FP50R12N2T7P INFINEON | Alldatasheet
Document overview
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- PDF pages: 20
Technical content
Features
- Electrical features - V CES = 1200 V - I C nom = 50 A / ICRM = 100 A - TRENCHSTOP TM IGBT7 - Low V CE,sat - Overload operation up to 175°C
- Mechanical features - High power and thermal cycling capability - Integrated NTC temperature sensor - Copper base plate - Al 2O3 substrate with low thermal resistance - Pre-applied thermal interface material - Solder contact technology Potential applications
- Auxiliary inverters
- Motor drives
- Servo drives Product validation
- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
J FP50R12N2T7P EconoPIM™2 module Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 www.infineon.com 2022-02-01
EconoPIM™2 module Table of contents Datasheet 2 Revision 1.00 2022-02-01
1 Package
Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min 2.5 kV Material of module baseplate Cu Internal isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 10.0 mm Clearance dClear terminal to heatsink 7.5 mm Comparative tracking index CTI >200 Relative thermal index (electrical) RTI housing 140 °C Table 2 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Stray inductance module LsCE 35 nH Module lead resistance, terminals - chip RAA'+CC' TH=25°C, per switch 5.5 mΩ Module lead resistance, terminals - chip RCC'+EE' TH=25°C, per switch 4.8 mΩ Storage temperature Tstg -40 125 °C Maximum baseplate operation temperature TBPmax 150 °C Mounting torque for module mounting M - Mounting according to valid application note M5, Screw 3 6 Nm Weight G 180 g Note: The current under continuous operation is limited to 50 A rms per connector pin. Storage and shipment of modules with TIM => see AN2012-07
2 IGBT , Inverter
Table 3 Maximum rated values Parameter Symbol Note or test condition Values Unit Collector-emitter voltage VCES Tvj = 25 °C 1200 V Continuous DC collector current ICDC Tvj max = 175 °C TH = 90 °C 50 A (table continues...) FP50R12N2T7P EconoPIM™2 module Datasheet 3 Revision 1.00 2022-02-01
Table 3 (continued) Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak collector current ICRM tP = 1 ms 100 A Gate-emitter peak voltage VGES ±20 V Table 4 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Collector-emitter saturation voltage VCE sat IC = 50 A, VGE = 15 V Tvj = 25 °C 1.50 1.80 V Tvj = 125 °C 1.64 Tvj = 175 °C 1.72 Gate threshold voltage VGEth IC = 2 mA, VCE = VGE, Tvj = 25 °C 5.15 5.80 6.45 V Gate charge QG VGE = ±15 V, VCE = 600 V 0.92 µC Internal gate resistor RGint Tvj = 25 °C 0 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 11.1 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.039 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 25 °C 0.01 mA Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C 100 nA Turn-on delay time (inductive load) tdon IC = 50 A, VCE = 600 V, VGE = ±15 V, RGon = 7.5 Ω Tvj = 25 °C 0.059 µs Tvj = 125 °C 0.061 Tvj = 175 °C 0.062 Rise time (inductive load) tr IC = 50 A, VCE = 600 V, VGE = ±15 V, RGon = 7.5 Ω Tvj = 25 °C 0.043 µs Tvj = 125 °C 0.047 Tvj = 175 °C 0.049 Turn-off delay time (inductive load) tdoff IC = 50 A, VCE = 600 V, VGE = ±15 V, RGoff = 7.5 Ω Tvj = 25 °C 0.290 µs Tvj = 125 °C 0.380 Tvj = 175 °C 0.420 Fall time (inductive load) tf IC = 50 A, VCE = 600 V, VGE = ±15 V, RGoff = 7.5 Ω Tvj = 25 °C 0.110 µs Tvj = 125 °C 0.200 Tvj = 175 °C 0.270 Turn-on energy loss per pulse Eon IC = 50 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 7.5 Ω, di/dt = 900 A/µs (Tvj = 175 °C) Tvj = 25 °C 5.07 mJ Tvj = 125 °C 6.76 Tvj = 175 °C 7.72 (table continues...) FP50R12N2T7P EconoPIM™2 module Datasheet 4 Revision 1.00 2022-02-01
Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Turn-off energy loss per pulse Eoff IC = 50 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 7.5 Ω, dv/dt =
2900 V/µs (Tvj = 175 °C)
Tvj = 25 °C 3.37 mJ Tvj = 125 °C 5.31 Tvj = 175 °C 6.58 SC data ISC VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj=150 °C 190 A tP ≤ 7 µs, Tvj=175 °C 180 Thermal resistance, junction to heat sink RthJH per IGBT , Valid with IFX pre-applied Thermal Interface Material
