FPDB20PH60

FPDB20PH60 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

• Low thermal resistance due to Al 2O3-DBC substrate
• 600V-20A 2-phase IGBT PWM semi-converter including a drive IC for gate driving and protection
• Typical switching frequency of 20kHz
• Isolation rating of 2500Vrms/min.

Applications

• AC 180V ~ 264V single-phase front-end rectifier Fig. 1. 26.8mm 44mm Top View Bottom View 26.8mm 44mm Top View Bottom View January, 2006

©2005 Fairchild Semiconductor Corporation FPDB20PH60 January, 2006 Integrated Power Functions

• PFC converter for single-phase AC/DC power conversion (Please refer to Fig. 3) Integrated Drive, Protection and System Control Functions
• For IGBTs: Gate drive circuit, Overcurrent circuit protection (OC), Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to a UV fault
• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input Pin Configuration Fig. 2. Top View (1) VCC(L) (2) COM (3) NC (4) IN(R) (5) IN(S) (6) VFO (21) VAC- (22) NSENSE (23) N (27) PR (15) NC (16) NC (17) NC (18) NC (19) RTH (20) VTH (24) N (25) R (26) S Case Temperature (TC) Detecting Point DBC Substrate (7) CFOD (8) CSC (9) NC (10) NC (11) NC (12) NC (13) NC (14) NC (1) VCC(L) (2) COM (3) NC (4) IN(R) (5) IN(S) (6) VFO (21) VAC- (22) NSENSE (23) NC (27) PR (15) NC (16) NC (17) NC (18) NC (19) RTH (20) VTH (24) N (25) R (26) S Case Temperature (TC) Detecting Point DBC Substrate (7) CFOD (8) CSC (9) NC (10) NC (11) NC (12) NC (13) NC (14) NC (1) VCC(L) (2) COM (3) NC (4) IN(R) (5) IN(S) (6) VFO (21) VAC- (22) NSENSE (23) N (27) PR (15) NC (16) NC (17) NC (18) NC (19) RTH (20) VTH (24) N (25) R (26) S Case Temperature (TC) Detecting Point DBC Substrate (7) CFOD (8) CSC (9) NC (10) NC (11) NC (12) NC (13) NC (14) NC (1) VCC(L) (2) COM (3) NC (4) IN(R) (5) IN(S) (6) VFO (21) VAC- (22) NSENSE (23) NC (27) PR (15) NC (16) NC (17) NC (18) NC (19) RTH (20) VTH (24) N (25) R (26) S Case Temperature (TC) Detecting Point DBC Substrate (7) CFOD (8) CSC (9) NC (10) NC (11) NC (12) NC (13) NC (14) NC

©2005 Fairchild Semiconductor Corporation FPDB20PH60 January, 2006 Pin Descriptions Internal Equivalent Circuit and Input/Output Pins Note : 1) Converter is composed of two IGBTs including four diodes and one IC which has gate driving and protection functions. Fig. 3. Pin Number Pin Name Pin Description 1V CC Common Bias Voltage for IC and IGBTs Driving

2 COM Common Supply Ground

(R) Signal Input for Low-side R-phase IGBT 5I N (S) Signal Input for Low-side S-phase IGBT 6V FO Fault Output 7C FOD Capacitor for Fault Output Duration Time Selection 8C SC Capacitor (Low-pass Filter) for Over Current Detection

19 R (TH) NTC Thermistor terminal

20 V (TH) NTC Thermistor terminal

21 V AC- Current Sensing Terminal

22 N SENSE Current Sensing Reference Terminal

24 N Negative Rail of DC–Link

25 R Output for R Phase

26 S Output for S Phase

R Positive Rail of DC–Link 3, 9~18, 23 NC No Connection CSC CFOD VFO IN(S) IN(R) COM VCC OUT(S) OUT(R) (20) V TH (19) R TH (8) C SC (7) C FOD (6) V FO (5) IN (S) (4) IN (R) (2) COM (1) VCC (27) P R (26) S (25) R (23) NC (22) N SENSE (21) V AC- Shunt Resistor NTC Thermistor Q1 Q2 (24) N

©2005 Fairchild Semiconductor Corporation FPDB20PH60 January, 2006 Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified) Converter Part Note 1. The maximum junction temperature rating of the power chips integrated within the SPM is 150 °C(@TC ≤ 100°C). However, to insure safe operation of the SPM, the average junction temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C) Control Part Total System Thermal Resistance Note : 2. For the measurement point of case temperature(TC), please refer to Fig. 2. Item Symbol Condition Rating Unit Supply Voltage V i Applied between R-S 264 V RMS Supply Voltage (Surge) V i(Surge) Applied between R-S 500 V Output Voltage V PN Applied between P- N 450 V Output Voltage (Surge) V PN(Surge) Applied between P- N 500 V Collector-emitter Voltage V CES 600 V Input Current (100% Load) I i TC < 95°C, Vi=220V, VPN= 390V, VPWM=20kHz 12 A Input Current (125% Load) I i(125%) TC < 95°C, Vi=220V, VPN= 390V, VPWM=20kHz, 1min Non-repetitive 15 A Collector Dissipation P C TC = 25°C per One IGBT 62.5 W Power Rating of Shunt Resistor P RSH TC < 125°C 1.5 W Operating Junction Temperature T J (Note 1) -20 ~ 125 °C Item Symbol Condition Rating Unit Control Supply Voltage V CC Applied between VCC - COM 20 V Input Signal Voltage V IN Applied between IN - COM -0.3~5.5 V Fault Output Supply Voltage V FO Applied between VFO - COM -0.3~V CC+0.3 V Fault Output Current I FO Sink Current at VFO Pin 5 mA Current Sensing Input Voltage V SC Applied between CSC - COM -0.3~V CC+0.3 V Item Symbol Condition Rating Unit Module Case Operation Temperature T C -20 ~ 100 °C Storage Temperature T STG -40 ~ 125 °C Isolation Voltage V ISO 60Hz, Sinusoidal, AC 1 minute, Connection Pins to DBC

