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Technical content

Features

„ 1.2 to 5.5V Input Voltage Range „ Typical RDS(ON) = 50mΩ @ VIN = 5.5V „ Typical RDS(ON) = 55mΩ @ VIN = 3.3V „ ESD Protected, above 2000V HBM

Applications

„ PDAs „ Cell Phones „ GPS Devices „ MP3 Players „ Digital Cameras „ Peripheral Ports „ Hot Swap Supplies „ RoHS Compliant General Description The FPF1005 & FPF1006 are low R DS P-Channel MOSFET load switches with CMOS cont rolled turn-on targeting small package load switch applications. The input voltage range operates from 1.2V to 5.5V. Switch control is by a logic input (ON) capable of interfacing directly with low voltage control signals. In FPF1006, 120 Ω on-chip load resistor is added for output quick discharge when switch is turned off. Both FPF1005 & FPF1006 are available in a small 2X2 MicroFET-6 pin plastic package. Typical Application Circuit

Ordering Information

Part Switch Input Buffer Output Discharge ON Pin Activity FPF1005 55m Ω, PMOS Schmitt NA Active HI FPF1006 55m Ω, PMOS Schmitt 120Ω Active HI OFF ON ON VIN GND FPF1005/6 VOUT TO LOAD CIN COUT BOTTOM PIN 1 TOP

www.onsemi.com FPF1005-FPF1006 IntelliMAXTM Advanced Load Management Products Functional Block Diagram Pin Configuration Pin Description Pin Name Function 4, 5 VOUT Switch Output: Output of the power switch 2, 3 VIN Supply Input: Input to the power switch and the supply voltage for the IC 6, 7 GND Ground

1 ON ON/OFF Control Input

(Optional) ESD protection FPF1005/6 VOUT VOUT ON MicroFET 2x2 6L BOTTOM VIN VIN GND GND

www.onsemi.com FPF1005-FPF1006 IntelliMAXTM Advanced Load Management Products Absolute Maximum Ratings Recommended Operating Range

Electrical Characteristics

Note 1: Package power dissipation on 1square inch pad, 2 oz. copper board Parameter Min Max Unit VIN, VOUT, ON to GND -0.3 6 V Maximum Continuous Switch Current 1.5 A Power Dissipation @ TA = 25°C (Note 1) 1.2 W Operating Temperature Range -40 85 °C Storage Temperature -65 150 °C Thermal Resistance, Junction to Ambient 86 °C/W Electrostatic Discharge Protection HBM 2000 V MM 200 V Parameter Min Max Unit VIN 1.2 5.5 V Ambient Operating Temperature, TA -40 85 °C Parameter Symbol Conditions Min Typ Max Unit Basic Operation Operating Voltage VIN 1.2 5.5 V Quiescent Current IQ IOUT = 0mA, VIN = VON 1µ A Off Supply Current IQ(off) VON = GND, OUT = open 1 µA Off Switch Current ISD(off) VON = GND, VOUT = 0V @ VIN = 5.5V, TA = 85°C 1 µA VON = GND, VOUT = 0V @ VIN = 3.3V, TA = 25°C 10 100 nA On-Resistance RON VIN = 5.5V, TA = 25°C 50 70 mΩ VIN = 3.3V, TA = 25°C 55 80 VIN = 1.5V, TA = 25°C 95 135 VIN = 1.2V, TA = 25°C 165 250 Output Pull Down Resistance R PD VIN = 3.3V, VON = 0V, TA = 25°C, FPF1006 75 120 Ω ON Input Logic Low Voltage V IL VIN = 5.5V 1.25 VVIN = 4.5V 1.10 VIN = 1.5V 0.50 ON Input Logic High Voltage V IH VIN = 5.5V 2.00 VVIN = 4.5V 1.75 VIN = 1.5V 0.75 ON Input Leakage VON = VIN or GND -1 1 µA Dynamic Turn on delay tON VIN = 3.3V, RL = 500Ω, CL = 0.1µF, TA = 25°C 10 µs Turn off delay tOFF VIN = 3.3V, RL = 500Ω, CL = 0.1µF, TA = 25°C, FPF1005 50 µs VIN = 3.3V, RL = 500Ω, CL = 0.1µF, RL_CHIP = 120Ω, TA = 25°C, FPF1006 10 µs VOUT Rise Time tR VIN = 3.3V, RL = 500Ω, CL = 0.1µF, TA = 25°C 10 µs VOUT Fall Time tF VIN = 3.3V, RL = 500Ω, CL = 0.1µF, TA = 25°C, FPF1005 100 µs VIN = 3.3V, RL = 500Ω, CL = 0.1µF, RL_CHIP = 120Ω, TA = 25°C, FPF1006 10 µs

www.onsemi.com FPF1005-FPF1006 IntelliMAXTM Advanced Load Management Products Description of Operation The FPF1005 & FPF1006 are low R DS(ON) P-Channel load switches with controlled turn- on. The core of each device is a 55mΩ P-Channel MOSFET and a controller capable of functioning over a wide input operating range of 1.2-5.5V. The ON pin, an active HI TTL compatible input, controls the state of the switch. The FPF1006 contains a 120 Ω on-chip load resistor for quick output discharge when the switch is turned off. However, V OUT pin of FPF1006 should not be connected directly to the battery source due to the discharge mechanism of the load switch.

Application Information

To limit the voltage drop on the input supply caused by transient in-rush currents when the switch turns-on into a discharged load capacitor or short-circuit, a capacitor needs to be placed between V IN and GND. A 1µF ceramic capacitor, C IN, placed close to the pins is usually sufficient. Higher values of C IN can be used to further reduce the voltage drop during higher current application. Output Capacitor A 0.1µF capacitor, C OUT, should be placed between V OUT and GND. This capacitor will prev ent parasitic board inductance from forcing VOUT below GND when the switch turns-off. Due to the integral body diode in the PMOS switch, a C IN greater than COUT is highly recommended. A C OUT greater than C IN can cause VOUT to exceed VIN when the system supply is removed. This could result in current flow through the body diode from VOUT to VIN. Board Layout For best performance, all traces should be as short as possible. To be most effective, the input and output capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have on normal and short-circuit operation. Using wide traces or large copper planes for all pins IN, V OUT, ON and GND) will help minimize the parasitic electrical effects along with minimizing the case to ambient thermal impedance. OFF ON ON VIN GND FPF1005/6 VOUT VIN = 3.3V CIN VON = 3.3V RL COUT

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