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Document overview
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Technical content
Features
- Single phase rectifier for AC input
- 2-phase interleaved PFC
- Control IC for gate driving and protection
- Built-in NTC thermistor for monitoring over-temperature
- Low thermal resistance due to DBC substrate
- Isolation lating of 2500Vrms/min
- UL Certified No.E209024
Applications
FPAM50LH60 is an advanced smart power module of 2-phase interleaved PFC(Power Factor Correction). It combines optimized drive circuit with low-loss IGBTs and using DBC which has low thermal resistance. System reliability is further enhanced by the integrated under-voltage lock-out, over-current protection, and built-in NTC thermistor for monitoring over- temperature. Figure 1.
2 www.fairchildsemi.com FPAM50LH60 Rev. C FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC Integrated Drive, Protection and System Control Functions
- For IGBTs : Gate drive circuit, Over Current protection(SC), Control supply circuit under-voltage(U V) protection
- Fault signal : Corresponding to SC and UV fault
- Built-in thermistor: Over-temperature monitoring
- Input interface : 3.3/5V CMOS/LSTTL compatible Pin Configuration Figure 2. Top View Case temperature(TC) detecting point (1)CSC (2)COM (3)VFO (4)INX (5)INY (6)COM (7)n.c. (8)VCC (9)VCC (10)COM (11)RTH (12)VTH (13)NR (14)NR (15)n.c. (16)n.c. (17)n.c. (18)R (19)R (20)n.c. (21)n.c. (22)S (23)S (32)PR (31)NP (30)Y (29)X (28)PX (27)n.c. (26)PY (24)P (25)P Dimension unit: millimeter
Figure 3. Internal Block Diagram
1 CSC Signal input for over current detection
3 VFO Fault out
4 INX PWM input for X IGBT drive
5 INY PWM input for Y IGBT drive
11 RTH Thermister
12 VTH Thermister
26 PY Input of Diode
28 PX Input of Diode
29 X Output of X phase IGBT
30 Y Output of Y phase IGBT
31 NP Negative DC-link of IGBT
32 PR Positive DC-link of Rectifier Diode
4 www.fairchildsemi.com FPAM50LH60 Rev. C FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified) Converter Part Note: 1. The maximum junction temperature rating of the power chips integrated within the SPM is 125°C. 2. Marking “ * “ is calculation value or design factor. Control Part Total System Thermal Resistance Symbol Parameter Conditions Rating Units Vi Input Supply Voltage Applied between R-S 264 Vrms VPN Output Voltage Applied between X-NP,Y-NP, P-PX, P-PY 450 V VPN(Surge) Output Supply Voltage (Surge) Applied between X-NP,Y-NP, P-PX, P-PY 500 V VCES Collector-emitter Voltage Breakdown Voltage between X-N P,Y-NP 600 V VRRM Repetitive Peak Reverse Voltage of FRD Breakdown Voltage between P-P X, P-PY 600 V VRRMR Repetitive Peak Reverse Voltage of Rec- tifier Breakdown Voltage between P R-R, P R-S, R-NR, S-NR 900 V *IF FRD Forward Current TC = 25°C, TJ < 125°C 50 A *IFSM Peak Surge Current of FRD Non-repetitive, 60Hz single half-sine wave 500 A *IFR Rectified Forward Current TC = 25°C, TJ < 125°C 50 A *IFSMR Peak Surge Current of Rectifier Non-repetitive, 60Hz single half-sine wave 500 A ± *IC Each IGBT Collector Current TC = 25°C, TJ < 125°C 50 A ± *ICP Each IGBT Collector Current(Peak) TC = 25°C, TJ < 125°C, Under 1ms pulse width 100 A *PC Collector Dissipation TC=25°C per single IGBT 135 W TJ Operating Junction Temperature (Note 1) -40~125 °C Symbol Parameter Conditions Rating Units VCC Control Supply Voltage Applied between VCC - COM 20 V VIN Input Signal Voltage Applied between INX, INY - COM -0.3 ~ VCC+0.3 V VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC+0.3 V IFO Fault Output Current Sink Current at VFO Pin 1 mA VSC Current Sensing Input Voltage Applied between CSC - COM -0.3 ~ VCC+0.3 V Symbol Parameter Conditions Rating Units TSTG Storage Temperature -40 ~ 125 °C VISO Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection Pins to heat sink plate
