FP75R12KT3

FP75R12KT3 EUPEC | Alldatasheet

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Technische□Information□/□technical□information FP75R12KT3 IGBT-Module IGBT-modules Vorläufige□Daten preliminary□data IGBT-Wechselrichter□/□IGBT-inverter Höchstzulässige□Werte□/□maximum□rated□values %-( %-()*+ 2-345 7(0# 8%-( *+ 2-9: 0) %-()*+ 6=4= )) > Charakteristische□Werte□/□characteristic□values # 2-( 8,?.(0),8%&'()*+ 2-( 8,?.(0),8%&'(0)*+ ,-.DE= 08 08F 80) , $ 2-(8# H8) , $$ ,?.( 0),@0), I? 8 %&'()*+ ?K3= 0 L P Q!<! P #!$ U V W W 2-( 8,-.(H, ,?.(X0),8?43(S8 L8%&'()*+ ,?.(X0),8?43(S8 L8%&'(0)*+ Y43 J J U W W 2-( 8,-.(H, ,?.(X0),8?43(S8 L8%&'()*+ ,?.(X0),8?43(S8 L8%&'(0)*+ R 8 J J U V W W 2-( 8,-.(H, ,?.(X0),8?4ZZ(S8 L8%&'()*+ ,?.(X0),8?4ZZ(S8 L8%&'(0)*+ Y4ZZ 8S J J PU W W 2-( 8,-.(H, ,?.(X0),8?4ZZ(S8 L8%&'()*+ ,?.(X0),8?4ZZ(S8 L8%&'(0)*+ Z 8 J J 2-( 8,-.(H,8V/(S) N ,?.(X0),8?43(S8 L8%&'()*+ ,?.(X0),8?43(S8 L8%&'(0)*+ "43 H8)) F8S 2-( 8,-.(H,8V/(S) N ,?.(X0),8?4ZZ(S8 L8%&'()*+ ,?.(X0),8?4ZZ(S8 L8%&'(0)*+ "4ZZ H8 7]0J 8,?.]0), VD-._A 2/- >C#< 2;a% 2;a% =Gb- 8) A>

Technische□Information□/□technical□information FP75R12KT3 IGBT-Module IGBT-modules Vorläufige□Daten preliminary□data Diode-Wechselrichter□/□diode-inverter Höchstzulässige□Werte□/□maximum□rated□values $ %&'()*+ ,99: 0 , 1+< 7(0# 2c9: 0) ,9(,87(0# 8%&'(0)*+ 2d 0 d Charakteristische□Werte□/□characteristic□values # 2c( 8,?.(,8%&'()*+ 2c( 8,?.(,8%&'(0)*+ ,c 08H) 08H) 80) , 2c( cA( AJ ,9(H,8,?.( 0),8%&'()*+ ,9(H,8,?.( 0),8%&'(0)*+ 29: 2c( cA( AJ ,9(H,8,?.( 0),8%&'()*+ ,9(H,8,?.( 0),8%&'(0)*+ IR F8 0H8) 2c( cA( AJ ,9(H,8,?.( 0),8%&'()*+ ,9(H,8,?.( 0),8%&'(0)*+ "ROe 8 H8) >C#< =Gb- 8) Diode-Gleichrichter□/□diode-rectifier Höchstzulässige□Werte□/□maximum□rated□values Q!< !<1 M #B## %-( *+ 2c9:/: 00) #B##M %-( *+ 29:/: f(0# 8%&'()*+ f(0# 8%&'(0)*+ 2c/: ) S f(0# 8%&'()*+ f(0# 8%&'(0)*+ 2d 0) d d Charakteristische□Werte□/□characteristic□values # <$ %&'(0)*+82c( ,c 080 , >C#< =Gb- 8H) A>

Technische□Information□/□technical□information FP75R12KT3 IGBT-Module IGBT-modules Vorläufige□Daten preliminary□data IGBT-Brems-Chopper□/□IGBT-brake-chopper Höchstzulässige□Werte□/□maximum□rated□values %e( %e()*+ 2-345 S 7(0# 8%-( *+ 2-9: %-()*+ 6=4= 0 > Charakteristische□Werte□/□characteristic□values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a% 2;a% =Gb- 8H A>

