FPAB30BH60B

FPAB30BH60B FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

• Low thermal resistance due to Al2O3-DBC substrate
• 600V-30A Single phase IGBT PWM converter including a drive IC for gate driving and protection
• Typical switching frequency of 20kHz
• Isolation rating of 2500Vrms/min.

Applications

• Home appliances application like air conditioner Fig. 1.

©2010 Fairchild Semiconductor Corporation FPAB30BH60B Smart Power Module (SPM®) Integrated Power Functions

• PFC converter for single-phase AC/DC power conversion (Please refer to Fig. 3) Integrated Drive, Protection and System Control Functions
• For IGBT: Gate drive circuit, Overcurrent circuit protection (OC), Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to a UV fault and OC fault
• Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input Pin Configuration Fig. 2. Note : For the measurement point of case temperature(TC), please refer to Fig. 2. 12.205 18.345 (1)VCC (2)COM (3)COM (4)COM (5)IN (6)VFO (7)CFOD (8)CSC (9)RTH (10)VTH (11)N.C (12)N.C (13)N (14)N (15)N (16)N (17)NR (18)NR (19)NR (20)NR (21)P (22)P (23)N.C (24)L (25)PR (26)R (27)S DBC Substrate Case Temperature (TC) Detecting Point Top View 12.205 18.345 (1)VCC (2)COM (3)COM (4)COM (5)IN (6)VFO (7)CFOD (8)CSC (9)RTH (10)VTH (11)N.C (12)N.C (13)N (14)N (15)N (16)N (17)NR (18)NR (19)NR (20)NR (21)P (22)P (23)N.C (24)L (25)PR (26)R (27)S DBC Substrate Case Temperature (TC) Detecting Point Top View

©2010 Fairchild Semiconductor Corporation FPAB30BH60B Smart Power Module (SPM®) Pin Descriptions * 11th and 12th pins are cut. Please refer to package outline drawings for more detail. Internal Equivalent Circuit and Input/Output Pins Fig. 3. Package Marking & Ordering Information Pin Number Pin Name Pin Description

1 VCC Common Bias Voltage for IC and IGBT Driving

2,3,4 COM Common Supply Ground

5 IN Signal Input for IGBT

6 VFO Fault Output

7 CFOD Capacitor for Fault Output Duration Time Selection

8 CSC Capacitor (Low-pass Filter) for Over Current Detection

9 R(TH) NTC Thermistor terminal

10 V(TH) NTC Thermistor terminal

11,12 N.C No Connection* 13~16 N IGBT emitter 17~20 NR Negative DC-Link of Rectifier 21,22 P Positive Rail of DC–Link 23 N.C No Connection

24 L Reactor connection pin

25 PR Positive DC–Link of Rectifier

26 R AC input for R-phase

27 S AC input for S-phase

Device Marking Device Package Reel Size Tape Width Quantity FPAB30BH60B FPAB30BH60B SPM27-IC - - 10 CSC CFOD VFO IN COM VCC OUT (21,22) P (24) L (25) PR NTC Thermistor (26) R (27) S (5) IN (2~4) COM (1) VCC (6) VFO (7) CFOD (8) CSC (10) VTH (9) RTH (13~16) N (17~20) NR

©2010 Fairchild Semiconductor Corporation FPAB30BH60B Smart Power Module (SPM®) Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified) Converter Part Control Part Total System Thermal Resistance Item Symbol Condition Rating Unit Supply Voltage Vi Applied between R-S 264 VRMS Supply Voltage (Surge) Vi(Surge) Applied between R-S 500 V Output Voltage VPN Applied between P- N 450 V Output Voltage (Surge) VPN(Surge) Applied between P- N 500 V Collector-emitter Voltage VCES 600 V Each IGBT Collector Current IC TC = 25°C, TJ < 150°C 30 A Each IGBT Collector Current (peak) ICP TC = 25°C, TJ < 150°C Under 1ms pulse width 60 A Collector Dissipation PC TC = 25°C per One IGBT 104 W Repititive Peak Reverse Voltage VRRM 600 V Peak Forward Surge Current IFSM Single half sine-wave 350 A Operating Junction Temperature TJ -40 ~ 150 °C Item Symbol Condition Rating Unit Control Supply Voltage VCC Applied between VCC - COM 20 V Input Signal Voltage VIN Applied between IN - COM -0.3~VCC+0.3 V Fault Output Supply Voltage VFO Applied between VFO - COM -0.3~VCC+0.3 V Fault Output Current IFO Sink Current at VFO Pin 5 mA Current Sensing Input Voltage VSC Applied between CSC - COM -0.3~VCC+0.3 V Item Symbol Condition Rating Unit Storage Temperature TSTG -40 ~ 125 °C Isolation Voltage VISO 60Hz, Sinusoidal, AC 1 minute, Connection Pins to DBC

2500 Vrms

Item Symbol Condition Min. Typ. Max. Unit Junction to Case Thermal Resistance Rq(j-c)Q IGBT - - 1.2 °C/W Rq(j-c)F FRD - - 1.4 °C/W Rq(j-c)R Rectifier - - 1.7 °C/W

©2010 Fairchild Semiconductor Corporation FPAB30BH60B Smart Power Module (SPM®) Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Converter Part Note 1. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Fig. 4

