FP7G100US60 FAIRCHILD | Alldatasheet

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Technical content

Features

  • Short Circuit rated 10us @Tc=100 °C, Vge=15V
  • High Speed Switching
  • Low Saturation Voltage : Vce(sat) =2.2V @Ic=100A
  • High Input Impedance
  • Fast & Soft Anti-Parallel FWD Application
  • W e l d e r s
  • AC & DC Motor Controls
  • General Purpose Inverters
  • Robotics
  • Servo Controls
  • U P S Absolute Maximum Ratings Symbol Description Rating Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ TC = 25°C 100 A ICM (1) Pulsed Collector Current 200 A IF Diode Continuous Forward Current @ TC = 100°C 100 A IFM Diode Maximum Forward Current 200 A TSC Short Circuit Withstand Time @ TC = 100°C 10 us PD Maximum Power Dissipation @ TC = 25°C 400 W TJ Operating Junction Temperature -40 to +125 °C Tstg Storage Temperature Range -40 to +125 °C Viso Isolation Voltage @ AC 1minute 2500 V Mounting Torque Power Terminals Screw : M5 2.0 N.m Mounting Screw : M5 2.0 N.m Internal Circuit Diagram 45 6 7 45 6 7 45 6 7

2 www.fairchildsemi.comFP7G100US60 Rev. A FP7G100US60 Transfer Molded Type IGBT Module Pin Configuration and Pin Description Top View Internal Circuit Diagram Pin Description Pin Number Pin Description

1 Emitter of Q1, IGBT,

Collector of Q2, IGBT

2 Emitter of Q2, IGBT

3 Collector of Q1, IGBT

4 Gate of Q1, IGBT

5 Emitter of Q1, IGBT

6 Gate of Q2, IGBT

7 Emitter of Q2, IGBT

3 www.fairchildsemi.comFP7G100US60 Rev. A FP7G100US60 Transfer Molded Type IGBT Module Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE= 0V, IC = 250µA 600 - - V ∆BVCES/ ∆TJ Temperature Coeff. of Breakdown Voltage VGE= 0V, IC = 1mA - 0.6 - V ICES Collector Cut-off Current VCE= VCES, VGE= 0V - - 250 uA IGES Gate-Emitter Leakage Current VGE= VGES, VCE= 0V - - ± 100 nA On Characteristics VGE(th) G-E Threshold Voltage VGE = 0V, IC=100mA 5.0 6.0 8.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 100A, VGE = 15V - 2.2 2.8 V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz 6085 pF Coes Output Capacitance 725 pF Cres Reverse Capacitance 135 pF Switching Characteristics td(on) Turn-On Delay Time VCC = 300 V, IC = 100A, RG = 2.4Ω, VGE = 15V Inductive Load, TC = 25°C - 34 - ns tr Rise Time - 24 - ns td(off) Turn-Off Delay Time - 98 - ns tf Fall Time - 45 - ns Eon Turn-On Switching Loss - 0.54 - mJ Eoff Turn-Off Switching Loss - 1.26 - mJ Ets Total Switching Loss - 1.8 - mJ td(on) Turn-On Delay Time VCC = 300 V, IC = 100A, RG = 2.4Ω, VGE = 15V Inductive Load, TC = 125°C - 33 - ns tr Rise Time - 28 - ns td(off) Turn-Off Delay Time - 101 - ns tf Fall Time - 171 - ns Eon Turn-On Switching Loss - 1.12 - mJ Eoff Turn-Off Switching Loss - 3.18 - mJ Ets Total Switching Loss - 4.3 - mJ Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V @ TC = 100°C 10 - - us Qg Total Gate Charge VCE = 300 V, IC = 100A, VGE = 15V - 283 - nC Qge Gate-Emitter Charge - 50 - nC Qgc Gate-Collector Charge - 155 - nC

4 www.fairchildsemi.comFP7G100US60 Rev. A FP7G100US60 Transfer Molded Type IGBT Module Electrical Characteristics of DIODE (TJ = 25°C, Unless Otherwise Specified) Thermal Characteristics Symbol Parameter Conditions Min Typ Max Units VFM Diode Forward Voltage IF = 100A V TC = 100°C - 1.8 - trr Diode Reverse Recovery Time IF = 100A di / dt = 200 A/us TC = 25°C - 85 125 ns TC = 100°C - 150 - Irr Diode Peak Reverse Recovery Current TC = 25°C - 8 11 A TC = 100°C - 13 - Qrr Diode Reverse Recovery Charge TC = 25°C - 325 635 nC TC = 100°C - 965 - Symbol Parameter Typ. Max. Units RθJC Junction-to-Case (IGBT Part, per 1/2 Module) - 0.25 °C/W RθJC Junction-to-Case (DIODE Part, per 1/2 Module) - 0.7 °C/W RθCS Case-to-Sink (Conductive grease applied) 0.05 - °C/W Weight Weight of Module - 90 g