Technische□Information□/□technical□information FP75R12KT3 IGBT-Module IGBT-modules Vorläufige□Daten preliminary□data Diode-Brems-Chopper□□/□Diode-brake-chopper Höchstzulässige□Werte□/□maximum□rated□values $ %&'()*+ ,99: 0 , 1+< 2c ) f(0# 2c9: ) ,9(,8f(0# 8%&'(0)*+ 2d 0 d Charakteristische□Werte□/□characteristic□values # 2c() 8,?.(,8%&'()*+ 2c() 08H) 8 , 2c() cA( AJ ,9(H,8,?.( 0),8%&'()*+ ,9(H,8,?.( 0),8%&'(0)*+ 29: H8 2c() cA( AJ ,9(H,8,?.( 0),8%&'()*+ ,9(H,8,?.( 0),8%&'(0)*+ IR 8 2c() cA( AJ ,9(H,8,?.( 0),8%&'()*+ ,9(H,8,?.( 0),8%&'(0)*+ "ROe 8F >C#< =Gb- 08 A> NTC-Widerstand□/□NTC-thermistor Charakteristische□Werte□/□characteristic□values # g %-()*+ hi )8 !L jkk jkk %-(0*+8jkk(SFL lA ) )m %-()*+ 6hi 8 #> a a h(hiBnahioikU0A%h 0AUF 80) WWp ahioik

Technische□Information□/□technical□information FP75R12KT3 IGBT-Module IGBT-modules Vorläufige□Daten preliminary□data Modul□/□module $ M 8()N8(0# ,q/rs 8) !, MM$ MQ ht Q!TA# !A# 08 ## V Q!TA# !A# 8) ## B +%2 u) >C#< MA# w7ED=O(0>AU#_ WAwxROEDO(0>AU#_ W =G-y 8F A> M # VD-. H N M Q %-()*+8 A < --z{..z ||z{--z 8 #L NT C #B##\` # %&'5E^ 0) *+ %## %&'4f S 0) *+ V$# $# %D=x S 0) *+ A <M) M 8 H8 g# <$ ; $ Mit□dieser□technischen□Information□werden□Halbleiterbauelemente□spezifiziert,□jedoch□keine Eigenschaften□zugesichert.□Sie□gilt□in□Verbindung□mit□den□zugehörigen□technischen□Erläuterungen. This□technical□information□specifies□semiconductor□devices□but□guarantees□no□characteristics. It□is□valid□with□the□appropriate□technical□explanations.

Technische□Information□/□technical□information FP75R12KT3 IGBT-Module IGBT-modules Vorläufige□Daten preliminary□data 2;a% U W 2;a% U W 2;a% U W 2;a% U W 2;a% UW 2;a% UW 2;a% UW 2;a% UW ,-.n,p 2-n p 150 135 120 105 %&'()*+ %&'(0)*+ 2;a% U W 2;a% U W 2;a% U W 2;a% U W 2;a% UW 2;a% UW 2;a% UW 2;a% UW ,-.n,p 2-n p 150 135 120 105 ,?.(0F, ,?.(0 ,?.(0), ,?.(0, ,?.(00, ,?.(F, !2;a% U W v$ !2;a% U W v$ !2;a% U W v$ !2;a% U W 2;a% UW 2;a% UW 2;a% UW 2;a% UW ,?.n,p 2-n p 5 6 7 8 9 10 11 12 150 135 120 105 %&'()*+ %&'(0)*+ 2;a% U W 2;a% U W 2;a% U W 2;a% U W 2;a% UW 2;a% UW 2;a% UW 2;a% UW "43(U2-W8"4ZZ(U2-W "43(U2-W8"4ZZ(U2-W "43(U2-W8"4ZZ(U2-W "43(U2-W8"4ZZ(U2-W ,?.(X0),8?43(S8 L8?4ZZ(S8 L8?4ZZ(S8 L8?4ZZ(S8 L8?4ZZ(S8 L8,-.(H,8 2-n p "n#[p 0 15 30 45 60 75 90 105 120 135 150 "43 "4ZZ

