FP6909G GWSEMI | Alldatasheet

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Technical content

Features

 VDS=-60V, ID=-12A  RDS(ON)=85mΩ@VGS=-10V(Typ.)  RDS(ON)=120mΩ@VGS=-4.5V(Typ.)  High Power and current handing capability  Lead free product is acquired  Surface Mount Package G Schematic diagram Main Applications  Battery Protection  Load Switch  Power Management TO-252 Top View P-Channel Enhancement MOSFET FP6909G

Electrical Characteristics (T Ambient =25º C unless noted otherwise) Symbol Parameters Conditions Min. Typ. Max. Unit Off Characteristics BV DSS Drain Source Breakdown Voltage V GS =0 V, I D =250μA Volt I DSS Zero Gate Voltage Drain Current V DS 0V, V GS =0V μ A I GSS Gate Body Leakage Current V GS V, V DS =0V 100 nA On Characteristics V GS(th) Gate Threshold Voltage VDS= VGS, ID=-250μA 1.0 Volt R DS(ON) Drain Source On State Resistance VGS=-10V, ID=-6A mΩ VGS=-4.5V, ID=-3A mΩ Dynamic Characteristics C iss Input Capacitance VDD=-30V, VGS=0V , F=1MHz pF C os s Output Capacitance pF C rss Reverse Transfer Capacitance pF Switching Characteristics td(on) Turn on Delay Time V DD V, I D A V G EN V, R GEN Ω nS tr Turn on Rise Time nS td(off) Turn Off Delay Time nS tf Turn Off Fall Time nS Q g Total Gate Charge V D S V, I D A V GS V nC Q gs Gate Source Charge nC Q gd Gate Drain Charge nC Drain Source Diode Characteristics V SD Diode Forward Voltage (Note 3) V GS =0V, I S 2.0A V I S D iode Forward Current (Note 2) A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Limited by TJmax, not recommended for using above this value 3. Pulse width ≤300μs, duty circle≤2% P-Channel Enhancement MOSFET FP6909G

Typical Electrical Characteristics P-Channel Enhancement MOSFET FP6909G

A 2.20 2.40 0.087 0.094 b 0.50 0.70 0.020 0.028 b1 0.70 0.90 0.028 0.038 c 0.40 0.60 0.017 0.023 c1 0.40 0.60 0.017 0.023 D 6.35 6.65 0.250 0.262 D1 5.20 5.40 0.205 0.213 E 9.50 9.90 0.374 0.390 E1 5.40 5.70 0.213 0.224 E2 1.35 1.65 0.053 0.065 e 2.300 TYP. 0.091 TYP. e1 4.50 4.70 0.177 0.185 L 2.55 2.90 0.100 0.114 L1 1.40 1.78 0.055 0.070 L2 0.60 0.90 0.024 0.035 P-Channel Enhancement MOSFET FP6909G TO-252 PACKAGE OUTLINE D A e L c E b