FPF2411 ONSEMI | Alldatasheet

Document overview

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Technical content

Features

 Capability: 6 V  Low RON ­ 10 mΩ at 5 V at PWRA or PWRB (Typ.) ­ 12 mΩ at 3.8 V at PWRA or PWRB (Typ .)  Maximum Current Capability: 6 A (Bi-Directional)  Ultra-Low IQ:<1 µA  Active LOW Control Pin  2 ms Long Slew Rate  Reverse Current Blocking (RCB) during OFF  Robust ESD Capability: ­ 5 kV HBM, 2 kV CDM ­ 15 kV Air Discharge ­ 8 kV Contact Discharge Under IEC 61000 -4-2

Applications

 Smartphone / Tablet PC  Mobile Devices  Portable Media Devices

Description

The FPF2411 is a 6 V / 6 A-rated bi -directional load sw itch, consisting of a slew -rate-controlled, low -on- resistance, P-channel MOSFET sw itch w ith protection features. The slew -rate-controlled turn-on characterist ic prevents inrush current and the resulting excessive voltage droop on the input pow er rails. The input voltage range operates from 2.3 V to 5.5 V. Bi-directional sw itching allow s reverse current from VOUT to V IN. The sw itching is controlled by active -LOW logic input the ONB pin. The FPF2411 is capable of interfacing directly w ith low -voltage control signal General -Purpose Input / Output (GPIO). The FPF2411 is available in 12-bump, 1.235 mm x 1.625 mm Wafer-Level Chip -Scale Package ( WLCSP) w ith 0.4 mm pitch.

Ordering Information

RON (Typ.) at 3.8 VIN Output Discharge ONB Pin Functionality Package FPF2411BUCX-F130 QR 12 mΩ No Active LOW 12-Ball Wafer-Level Chip-Scale Package (WLCSP), 3 x 4 Array, 0.4 mm Pitch, 250 µm Ball

Figure 3. Block Diagram Table 1. PWRA and PWRB can be Input or Output, Depending on Scenario Current more than ISD or IRCB is NOT allow ed. 2.3~5.5 V Open HIGH  LOW Turn-on w ith 2 ms of tR at PWRB. Open 2.3~5.5 V HIGH  LOW Turn-on w ith 2 ms of tR at PWRA. Operating current is from PWRA. No problem w ith 6 A DC current flow ing. Operating current is from PWRB. No problem w ith 6 A DC current flow ing. 2.3~5.5 V Open LOW  HIGH Turn-off w ith 1 ms of tF at PWRB. Open 2.3~5.5 V LOW  HIGH Turn-off w ith 1 ms of tF at PWRA.

www.onsemi.com FPF2411 — IntelliMAX™ 6 V / 6 A-Rated Bi-Direction Switch with Slew-Rate Control Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Min. Max. Unit VPIN PWRA, PWRB, ONB to GND -0.3 6.0 V ISW Maximum Continuous Sw itch Current 6 A tPD Total Pow er Dissipation at TA=25°C 1.48 W TJ Operating Junction Temperature -40 +150 °C TSTG Storage Junction Temperature -65 +150 °C JA Thermal Resistance, Junction-to-Ambient (1in. 2 Pad of 2 oz. Copper) 84.1(2) °C/W ESD Electrostatic Discharge Capability Human Body Model, JESD22-A114 5 kV Charged Device Model, JESD22-C101 2 IEC61000-4-2 System Level Air Discharge ( PWRA, PWRB, ONB to GND) 15 Contact Discharge ( PWRA, PWRB, ONB to GND) 8 Note: 2. Measured using 2S2P JEDEC std. PCB. Recommended Operating Conditions The Recommended Operating Conditi ons table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. On Semiconductor does not recommend exceeding them or designing to Absolut e Maximum Ratings. Symbol Parameter Min. Max. Unit VPWRn PWRA, PWRB 2.3 5.5 V TA Ambient Operating Temperature -40 85 °C

Unless otherw ise noted, VIN=2.3 to 5.5 V, TA=-40 to 85°C; typical values are at PWRA or PWRB=4.2 V and TA=25°C.

  1. VIH/VIL is tested under 50 µA current load
  2. This parameter is guaranteed by design and characteriza tion; not production tested.
  3. tDON/tDOFF/tR/tF are defined in Figure 4.

Table 2. VIH / VIL [V]

www.onsemi.com FPF2411 — IntelliMAX™ 6 V / 6 A-Rated Bi-Direction Switch with Slew-Rate Control Operation and Application Description The FPF2411 is an ultra-low-RON P-channel load sw itch w ith bi-directional controlled turn -on and Reverse Current Blocking (RCB). The core is a 12 mΩ P-channel MOSFET and controller capable of functioning over a w ide input operating range of 2.3 V to 5.5 V. The ONB pin, active -LOW; con trols the state of the sw itch. RCB functionality blocks unw anted rev erse current during OFF states by pow er sw itch isolation betw een PWRA and PWRB. Inrush Current Inrush current occurs w hen the device is turned on. Inrush current is depend ent on output capacitance and slew rate control capability, as expressed by: LOAD R INITIALIN OUTINRUSH It VVCI  w here: COUT: Output capacitance; tR: Slew rate or rise time at V OUT; VIN: Input voltage; VINITIAL: Initial voltage at COUT, usually GND; and ILOAD: Load current. Higher inrush current causes higher input voltage drop , depending on the distributed input resistance and input capacitance. High inrush current can cause problems. FPF2411 has a 3 ms of slew rate capability under 4.2 VIN at 1 µF of C OUT and 10 Ω of R L. Inrush current can be minimized and no input voltage drop appears, as show n in Figure 16. Reverse -Current Blocking The reverse-current blocking feature protects the input source against current flow from output to input w hen the load sw itch is off by changing the internal body diode direction. Bypass Capacitor To limit the voltage drop on the input supply caused by transient inrush current w hen the sw itch turns on into a discharged load capacitor ; a capacitor must be placed betw een the PWRA or PWRB and GND pins. A ceramic capacitor of a t least 1 µF placed close to the pins is usually sufficient. Board Layout For best performance, all traces should be as short as possible. To be m ost effective, the input and output capacitors should be placed close to the device to minimize the effect that parasitic trace inductance on normal and short -circuit operation. Using w ide traces or large copper planes for all pins ( PWRA, PWRB, ONB, and GND) minimizes the parasitic electrical effects and the case-to-ambient thermal impedance.

www.onsemi.com FPF2411 — IntelliMAX™ 6 V / 6 A-Rated Bi-Direction Switch with Slew-Rate Control

www.onsemi.com FPF2411 — IntelliMAX™ 6 V / 6 A-Rated Bi-Direction Switch with Slew-Rate Control

Figure 18. 12-Ball, 3x4 Array, 0.4 mm Pitch, 250 µm Ball, Wafer -Level Chip -Scale Package (WLCSP) A. NO JEDEC REGISTRATION APPLIES. B. DIMENSIONS ARE IN MILLIMETERS. ±39 MICRONS (547-625 MICRONS). G. DRAWING FILENAME: MKT-UC012ZCrev2.

0.005 C A B

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