Technische□Information□/□technical□information FP75R12KT3 IGBT-Module IGBT-modules Vorläufige□Daten preliminary□data 2;a% U W 2;a% U W 2;a% U W 2;a% U W 2;a% UW 2;a% UW 2;a% UW 2;a% UW ,?.(X0),82-( 8,-.(H,8%&'(0)*+ ?nLp "n#[p 0 5 10 15 20 25 30 35 40 45 50 "43 "4ZZ >C#< 2;a% >C#< 2;a% >C#< 2;a% >C#< 2;a% 2;a% 2;a% 2;a% 2;a% ~=Gb-(UW ~=Gb-(UW ~=Gb-(UW ~=Gb-(UW n p ~=Gb-n A>p 0,001 0,01 0,1 1 10 0,01 0,1 ~=Gb- 2;a% Kn A>p Kn p 8FSF 8S) 80) S 800 S 8H0F Q!<C 2;a% >Ua W Q!<C 2;a% >Ua W Q!<C 2;a% >Ua W Q!<C 2;a% >Ua W $2;a% Ua W $2;a% Ua W $2;a% Ua W $2;a% Ua W ,?.(X0),8?4ZZ(S8 L8%&'(0)*+ ,-.n,p 2-n p 0 200 400 600 800 1000 1200 1400 160 140 120 100 2-8M 2-8+ 1\\! U W 1\\! U W 1\\! U W 1\\! U W UW < UW < UW < UW 2c(U,cW 2c(U,cW 2c(U,cW 2c(U,cW ,cn,p 2cn p 150 135 120 105 %&'()*+ %&'(0)*+

Technische□Information□/□technical□information FP75R12KT3 IGBT-Module IGBT-modules Vorläufige□Daten preliminary□data U W U W U W U W UW UW UW UW "ROe(U2cW "ROe(U2cW "ROe(U2cW "ROe(U2cW ?43(S8 L8,-.(H,8%&'(0)*+ 2cn p "n#[p 0 15 30 45 60 75 90 105 120 135 150 "ROe U W U W U W U W UW UW UW UW 2c( 8,-.(H,8%&'(0)*+ ?nLp "n#[p 0 5 10 15 20 25 30 35 40 45 50 "ROe >C#< >C#< >C#< >C#< ~=Gb-(UW ~=Gb-(UW ~=Gb-(UW ~=Gb-(UW n p ~=Gb-n A>p 0,001 0,01 0,1 1 10 0,01 0,1 ~=Gb- 1 Kn A>p Kn p 8)FH0S 80F 80FS S SHS HH) 1\\! W 1\\! W 1\\! W 1\\! W UW < UW < UW < UW 2c(U,cW 2c(U,cW 2c(U,cW 2c(U,cW ,cn,p 2cn p 150 135 120 105 %&'()*+ %&'(0)*+

Technische□Information□/□technical□information FP75R12KT3 IGBT-Module IGBT-modules Vorläufige□Daten preliminary□data 2;a% W 2;a% W 2;a% W 2;a% W 2;a% UW 2;a% UW 2;a% UW 2;a% UW ,-.n,p 2-n p %&'()*+ %&'(0)*+ 1\\! W 1\\! W 1\\! W 1\\! W UW< UW< UW< UW 2c(U,cW 2c(U,cW 2c(U,cW 2c(U,cW ,cn,p 2cn p %&'()*+ %&'(0)*+ g%+ %#! U W g%+ %#! U W g%+ %#! U W g%+ %#! U W g%+ UW g%+ UW g%+ UW g%+ UW (U%W (U%W (U%W (U%W %-n*+p nLp 0 20 40 60 80 100 120 140 160 100 1000 10000 100000 =€f

Technische□Information□/□technical□information FP75R12KT3 IGBT-Module IGBT-modules Vorläufige□Daten preliminary□data Schaltplan□/□circuit□diagram Gehäuseabmessungen□/□package□outlines

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