/W Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 3.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C FPN330 / FPN330A TO-226C B E  1999 Fairchild Semiconductor Corporation

Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units BV CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 30 V BV CBO Collector-Base Breakdown VoltageIC = 100 µA, IE = 0 50 V BV EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 5.0 V ICBO Collector Cutoff Current V CB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 100°C 100 nA µA IEBO Emitter Cutoff Current V EB = 4.0 V, IC = 0 100 nA ON CHARACTERISTICS* hFE DC Current Gain IC = 100 mA, VCE = 2.0 V 330 330A IC = 1.0 A, VCE = 2.0 V IC = 2.0 A, VCE = 2.0 V 100 250 120 VCE(sat) Collector-Emitter Saturation VoltageIC = 1.0 A, IB = 100 mA 330 330A IC = 2.0 A, IB = 200 mA 500 450 1.0 mV mV V VBE(sat) Base-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA 1.25 V VBE(on) Base-Emitter Saturation Voltage IC = 1.0 A, VCE = 2.0 V 1.0 V SMALL SIGNAL CHARACTERISTICS C obo Output Capacitance V CB = 10 V, IE = 0, f = 1.0 MHz 30 pF FT Transition Frequency I C = 100 mA, VCE = 5.0 V, f = 100 MHz

100 MHz

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FPN330 / FPN330A NPN Low Saturation Transistor (continued)

NPN Low Saturation Transistor (continued) Base-Emitter Saturation Voltage vs Collector Current 0.001 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.2 1.4 1.6 I - COLLECTOR CURRENT (A) V -BASE-EMITTER SATURATION VOLTAGE(V)CBESAT 25 °C - 40 °C 125 °C β = 10 Base-Emitter On Voltage vs Collector Current 0.0001 0.001 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.2 1.4 I - COLLECTOR CURRENT (A) V - BASE-EMITTER ON VOLTAGE (V) C BEON 25 °C - 40 °C 125 °C V = 2.0Vce Input/Output Capacitance vs Reverse Bias Voltage 0.1 0.5 1 10 20 50 100 100 120 V - COLLECTOR VOLTAGE (V) CAPACITANCE (pf) CE f = 1.0MHz C ibo C obo Current Gain vs Collector Current 0.0001 0.001 0.01 0.1 1 10 100 200 300 400 500 600 700 800 I - COLLECTOR CURRENT (A) H - CURRENT GAIN C FE 25°C 125°C - 40°C V = 2.0Vce Collector-Emitter Saturation Voltage vs Collector Current 0.001 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.2 I - COLLECTOR CURRENT (A) V - COLLECTOR-EMITTER VOLTAGE (V)C CESA T - 40°C 25°C 125°C β = 10 Power Dissipation vs Ambient Temperature 0 25 50 75 1 00 125 1 50 0.2 5 0.5 0.7 5 TE MPE RATU R E ( C ) P - P OWER DI SS IP A TI ON ( W) D TO- 226

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