FPF3042 ONSEMI | Alldatasheet
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© 2013 Semiconductor Components Industries, LLC. www.fairchildsemi.com FPF3042 — IntelliMAX™ 18 V-Rated, Dual-Input, Single-Output, Power-Source-Selector Switch FPF3042 IntelliMAX™ 18 V-Rated, Dual-Input, Single-Output, Power-Source-Selector Switch
Features
Dual-Input, Single-Output Load Switch (DISO) Input Supply Operating Range: 4.0 V~12.4 V at VIN 4.0 V~12.4 V at VBUS Typical RON: 95 mΩ at VIN=5 V 70 mΩ at VBUS=5 V Bidirectional Switch for VIN and VBUS Slew Rate Controlled: 50 µs at VIN for < 4.7 µF COUT 90 µs at VBUS for < 4.7 µF COUT Maximum ISW: 2.7 A per Channel Break-Before-Make Transition Under-Voltage Lockout (UVLO) Over-Voltage Lockout (OVLO) Thermal Shutdown Logic CMOS IO Meets JESD76 Standard for GPIO Interface and Related Power Supply Requirements ESD Protected: Human Body Model: >3 kV Charged Device Model: >1.5 kV IEC 61000-4-2 Air Discharge: >15 kV IEC61000-4-2 Contact Discharge: >8 kV
Description
The FPF3042 is an 18 V-rated Dual-Input Single-Output (DISO) load switch consisting of two channels of slew- rate-controlled, low-on-resistance, N- channel MOSFET switches with protection features. The slew-rate- controlled turn-on characteristic prevents inrush current and the resulting excessive voltage droop on the input power rails. The input voltage range operates from 4.0 V to 12.4 V at both VBUS and VIN to align with the needs of high-voltage portable device power rails. Both V IN and V BUS have the over-voltage protection of 14 V (typical) to avoid damage to the system. VIN and VBUS bidirectional switching allows reverse current from V OUT to V IN or V BUS for On-T he-Go, (OTG) Mode. The switching is controlled by logic input EN and VIN_SEL is capable of interfacing directly with low-voltage control signal General-Purpose Input / Output (GPIO). FPF3042 is available in 1. 76 mm x 1.96 mm Wafer- Level Chip-Scale Package ( WLCSP), 16-bump, 0.4 mm pitch.
Applications
Input Power-Selection Block Supporting USB and Wireless Charging Smart Phone / Tablet PC
Ordering Information
Mark Channel Typical RON per Channel at 5 VIN Rise Time (tR) Package FPF3042UCX TR DISO 95 mΩ for VIN 50 µs for VIN 16-Bump, 1.76 mm x 1.96 mm, Wafer-Level Chip-Scale Package (WLCSP), 0.4 mm Pitch 70 mΩ for VBUS 90 µs for VBUS
Figure 3. Functional Block Diagram
Figure 4. Pin Assignment (Top View) Figure 5. Pin Assignment (Bottom View) 1 MΩ pull-down resistor is included. and status output. This signal is ignored during EN=LOW. HIGH = switch VIN to VOUT / LOW = switch VBUS to VOUT. HIGH = VIN is used for VOUT / LOW = VBUS is used for VOUT. Floating = VBUS connects to VOUT. Other Supply Input Status: Open-drain output. HIGH-Z = both VIN and VBUS are valid. LOW = the other power source is not valid.
Table 1. Truth Table
- Internal pull-down at EN.
- 1 µA pull-up current source at DF_IN.
© 2013 Semiconductor Components Industries, LLC. www.fairchildsemi.com FPF3042 — IntelliMAX™ 18 V-Rated, Dual-Input, Single-Output, Power-Source-Selector Switch Absolute Maximum Ratings Stresses exceeding the Absolute Maximum Ratings may damag e the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameters Min. Max. Unit VPIN VIN, VBUS to GND Continuous -1.4 18.0 V Pulsed, 100 ms Maximum Non-Repetitive -2.0 VOUT to GND(3) -0.3 16.0 EN, DF_IN, VIN_SEL, Other_VIN_AVA to GND -0.3 6.0 ISW Maximum Continuous Switch Current per Channel TA=25°C 2.70 A TA=65°C 2.70 TA=75°C 2.50 TA=85°C 2.25 tPD Total Power Dissipation at TA=25°C 2.25 W TJ Operating Junction Temperature -40 +150 °C TSTG Storage Junction Temperature -65 +150 °C ϴJA Thermal Resistance, Junction-to-Ambient (1in. Square Pad of 2 oz. Copper) 55(4) °C/W ESD Electrostatic Discharge Capability Human Body Model, ANSI/ESDA/JEDEC JS-001-2012 3.0 kV Charged Device Model, JESD22-C101 1.5 IEC61000-4-2 