FP812 SANKEN | Alldatasheet
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0 –1 –2 –3 –4 IC (A) VCE (V) 500 100 hFE IC (A) (VCE = –4V) 0.01 0.05 0.1 1 0.5 5 10 fT (MHz) IE (A) 0.0002 0.010.001 0.1 1 10 100 0.1 0.5 0.05 j-a (ºC/W) t (sec) (VCE = 12V) 0 50 100 150 PC (W) Ta (ºC) –12 –10 –0.1 –0.5 IC (A) VCE (V) 0 –0.5 –1.0 –1.5 IC (A) VBE (V) VCE (sat) (A) IB (mA) IB = –10mA –25mA –50mA natural air cooling Silicone grease Aluminum heatsink Unit: mm 100•100•2 200 •200•2 Without heatsink With infinite heatsink Tc = –40ºC 25ºC 75ºC 125ºC Ic = –1A Ic = –3A Ic = –5A 1msec 10msec 100 msecD.C (Tc = 25ºC) Typ –75mA –100mA –150mA–200mA–300mA Tc = 25ºC Single Pulese NO Fin (Ta = 2 5 º C (VBE = –4V) natural air cooling Without heatsink Symbol Ratings Unit (Ta=25ºC) (Ta=25ºC) VCBO –120 Symbol Test Conditions Ratings Unit ICBO VCC (V) RL (Ω ) IC (A) –10 VBB1 (V) VBB2 (V) –30 IB1 (mA) IB2 (mA) 2.5 ton (µs) 0.4 tstg (µs) 0.6 tf (µs) µAVCB = –120V 10max IEBO µAVEB = –6V 10max VCEO VIC = –50mA –120min hFE VCE = –4V, IC = –3A 70min VCE (sat) VIC = –3A, IB = –0.3A –0.3max VCEO V V –120 VEBO V–6 IC A–8 (pulse –12) IB A–3 PC W35 (Tc=25ºC) Tj ºC150 Tstg ºC–55 to +150 Absolute Maximum Ratings Electrical Characteristics Typical Switching Characteristics n IC — V CE Characteristics (typ.) n PC — Ta Derating n IC — V BE Temperature Characteristics (typ.) n hFE — I C Characteristics (typ.) n hFE — I C Temperature Characteristics (typ.) n fT — I E Characteristics (typ.) n j-a — t Characteristics n Safe Operating Area (single pulse) n VCE (sat) — I B Characteristics (typ.) Power Transistor FP812 Typ 500 100 hFE IC (A) (VCE = –4V) Tc = 125ºC 75ºC 25ºC –55ºC a) Type No. b) Lot No. (Unit: mm) External Dimensions FM20 (full-mold) BCE C0.5 16.9(13.5) 8.4 0.83.9 4 10.0 2.2 2.6 4.2 2.8 1.35 1.35 0.85 2.54 2.54 0.45 3.3 a b