2500 Vrms
Symbol Parameter Condition Min. Typ. Max. Units Rth(j-c)Q Junction to Case Thermal Resistance Each IGBT under Operating Condition - - 0.74 °C/W Rth(j-c)D Each Diode under Operating Condition - - 1.13 °C/W Rth(j-c)R Each Rectifier under Operating Condition - - 0.74 °C/W
5 www.fairchildsemi.com FPAM50LH60 Rev. C FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Converter Part Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Control Part Note: 4. TTH is the temperature of thermister itself. To know case temperature ( TC), please make the experiment considering your application. Symbol Parameter Conditions Min. Typ. Max. Units VCE(SAT) IGBT Saturation Voltage VCC = 15V, VIN = 5V, IC = 50A - 1.7 2.2 V VFF FRD Forward Voltage IF = 50A - 1.9 2.4 V VFR Rectifier Forward Voltage IFR = 50A - 1.13 1.35 V IRR Switching Characteristic VPN = 400V, VCC = 15V, IC = 25A, VIN = 0V « 5V, Inductive Load (Note 3), per single IGBT - 27 - A tRR - 45 - ns tON - 772 - ns tOFF - 1117 - ns tC(ON) - 110 - ns tC(OFF) - 125 - ns ICES Collector-Emitter Leakage Current VCES =600V - - 250 mA Symbol Parameter Conditions Min. Typ. Max. Units IQCC Quiescent VCC Supply Current VCC = 15V, INX, INY - COM = 0V, Supply current between VCC and COM - - 2.65 mA IPCC Operating VCC Supply Current VCC = 15V, fPWM = 20kHz, duty=50%, applied to one PWM signal input per single IGBT, Supply current between VCC and COM - - 7.0 mA VFOH Fault Output Voltage VSC = 0V, VFO Circuit: 10kW to 5V Pull-up 4.5 - - V VFOL VSC = 1V, VFO Circuit: 10kW to 5V Pull-up - - 0.5 V VSC(Ref) Over-Current Protection Trip Level Voltage of CSC pin VCC = 15V 0.45 0.5 0.55 V UVCCD Supply Circuit Under- Voltage Protection Detection Level 10.5 - 13.0 V UVCCR Reset Level 11.0 - 13.5 V tFOD Fault-out Pulse Width 30 - - ms VIN(ON) ON Threshold Voltage Applied between INX, INY - COM 2.6 - - V VIN(OFF) OFF Threshold Voltage Applied between INX, INY - COM - - 0.8 V RTH Resistance of Thermistor @ TTH = 25°C (Figure 5)(Note 4) - 47 - kW @ TTH = 100°C (Figure 5)(Note 4) - 2.9 - kW
Figure 6. Flatness Measurement Position
- To avoid malfunction, the wiring of each input should be as short as possible. (less than 2~3cm)
- VFO output is open drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1mA.
- Input signal is High-Active type. There is a 5kΩ resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of
- To prevent error of the protection function, the wiring related with RSCF and CSCF should be as short as possible.
- In the over current protection circuit, please select the RSCF , CSCF time constant in the range 1.5~2 μs.
- Each capacitors should be mounted as close to the SPM pins as possible.
- Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.
- Internal NTC thermistor can be used for monitoring of the case temperature and protecting the device from the overheating operation. Select an appropriate resistor RT
according to the application.
- It is recommended that anti-parallel diode(DX ,DY) be connected with each IGBT.
Figure 9. Typical Application Circuit
10 www.fairchildsemi.com FPAM50LH60 Rev. C FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC Detailed Package Outline Drawings Dimension unit: millimeter
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