5 www.fairchildsemi.comFP7G100US60 Rev. A FP7G100US60 Transfer Molded Type IGBT Module Typical Performance Characteristics 02468 120 160 200 240 20V 12V 15V VGE = 10V Common Emitter TC = 25o C IC, Collector Current[A] VCE, Collector-Emitter Voltage[V] 0.3 1 10 20 100 150 200 250 Common Emitter VGE = 15V TC = 25o C TC = 125o C IC, Collector Current[A] VCE, Collector-Emitter Voltage[V] 0 50 100 150 200A 100A IC = 50A Common Emitter VGE = 15V VCE, Collector-Emitter Voltage[V] TC, Case Temperature[ o C] 100 120 0.1 1 10 100 1000 Duty cycle : 50% TC = 100o C Power Dissipation = 130W VCC = 300V Load Current : peak of square wave Frequency [Khz] Load Current [A] 048 1 2 1 6 2 0 Common Emitter TC = 25o C 200A 100A IC = 50A VCE, Collector-Emitter Voltage[V] VGE, Gate-Emitter Voltage[V] 0 4 8 1 21 62 0 Common Emitter TC = 25o C 200A 100A IC = 50A VCE, Collector-Emitter Voltage[V] VGE, Gate-Emitter Voltage[V] Fig 1. Typical Output Characteristics Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE Fig 2. Typical Saturation Voltage Characteristics

6 www.fairchildsemi.comFP7G100US60 Rev. A FP7G100US60 Transfer Molded Type IGBT Module 0.5 1 10 30 4000 8000 12000 Cres Coes Cies Common Emitter VGE = 0V, f = 1MHz TC = 25o C Capacitance[pF] VCE, Collector-Emitter Voltage[V] 11 0 100

1000 Common Emitter

VCC = 300V, VGE = +/- 15V IC = 100A TC = 25oC TC = 125oC Ton Tr Switching Time[ns] RG, Gate Resistance[Ω] 61 0 1 0 0 100 1000 3000 Tf Tf Toff Common Emitter VCC = 300V, VGE = +/- 15V IC = 100A TC = 25oC TC = 125oC Switching Time[ns] RG, Gate Resistance[Ω] 11 0 0.1 100 Common Emitter VCC = 300V, VGE = +/- 15V IC = 100A TC = 25oC TC = 125oC Eon Eoff Switching Loss[mJ] RG, Gate Resistance[Ω] 20 40 60 80 100 120 140 100 1000 Tr Ton Common Emitter VCC = 300V, VGE = +/- 15V IC = 100A TC = 25oC TC = 125oC Switching Time[ns] IC, Collector Current[A] 20 40 60 80 100 120 140 100 1000 Tf Common Emitter VCC = 300V, VGE = +/- 15V IC = 100A TC = 25oC TC = 125oC Toff Tf Switching Time[ns] IC, Collector Current[A] Fig 7. Capacitance Characteristics Fi g 8. Turn-On Characteristics vs. Gate Resistance Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance Fig 11. Turn-On Characteristics vs. Collector Current Fig 12. Turn-Off Characteristics vs. Collector Current

7 www.fairchildsemi.comFP7G100US60 Rev. A FP7G100US60 Transfer Molded Type IGBT Module 20 40 60 80 100 120 140 0.1 100 Eoff Eon Common Emitter VCC = 300V, VGE = +/- 15V IC = 100A TC = 25oC TC = 125oC Switching Loss[mJ] IC, Collector Current[A] 0 100 200 300 400 200 V VCC = 100 V 300 V Common Emitter RL = 3 Ω TC = 25oC VGE, Gate-Emitter Voltage[V] Qg, Gate Charge[nC] 1 10 100 1000 100 Safe Operating Area VGE = 20V, TC = 100o C IC, Collector Current[A] VCE, Collector-Emitter Voltage[V] 0.3 1 10 100 10000.1 100 500 Single Nonrepetitive Pulse TC = 25o C Curves must be derated linerarly with increase in temperature 50us 100us 1ms DC Operation IC MAX. (Continuous) IC MAX. (Pulsed) IC, Collector Current[A] VCE, Collector-Emitter Voltage[V] 1E-3 0.01 0.1 TC = 25o C IGBT : DIODE : Thermal Response, Zthjc[o C/W] Rectangular Pulse Duration[sec] 0 100 200 300 400 500 600 7000.1 100 600 Single Nonrepetitive Pulse TJ = 125 o C VGE = 15V RG = 2.4 Ω IC, Collector Current[A] VCE, Collector-Emitter Voltage[V] Fig 14. Gate Charge CharacteristicsFig 13. Switching Loss vs. Collector Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Fig 17. RBSOA Characteristics Fig 18. Transient Thermal Impedance

8 www.fairchildsemi.comFP7G100US60 Rev. A FP7G100US60 Transfer Molded Type IGBT Module 01234 100 150 200 250 300 Common Cathode VGE = 0V TC = 25o C TC = 125o C IF, Forward Current[A] VF, Forward Voltage[V] 0 2 04 06 08 0 1 0 0 Irr Trr Trr Common Cathode di/dt = 200A/us TC = 25o C TC = 100o C Irr Irr, Peak Reverse Recovery Current[A] Trr, Reverse Recovery Time[x10ns] IF, Forward Current[A] Fig 20. Reverse Recovery CharacteristicsFig 19. Forward Characteristics

9 www.fairchildsemi.comFP7G100US60 Rev. A FP7G100US60 Transfer Molded Type IGBT Module Detailed Package Outline Drawings 123 14.50+0.50 -0.80 25.00±0.20 93.00±0.50 80.00±0.30 35.00±0.50 (10.00) (6.50) (10.00) 10.00±0.10 10.00±0.50 17.50±0.30 12.20±0.30 18.40±0.50 (5°) (14°) (14°) 0.80+0.10 -0.05 9.60±0.10 (R2.75) 38.80±1.00 1.00±0.10 (R1.00) (90°) (5°) (7°) 12.20±0.30 10.40±0.30 (R1.65)

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