Electrical Characteristics

Fig. 4. Switching Time Definition Control Part Note 2. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F] 3. TTH is the temperature of know case temperature(Tc), please make the experiment considering your application. Item Symbol Condition Min. Typ. Max. Unit IGBT saturation voltage VCE(sat) VCC =15V, VIN = 5V; IC =30A - 2.2 2.8 V FRD forward voltage VFF IF = 30A - 1.9 2.6 V Rectifier forward voltage VFR IF = 30A - 1.2 1.5 V Switching Times tON VPN = 400V, VCC = 15V, IC =30A VIN = 0V « 5V, Inductive Load (Note 1) - 500 - ns tC(ON) - 200 - ns tOFF - 420 - ns tC(OFF) - 100 - ns trr - 60 - ns Irr - 7 - A Collector - emitter Leakage Current ICES VCE = VCES - - 250 mA Item Symbol Condition Min. Typ. Max. Unit Quiescent VCC Supply Cur- rent IQCCL VCC = 15V, IN = 0V VCC - COM - - 26 mA Fault Output Voltage VFOH VSC = 0V, VFO Circuit: 4.7kW to 5V Pull-up 4.5 - - V VFOL VSC = 1V, VFO Circuit: 4.7kW to 5V Pull-up - - 0.8 V Over Current Trip Level VSC(ref) VCC = 15V 0.45 0.5 0.55 V Supply Circuit Under- Voltage Protection UVCCD Detection Level 10.7 11.9 13.0 V UVCCR Reset Level 11.2 12.4 13.2 V Fault-out Pulse Width tFOD CFOD = 33nF (Note 2) 1.4 1.8 2.0 ms ON Threshold Voltage VIN(ON) Applied between IN - COM 2.8 - - V OFF Threshold Voltage VIN(OFF) - - 0.8 V Resistance of Thermistor RTH @ TTH = 25°C (Note3, Fig. 9) - 47.0 - kW @ TTH = 100°C (Note3, Fig. 9) - 2.9 - kW tON tC(ON) trr Irr 10% of IC 100% of IC 90% of IC 120% of IC 15% of VCE (a) Turn-on tOFF tC(OFF) (b) Turn-off IC VCE VCE IC VIN VIN 15% of VCE 10% of IC

©2010 Fairchild Semiconductor Corporation FPAB30BH60B Smart Power Module (SPM®) Recommended Operating Condition Mechanical Characteristics and Ratings Fig. 5. Flatness Measurement Position Item Symbol Condition Min. Typ. Max. Unit Input Supply Voltage Vi Applied between R-S 187 220 253 V Output Voltage VPN Applied between P-N 380 400 V Control Supply Voltage VCC Applied between VCC(L)- COM 13.5 15 16.5 V Control supply variation dVCC/dt -1 - 1 V/ms PWM Input Frequency fPWM TJ £ 150°C per IGBT 20 kHz Allowable Input Current (Peak) Ii TC < 90°C, Vi=220V, VPN=380V VPWM=20KHz 30 A Item Condition Limits UnitsMin. Typ. Max. Mounting Torque Mounting Screw: - M3 Recommended 0.62N•m 0.51 0.62 0.72 N•m Device Flatness Note Fig. 5 0 - +120 mm Weight - 15.00 - g (+) (+) (+)

©2010 Fairchild Semiconductor Corporation FPAB30BH60B Smart Power Module (SPM®) Time Charts of SPMs Protective Function P1 : Normal operation - IGBT ON and conducting current P2 : Under voltage detection P3 : IGBT gate interrupt P4 : Fault signal generation P5 : Under voltage reset P6 : Normal operation - IGBT ON and conducting current Fig. 6. Under-Voltage Protection P1 : Normal operation - IGBT ON and conducting current P2 : Over current detection P3 : IGBT gate interrupt / Fault signal generation P4 : IGBT is slowly turned off P5 : IGBT OFF signal P6 : IGBT ON signal - but IGBT cannot be turned on during the fault Output activation P7 : IGBT OFF state P8 : Fault Output reset and normal operation start Fig. 7. Over Current Protection In te rn a l IG B T G a te -E m itte r V o lta g e In p u t S ig n a l O u tp u t C u rre n t F a u lt O u tp u t S ig n a l C o n tro l S u p p ly V o lta g e P 1 P 2 P 3 P 4 P 6 P 5 U V d e te c t U V re se t In te rn a l IG B T G a te -E m itte r V o lta g e In p u t S ig n a l O u tp u t C u rre n t S e n s in g V o lta g e F a u lt O u tp u t S ig n a l P 1 P 2 P 3 P 4 P 6 P 5 P 7 P 8 O C R e fe re n c e V o lta g e (0 .5 V ) R C F ilte r D e la y O C D e te c tio n

©2010 Fairchild Semiconductor Corporation FPAB30BH60B Smart Power Module (SPM®) Fig. 8. Application Example Fig. 9. R-T Curve of the Built-in Thermistor 0 25 50 75 100 125 100 150 200 MIN TYP MAX R-T Curve Resistance RTH[kW] Temperature TTH[ ]℃ 95 100 105 110 115 120 125 MIN TYP MAX Resistance RTH[kW] Temperature TTH[ ]℃

©2010 Fairchild Semiconductor Corporation FPAB30BH60B Smart Power Module (SPM®) Detailed Package Outline Drawings

©2010 Fairchild Semiconductor Corporation FPAB30BH60B Smart Power Module (SPM®) Detailed Package Outline Drawings

©2010 Fairchild Semiconductor Corporation FPAB30BH60B Smart Power Module (SPM®) Detailed Package Outline Drawings

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AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax™ ESBC™ Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ FRFET® Global Power Resource SM Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ OptoHiT™ OPTOLOGIC OPTOPLANAR® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ The Power Franchise® TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I49