System Level(5) Air Discharge (VIN, VBUS to GND) 15.0 Contact Discharge (VIN, VBUS to GND) 8.0 Notes: 3. If an external voltage of more than 13 V is applied to VOUT, the slew rate should be <1 V/ms from 13 V. 4. Measured using 2S2P JEDEC standard PCB. 5. System-level ESD can be guaranteed by design. Recommended Operating Conditions The Recommended Operating Conditions table defines the condi tions for actual device operation. Recommended operating conditions are specified to ensure optimal pe rformance to the datasheet specifications. ON Semiconductor does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol Parameters Min. Max. Unit VPIN VIN 4.0 12.4 V VBUS 4.0 12.4 TA Ambient Operating Temperature -40 +85 °C
© 2013 Semiconductor Components Industries, LLC. www.fairchildsemi.com FPF3042 — IntelliMAX™ 18 V-Rated, Dual-Input, Single-Output, Power-Source-Selector Switch
Electrical Characteristics
VIN=4 to 12.4 V , VBUS=4 to 12.4 V , TA=-40 to 85 °C unless otherwise noted. Typical values are at V IN=VBUS=5 V, EN=HIGH and TA=25°C unless otherwise noted. Symbol Parameters Condition Min. Typ. Max. Unit VIN Input Voltage from VIN 4.0 12.4 V VBUS Input Voltage from VBUS 4.0 12.4 V IQ Quiescent Current IOUT=0 mA, EN=HIGH, VIN or VBUS=5 V 55 120 μA IOUT=0 mA, EN=5 V, VIN and VBUS=GND 33 70 μA RON On Resistance for VIN VIN=12 V, IOUT=200 mA, TA=25°C 95 mΩ VIN=8 V, IOUT=200 mA, TA=25°C 95 VIN=5 V, IOUT=200 mA, TA=25°C 95 150 VIN=5 V, IOUT=200 mA, TA=25°C to 85°C(6) 200 On Resistance for VBUS VBUS=12 V, IOUT=200 mA, TA=25°C 70 mΩ VBUS=6 V, IOUT=200 mA, TA=25°C 70 VBUS=5 V, IOUT=200 mA, TA=25°C 70 100 VBUS=5 V, IOUT=200 mA, TA=25°C to 85°C(6) 140 VIH Input Logic High Voltage VIN, VBUS = 4.0 V~12.4 V 1.15 V VIL Input Logic Low Voltage VIN, VBUS =4.0 V~12.4 V 0.52 V VEN(OTG) EN Voltage in OTG Mode(6) VIN & VBUS=Float or VIN & VBUS <VUVLO 2.5 V REN_PD Pull-Down Resistance at EN 1000 kΩ Protection VUVLO Under-Voltage Lockout Threshold VIN or VBUS Rising 3.05 3.50 4.00 V VIN or VBUS Falling 2.55 3.00 3.55 V VUVHYS Under-Voltage Lockout Hysteresis 0.5 V VOVLO Over-Voltage Lockout Threshold VIN Rising Threshold 12.9 14.0 15.0 V VIN Falling Threshold 12.4 13.5 14.5 V VBUS Rising Threshold 12.9 14.0 15.0 V VBUS Falling Threshold 12.4 13.5 14.5 V VOVHYS Over-Voltage Lockout Hysteresis VIN 0.5 V VBUS 0.5 V TSDN Thermal Shutdown Threshold 150 °C TSDNHYS Thermal Shutdown Hysteresis 20 °C Reverse Current Blocking (RCB) IRCB VIN or VBUS Current During RCB VOUT=8 V, VIN or VBUS=GND 30 μA Dynamic Characteristics tR VOUT Rise Time, VBUS(6,7) VIN=VBUS=5 V, RL=150 Ω, CL=4.7 μF, TA=25°C μs VOUT Rise Time, VIN(6,7) 50 tF VOUT Fall Time(6,7) 1.4 ms tTRAN Transition Delay(6,7) 50 100 ms tSD Selection Delay(6,7) 50 μs Notes: 6. This parameter is guaranteed by characterization and/or design ; not production tested. 7. t SD/tTRAN/tR/tF are defined in Figure 6.
Figure 6. Transition Delay (V IN=VBUS=5 V)
operating range is from 4 V to 12.4 V at VBUS and at VIN. voltage source among VIN, VBUS, and EN. regardless of DF_IN. If VIN_SEL is LOW, VBUS is selected. If VIN_SEL is HIGH, VIN is selected. Table 2. Input Power Selection by VIN_SEL selected. If DF_IN is HI GH or floating, V BUS is selected. Table 3. Input Power Selection by DF_IN than 2.5 V is required on the EN pin to operate properly. over-voltage trip level by a hysteresis voltage of 0.5 V. control circuitry is powered by EN. LOW and an unselected channel. if junction temperature exceeds 150°C to avoid damage. without an additional power path, such as a MOSFET. Figure 31. Input Power Selector for Wireless Charging System
© 2013 Semiconductor Components Industries, LLC. www.fairchildsemi.com FPF3042 — IntelliMAX™ 18 V-Rated, Dual-Input, Single-Output, Power-Source-Selector Switch Product Specific Package Information D E X Y
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