FPDB40PH60B ONSEMI | Alldatasheet

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  • Manufacturer or author: On Semiconductor
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©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FPDB40PH60B Rev. C3 FPDB40PH60B PFC SPM® 3 Series for 2-Phase Bridgeless PFC December 2013 FPDB40PH60B PFC SPM ® 3 Series for 2-Phase Bridgeless PFC

Features

  • UL Certified No. E209204 (UL1557)
  • 600 V - 40 A 2-Phase Bridgeless PFC with Integral Gate Driver and Protection
  • Very Low Thermal Resistance Using Al2O 3 DBC Substrate
  • Built-in NTC Thermistor for Temperature Monitoring
  • Built-in Shunt Resistor for Current Sensing
  • Optimized for 20kHz Switching Frequency
  • Isolation Rating: 2500 Vrms/min.

Applications

  • 2-Phase Bridgeless PFC Converter Related Source
  • AN-9041 - Bridgeless PFC SPM 3 Series Design Guide General Description The FPDB40PH60B is an advanced PFC SPM ® 3 module providing a fully-featured, high-performance Bridgeless PFC (Power Factor Correction) input power stage for consumer, medical, and industrial applications. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockout, over-current shutdown, thermal monitoring, and fault reporting. These modules also feature high-performance output diodes and shunt resistor for additional space savings and mounting convenience.

Figure 1. Package Overview

  • For IGBTs: gate drive circuit, Over-Current Protection (OCP), control supply circuit Under-Voltage Lock-Out (UVLO) Protection
  • Fault signal: corresponding to OC and UV fault
  • Built-in thermistor: temperature monitoring
  • Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input Pin Configuration

Figure 2. Top View

Figure 3. Internal Block Diagram

  1. Converter is composed of two IGBTs including four diodes and one IC which has gate driving and protection functions.

2 COM Common Supply Ground

19 R (TH) Series Resistor for The Use of Thermistor

20 V (TH) Thermistor Bias Voltage

21 V AC- Current Sensing Terminal

22 N SENSE Current Sensing Reference Terminal

24 N Negative Rail of DC-Link

25 R Output for R-Phase

26 S Output for S-Phase

27 P R Positive Rail of DC-Link

©2011 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FPDB40PH60B Rev. C3 FPDB40PH60B PFC SPM® 3 Series for 2-Phase Bridgeless PFC Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.) Converter Part Notes: 2. The maximum junction temperature rating of the power chips integrated within the PFC SPM® product is 150°C(@TC ≤ 100°C). Control Part Total System Thermal Resistance Notes: 3. For the measurement point of case temperature(TC ), please refer to Figure 2. Symbol Item Condition Rating Unit Vi Supply Voltage Applied between R - S 264 V rms Vi(Surge) Supply Voltage (Surge) Applied between R - S 500 V VPN Output Voltage Applied between P - N 450 V VPN(Surge) Output Voltage (Surge) Applied between P - N 500 V VCES Collector - Emitter Voltage 600 V ±IC Each IGBT Collector Current T C = 25°C 40 A ±ICP Each IGBT Collector Current (Peak) T C = 25°C, Under 1 ms Pulse Width 70 A PC Collector Dissipation T C = 25°C per IGBT 113 W VRRM Repetitive Peak Reverse Voltage 600 V IFSM Peak Forward Surge Current Single Half Sine-Wave 350 A PRSH Power Rating of Shunt Resistor T C < 125°C 2 W TJ Operating Junction Temperature (Note 2) -40 ~ 150 °C Symbol Item Condition Rating Unit VCC Control Supply Voltage Applied between V CC - COM 20 V VIN Input Signal Voltage Applied between IN - COM -0.3 ~ 17.0 V VFO Fault Output Supply Voltage Applied between V FO - COM -0.3 ~ V CC +0.3 V IFO Fault Output Current Sink Current at V FO Pin 5 mA VSC Current Sensing Input Voltage Applied between C SC - COM -0.3~V CC +0.3 V Symbol Item Condition Rating Unit TC Module Case Operation Temperature -20 ~ 100 °C TSTG Storage Temperature -40 ~ 150 °C VISO Isolation Voltage 60 Hz, Sinusoi dal, AC 1 Minute, Connect Pins to Heat-Sink Plate

2500 V rms

Symbol Item Condition Min. Typ. Max. Unit R (j-c)Q Junction to Case Thermal Resistance (Referenced to PKG Center) IGBT - - 1.1 °C/W R (j-c)HD High-Side Diode - - 1.9 °C/W R (j-c)LD Low-Side Diode - - 1.4 °C/W

  1. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For

the detailed information, please see Figure 4. Figure 4. Switching Time Definition

  1. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD [F]

Figure 5. R-T Curve of the Built-in Thermistor

Figure 6. Flatness Measurement Position

Figure 9. Application Example

  1. For the over-current protection, please set time constant in the range 3 ~ 4 s.

©2011 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com FPDB40PH60B Rev. C3 FPDB40PH60B PFC SPM® 3 Series for 2-Phase Bridgeless PFC Detailed Package Outline Drawings Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions, specifically the the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MO/MOD27BA.pdf

©2011 Fairchild Semiconductor Corporation 11 www.fairchildsemi.com FPDB40PH60B Rev. C3 FPDB40PH60B PFC SPM® 3 Series for 2-Phase Bridgeless PFC

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