2500 V rms

Item Symbol Condition Min. Typ. Max. Unit Junction to Case Thermal Resistance (Referenced to chip center) Rθ(j-c)Q IGBT - - 1.6 °C/W Rθ(j-c)HD High-side diode - - 2.4 °C/W Rθ(j-c)LD Low-side diode - - 1.9 °C/W

©2005 Fairchild Semiconductor Corporation FPDB20PH60 January, 2006 Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Converter Part Note 3. t ON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Fig. 4 Control Part Note 4. The fault-out pulse width t FOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F] Item Symbol Condition Min. Typ. Max. Unit IGBT saturation voltage V CE(sat) VCC =15V, VIN = 5V; IC =20A - 2.4 3.0 V High-side diode voltage V FH IF = 20A - 1.9 2.7 V Low-side diode voltage V FL IF = 20A - 1.1 1.5 V Switching Times t ON VPN = 400V, VCC = 15V, IC =20A VIN = 0V ↔ 5V, Inductive Load (Note 3) -6 9 0-n s tC(ON) -5 1 0-n s tOFF -4 5 0-n s tC(OFF) -1 2 0-n s trr -5 0- n s Irr -2- A Current sensing resistor R SENSE 3.6 4.0 4.4 m Ω Collector - emitter Leakage Current ICES VCE = VCES -- 2 5 0 µA Item Symbol Condition Min. Typ. Max. Unit Quiescent VCC Supply Cur- rent IQCCL VCC = 15V, IN = 0V V CC - COM - - 26 mA Fault Output Voltage V FOH VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up 4.5 - - V VFOL VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up - - 0.8 V Over Current Trip Level V SC(ref) VCC = 15V 0.45 0.5 0.55 V Supply Circuit Under- Voltage Protection UVCCD Detection Level 10.7 11.9 13.0 V UVCCR Reset Level 11.2 12.4 13.2 V Fault-out Pulse Width t FOD CFOD = 33nF (Note 4) 1.4 1.8 2.0 ms ON Threshold Voltage V IN(ON) Applied between IN - COM 3.0 - - V OFF Threshold Voltage V IN(OFF) -- 0 . 8 V Resistance of Thermistor R TH @ TC = 25°C (Note Fig. 9) - 50 - k Ω @ TC = 80°C (Note Fig. 9) - 5.76 - k Ω

©2005 Fairchild Semiconductor Corporation FPDB20PH60 January, 2006

Electrical Characteristics

Fig. 4. Switching Time Definition Mechanical Characteristics and Ratings Fig. 5. Flatness Measurement Position Item Condition Limits UnitsMin. Typ. Max. Mounting Torque Mounting Screw: - M3 Recommended 0.62N•m 0.51 0.62 0.72 N•m Device Flatness Note Fig. 5 0 - +120 µm Weight -1 5 . 0 0 - g tON tC(ON) trr Irr 10% of IC 100% of IC 90% of IC 120% of IC 15% of VCE (a) Turn-on tOFF tC(OFF) (b) Turn-off IC VCE VCE IC VIN VIN 15% of VCE 10% of IC (+) (+) (+)

©2005 Fairchild Semiconductor Corporation FPDB20PH60 January, 2006 Time Charts of SPMs Protective Function P1 : Normal operation - IGBT ON and conducting current P2 : Under voltage detection P3 : IGBT gate interrupt P4 : Fault signal generation P5 : Under voltage reset P6 : Normal operation - IGBT ON and conducting current Fig. 6. Under-Voltage Protection P1 : Normal operation - IGBT ON and conducting current P2 : Over current detection P3 : IGBT gate interrupt / Fault signal generation P4 : IGBT is slowly turned off P5 : IGBT OFF signal P6 : IGBT ON signal - but IGBT cannot be turned on during the fault Output activation P7 : IGBT OFF state P8 : Fault Output reset and normal operation start Fig. 7. Over Current Protection Internal IG BT G ate-Em itter Voltage Input Signal Output Current Fault Output Signal Control Supply Voltage UV detect UV reset Internal IG B T Gate-Emitter Voltage Input S ignal O utput C urrent Sensing Voltage Fault Output Signal OC Ref er ence Voltage (0.5V) R C F ilter D elay O C D etection

©2005 Fairchild Semiconductor Corporation FPDB20PH60 January, 2006 Fig. 8. Application Example CSC CFOD VFO IN(S) IN(R) COM VCC OUT(S) OUT(R) VTH RTH CSC CFOD VFO IN(S) IN(R) COM VCC PR S R N NSENSE VAC- Shunt Resistor NTC Thermistor Microcontroller or DSP +5V Vac Inverter PFCM R-T Graph 100 120 20 30 40 50 60 70 80 90 100 110 120 130 Temperature [ °C] Resistance [kΩ] Fig. 9. R-T Curve of the Built-in Thermistor

©2005 Fairchild Semiconductor Corporation FPDB20PH60 January, 2006 Detailed Package Outline Drawings

©2005 Fairchild Semiconductor Corporation FPDB20PH60 January, 2006 Detailed Package Outline Drawings

©2005 Fairchild Semiconductor Corporation FPDB20PH60 January, 2006 Detailed Package Outline Drawings

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Rev. I18 ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ Across the board. Around the world.™ The Power Franchise ® Programmable Active Droop™