FPF2188LUCX ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • SISO (Single Input Single Output) Surge and Over−V oltage Protection Switch
  • 200 V Surge Protection at VBUS under IEC 61000−4−5
  • Hot Plug Max = 28 V
  • VBUS V oltage Range: 2.7 V ~ 21.0 V
  • Max Continuous Current Capability: 6 A
  • Low ON−Resistance: Typical 9 m/C0087 at 5 V / 25°C
  • Selectable OVP Trip Level by GPIO
  • Ultra−fast OV Response Time: Typ 50 ns
  • Always ON LDO Output, BUS_DET
  • OTG_DET for OTG Start−up Power Supply
  • Active Discharge Path at VBUS
  • Open Drain OVP FLAGB
  • Over−Temperature Protection (OTP)

Applications

  • Mobile Handsets and Tablets MARKING DIAGRAM See detailed ordering and shipping information on page 10 of this data sheet.

ORDERING INFORMATION

29 = Specific Device Code ZZ = Assembly Lot Code YWW = Year / Work Week A = Assembly Location UU = Wafer Number JJJ−PPP = X/Y Coordinates 29ZZ YWWAUU JJJ−PPP

Figure 3. Pin Configuration (Top View) Figure 4. Pin Configuration (Bottom View) ENB D3 Input Active LOW for Power Path. Internal pull−down resistor of 1 M/C0087 is included. DIS E2 Input Active HIGH for discharge path at VBUS node. Internal pull−down resistor of 1 M/C0087 is included. OVLO_SEL E3 Input Over−Voltage Lockout Selection for VOUT path. Internal pull−down resistor of 1 M/C0087 is included. When OVLO_SEL = HIGH then OVLO is set typ 21.9 V. OV_FLAGB E4 Output Open drain output for OV state. External pull−up resistor with bias voltage are required. If not used, leaves the pin floating.

www.onsemi.com ABSOLUTE MAXIMUM RATINGS Symbol Parameter Min Max Unit VBUS VBUS to GND & VBUS to VOUT = GND or Float −0.3 28 V VOUT VOUT to GND −0.3 28 V BUS_DET BUS_DET to GND −0.3 6 V VENB_OTG_- DET_DIS_OV _FLAGB ENB, OTG_DET, DIS, OVLO_SEL or OV_FLAGB to GND −0.3 6 V IIN_VBUS_VO- UT Continuous VBUS to VOUT Current 6 A Peak VBUS to VOUT Current (5ms) 12 A IIN_BUS_DET Continuous BUS_DET Current 10 mA tPD Total Power Dissipation at TA = 25°C 1.66 W /C0068PD//C0068T Derating factor of PD over temperature −16 mW/°C TSTG Storage Junction Temperature −65 +150 °C TJ Operating Junction Temperature +150 °C TL Lead Temperature (Soldering, 10 Seconds) +260 °C TJA Thermal Resistance, Junction−to−Ambient (1in.2 pad of 2 oz. copper) 63.3 (Note1) °C/W ESD Electrostatic Discharge Capability Human Body Model, ANSI/ESDA/JEDEC JS−001 ±2 kV Charged Device Model, JESD22−C101 ±1 IEC61000−4−2 System Level Air Discharge at VBUS ±15 Contact Discharge at VBUS ±8 Surge IEC61000−4−5 VBUS −200 +200 V Hot plug IVBUS = 5 A; Vbus rising up from

0 V with slew rate > 6 V//C0109S

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured using 2S2P JEDEC std. PCB. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VBUS VBUS Operating Voltage 2.7 21.0 V VOTG_DET OTG_DET Operating Voltage 3.1 4.85 V VOUT_OTG VOUT Operating Voltage in OTG operation 5.0 5.4 V CIN (Note 2) Input Capacitance for VBUS. Minimum rating 50 V. (Note 3) 1 /C0109F COUT (Note 2) Output Capacitance for VOUT. Minimum rating 25 V. (Note 3) 1 /C0109F COTG_DET (Note 2) Capacitance for OTG_DET. Minimum rating 10 V. (Note 3) 1 /C0109F CBUS_DET (Note 2) Capacitance for BUS_DET. Minimum rating 10 V. (Note 3) 1 /C0109F TA Ambient Operating Temperature, TA −40 85 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 2. Bypass capacitor should be placed to the device as close as possible in order to reduce the parasitic inductance. 3. Each capacitor’s DC rating is depending on Samsung’s internal guidance.

www.onsemi.com ELECTRICAL CHARACTERISTICS (Unless otherwise noted, VBUS = 2.7 to 21.0 V, TA = −40 to 85°C; Typical values are at VBUS = 5 V, IIN ≤ 12 A, ENB=DIS=LOW, OVLO_SEL=GND, BUS_DET=Floating, CIN = 1 /C0109F and TA = 25°C.) Symbol Parameter Condition Min Typ Max Unit BASIC OPERATION IQ_PWR Power Input Quiescent Current enable VBUS = 5 V, ENB = LOW 140 /C0109A Power Input Quiescent Current disable VBUS = 5 V, ENB = HIGH 140 IIN_OVLO OVLO Supply Current VBUS = 15 V, VOUT = 0 V, ENB=LOW, OVLO_SEL = GND 160 /C0109A VBUS = 23 V, VOUT = 0 V, ENB=LOW, OVLO_SEL = HIGH 180 VUVLO Under−Voltage Trip Level VBUS Rising, TA= −40 to 85 °C 2.35 2.5 2.65 V VBUS Falling, TA= −40 to 85 °C 2.2 2.35 2.5 V RPD VBUS Discharge Resistance VBUS = 5 V, DIS = 1.8 V 550 /C0087 tDIS_ON VBUS Discharge ON Delay Time VOUT = 5 V. Time from DIS = HIGH to Discharge path ON 0.5 3 /C0109s tDIS_OFF VBUS Discharge OFF Delay Time VOUT = 5 V. Time from DIS = LOW to Discharge path OFF 1 3 /C0109s tDIS VBUS Discharge Time VOUT = 5 V, CBUS = 1 /C0109F, COUT=1Uf DIS = ENB = LOW /C0179 HIGH and VOUT source is removed at the same time, Time from VBUS = 5 V to 0.5 V 1.5 5 ms TSDN Thermal Shutdown (Note 4) 145 °C TSDN_HYS Thermal Shutdown Hysteresis (Note 4) 20 °C INTEGRATED BI−DIRECTIONAL TVS VRW_P Positive Reverse Working Voltage 28 V VBR_P Positive Breakdown Voltage IIN = 1 mA 30 32 34 V VCL_P Positive Clamping Voltage (Note 4) +200 V Surge (IEC61000−4−5 TA = −40°C to 85°C) 40 V IIN_PK_P Positive Peak Current During Surge test +200 V Surge (IEC61000−4−5 TA = −40°C to 85°C) 100 A VOUT_MAX Maximum VOUT During Positive Surge VBUS=11 V+200 V Surge (IEC61000−4−5), OVLO_SEL=LOW, ENB=LOW, RL=Open, no COUT, TA = −40°C to 85°C 15 V VBUS=21 V+200 V Surge (IEC61000−4−5), OVLO_SEL=HIGH, ENB=LOW, RL=Open, no COUT, TA = −40°C to 85°C 23 V VRW_N Negative Reverse Working Voltage −0.2 V VF_TVS Forward Voltage of TVS IIN = −10 mA −0.8 −0.6 −0.2 V VCL_N Negative Clamping Voltage −200 V Surge (IEC61000−4−5) −6 V IIN_PK_N Negative Peak Current During Surge test −200 V Surge (IEC61000−4−5), TA = −40°C to 85°C −100 A

www.onsemi.com ELECTRICAL CHARACTERISTICS (Unless otherwise noted, VBUS = 2.7 to 21.0 V, TA = −40 to 85°C; Typical values are at VBUS = 5 V, IIN ≤ 12 A, ENB=DIS=LOW, OVLO_SEL=GND, BUS_DET=Floating, CIN = 1 /C0109F and TA = 25°C.) Symbol UnitMaxTypMinConditionParameter VBUS TO VOUT SWITCH VOVLO Over−Voltage Trip Level VBUS Rising, OVLO_SEL=GND TA= −40 to 85°C 12.1 12.4 12.7 V VBUS Falling, OVLO_SEL=GND TA= −40 to 85°C 12.1 V VBUS Rising, OVLO_SEL=GND TA= −40 to 85°C(OTP Option) 13.4 13.7 14.0 V VBUS Falling, OVLO_SEL=GND TA= −40 to 85°C(OTP Option) 13.4 V VBUS Rising, OVLO_SEL = HIGH TA = −40°C to 85°C 21.5 21.9 22.3 V VBUS Falling, OVLO_SEL = HIGH TA = −40°C to 85°C 21.5 V RON_VOUT On−Resistance (Note 5) VBUS = 5 V, IOUT = 200 mA, TA = 25°C 9 12 m/C0087 VBUS = 12 V, IOUT = 200 mA, TA = 25°C 9 12 VBUS = 21 V, IOUT = 200 mA, TA = 25°C 9 12 tDEB_VOUT Debounce Time Time from VUVLO < VBUS < VOVLO to VOUT = 0.1 × VBUS 15 20 ms tON_VOUT Switch Turn−On Time RL = 100 /C0087, CL = 1 μF, VOUT from 0.1 × VBUS to 0.9 × VBUS 1 3 ms tOFF_OVP Switch Turn−Off Time (Note 4) RL=100 /C0087, COUT=1 /C0109F, OVLO_SEL = LOW, Time from VBUS = VBUS_OVLO to VOUT stop rising. Measured when VBUS rises from 0 V to 15 V at 14 V/1 /C0109s Slew Rate under IEC61000−4−5 spec 50 ns RL = 100 /C0087, COUT = 1 /C0109F, OVLO_SEL = HIGH, Time from VBUS = VBUS_OVLO to VOUT stop rising. Measured when VBUS rises from 0 V to

25 V at 14 V/1 /C0109s Slew Rate under

IEC61000−4−5 spec 50 ns tOFF_ENB Switch Turn−Off Time by control RL = 100 /C0087, COUT = 1/C0109F, VENB > VIH to VOUT = 0.9 × VBUS 12 18 /C0109s VOUT TO VBUS SWITCH (OTG Mode) RON_OTG On−Resistance VOUT = 5 V, IBUS = 200 mA, TA = 25°C 9 12 m/C0087 VUVLO_OTG OTG_DET Under−Voltage Lockout Level OTG_DET Rising, TA= −40 to 85°C 2.80 2.95 3.10 V OTG_DET Falling, TA= −40 to 85°C 2.80 V tDON_OTG OTG Start−up Delay Time Time from OTG_DET > UVLO_OTG to VBUS FET Fully ON 1 ms IOTG_DET Current at OTG_DET OTG_DET = 2.5 V, VOUT = 0 V, ENB = LOW, VBUS = Open, TA = −40°C to 85°C 55 70 /C0109A OTG_DET = 5 V, VOUT = 0 V, ENB = LOW, VBUS = Open, TA = −40°C to 85°C 66 120 OTG_DET = 4.5V, VOUT = 5V, ENB = LOW, VBUS open, TA = −40°C to 85°C OTG_DET = 0V, VOUT = 5V, ENB = LOW, VBUS open, TA = −40°C to 85°C

www.onsemi.com ELECTRICAL CHARACTERISTICS (Unless otherwise noted, VBUS = 2.7 to 21.0 V, TA = −40 to 85°C; Typical values are at VBUS = 5 V, IIN ≤ 12 A, ENB=DIS=LOW, OVLO_SEL=GND, BUS_DET=Floating, CIN = 1 /C0109F and TA = 25°C.) Symbol UnitMaxTypMinConditionParameter ALWAYS ON LDO, BUS_DET VBUS_DET BUS_DET Output Voltage VBUS = 5 V, IBUS_DET = 0 mA, TA = 25°C 3.8 4.0 4.2 V VBUS = 21 V, IBUS_DET = 0 mA, TA = 25°C 3.8 4.0 4.2 VBUS = 5 V, IBUS_DET = 10 mA, TA = 25°C 3.8 4.0 4.2 VBUS = 21 V, IBUS_DET = 10 mA, TA = 25°C 3.8 4.0 4.2 tSTART_BU S_DET BUS_DET Output Startup de−bounce time Time from VBUS > VUVLO to BUS_DET = 0.1 × VBUS_DET 30 ms tR_BUS_DET BUS_DET Output Rising time Time from BUS_DET = 0.1 × VBUS_DET to BUS_DET = 0.9 × VBUS_DET, CBUS_DET = 1/C0109F, RL = 10k/C0087 0.1 ms DIGITAL SIGNALS VFLAGB_OL OV_FLAGB Output LOW Voltage VIO (Pull up voltage)=1.2 V/1.8 V, Rpu = 100 k/C0087 0.36 V TFLAGB_PWR _DELAY OV_FLAGB Assertion delay Time ENB=Low, Time from VBUS ≥ VBUS_OVLO to OV_FLAGB assertion 3 /C0109s ENB=High, Time from VBUS ≥ VBUS_OVLO to OV_FLAGB assertion 3 /C0109s tFLAGB_RE C_EN OV_FLAGB Recovery de−bounce Time when enabled ENB=Low, Time from VBUS ≤ VBUS_OLVO to OV_FLAGB de−assertion 16 ms tFLAGB_RE C_DIS OV_FLAGB Recovery de−bounce Time when disabled ENB=High, Time from VBUS ≤ VBUS_OL- VO to OV_FLAGB de−assertion 100 200 /C0109s TOV_FLAG B_REC OV_FLAGB Recovery de−bounce Time when the device in thermal shutdown status Time from VBUS < VOVLO to OV_FLAGB de−assertion, device in thermal shutdown mode 3 ms RPD_ENB_ DIS_OVSEL Internal Pull−Down Resistor at ENB, DIS and OVLO_SEL pin

1 M/C0087

VIH_ENB_D IS_ OVSEL Logic Enable HIGH Voltage VBUS operating range 0.84 V VIL_ENB_DI S_ OVSEL Logic Enable LOW Voltage VBUS operating range 0.54 V IBUS_DET_ LEAK BUS_DET Leakage Current VBUS_DET = 5 V, VBUS= 0 V 1 /C0109A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Guaranteed by characterization and design. 5. Self −heating is not included

www.onsemi.com Range Top Mark Package Packing Method† FPF2188LUCX −40°C to +85°C 29 20−Ball, 0.4 mm Pitch WLCSP Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

www.onsemi.com PACKAGE DIMENSIONS WLCSP20 1.88x2.34x0.32, 0.40P CASE 567US ISSUE B

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