0.777 K/W
Tvj op -40 175 °C Note: T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
3 Diode, Inverter
Table 5 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V Continuous DC forward current IF 50 A Repetitive peak forward current IFRM tP = 1 ms 100 A I2t - value I2t VR = 0 V, tP = 10 ms Tvj = 125 °C 465 A²s Tvj = 175 °C 420 Table 6 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 50 A, VGE = 0 V Tvj = 25 °C 1.72 2.10 V Tvj = 125 °C 1.59 Tvj = 175 °C 1.52 (table continues...) FP50R12N2T7P EconoPIM™2 module Datasheet 5 Revision 1.00 2022-02-01
Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Peak reverse recovery current IRM IF = 35 A, VR = 600 V, VGE = -15 V, -diF/dt = 900 A/µs (Tvj = 175 °C) Tvj = 25 °C 31 A Tvj = 125 °C 39 Tvj = 175 °C 45 Recovered charge Qr IF = 50 A, VR = 600 V, VGE = -15 V, -diF/dt = 900 A/µs (Tvj = 175 °C) Tvj = 25 °C 3.96 µC Tvj = 125 °C 7.37 Tvj = 175 °C 9.89 Reverse recovery energy Erec IF = 50 A, VR = 600 V, VGE = -15 V, -diF/dt = 900 A/µs (Tvj = 175 °C) Tvj = 25 °C 1.31 mJ Tvj = 125 °C 2.52 Tvj = 175 °C 3.46 Thermal resistance, junction to heat sink RthJH per diode, Valid with IFX pre-applied Thermal Interface Material
1.13 K/W
Tvj op -40 175 °C Note: T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
4 Diode, Rectifier
Table 7 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1600 V Maximum RMS forward current per chip IFRMSM TH = 60 °C 70 A Maximum RMS current at rectifier output IRMSM TH = 60 °C 100 A Surge forward current IFSM tP = 10 ms Tvj = 25 °C 560 A Tvj = 150 °C 435 I2t - value I2t tP = 10 ms Tvj = 25 °C 1570 A²s Tvj = 150 °C 945 Table 8 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 50 A Tvj = 150 °C 1.05 V (table continues...) FP50R12N2T7P EconoPIM™2 module Datasheet 6 Revision 1.00 2022-02-01
Table 8 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Reverse current Ir Tvj = 150 °C, VR = 1600 V 1 mA Thermal resistance, junction to heat sink RthJH per diode, Valid with IFX pre-applied Thermal Interface Material
1.10 K/W
Tvj, op -40 150 °C
5 IGBT-Chopper
Table 9 Maximum rated values Parameter Symbol Note or test condition Values Unit Collector-emitter voltage VCES Tvj = 25 °C 1200 V Continuous DC collector current ICDC Tvj max = 175 °C TH = 110 °C 25 A Repetitive peak collector current ICRM tP = 1 ms 50 A Gate-emitter peak voltage VGES ±20 V Table 10 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Collector-emitter saturation voltage VCE sat IC = 25 A, VGE = 15 V Tvj = 25 °C 1.60 1.85 V Tvj = 125 °C 1.74 Tvj = 175 °C 1.82 Gate threshold voltage VGEth IC = 0.525 mA, VCE = VGE, Tvj = 25 °C 5.15 5.80 6.45 V Gate charge QG VGE = ±15 V, VCE = 600 V 0.395 µC Internal gate resistor RGint Tvj = 25 °C 0 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 4.77 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.017 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 25 °C 0.004 mA Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C 100 nA Turn-on delay time (inductive load) tdon IC = 25 A, VCE = 600 V, VGE = ±15 V, RGon = 9.1 Ω Tvj = 25 °C 0.041 µs Tvj = 125 °C 0.043 Tvj = 175 °C 0.044 (table continues...) FP50R12N2T7P EconoPIM™2 module Datasheet 7 Revision 1.00 2022-02-01
Table 10 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Rise time (inductive load) tr IC = 25 A, VCE = 600 V, VGE = ±15 V, RGon = 9.1 Ω Tvj = 25 °C 0.025 µs Tvj = 125 °C 0.028 Tvj = 175 °C 0.030 Turn-off delay time (inductive load) tdoff IC = 25 A, VCE = 600 V, VGE = ±15 V, RGoff = 9.1 Ω Tvj = 25 °C 0.230 µs Tvj = 125 °C 0.320 Tvj = 175 °C 0.350 Fall time (inductive load) tf IC = 25 A, VCE = 600 V, VGE = ±15 V, RGoff = 9.1 Ω Tvj = 25 °C 0.140 µs Tvj = 125 °C 0.220 Tvj = 175 °C 0.280 Turn-on energy loss per pulse Eon IC = 25 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 9.1 Ω, di/dt = 810 A/µs (Tvj = 175 °C) Tvj = 25 °C 1.47 mJ Tvj = 125 °C 2.05 Tvj = 175 °C 2.39 Turn-off energy loss per pulse Eoff IC = 25 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 9.1 Ω, dv/dt =
3120 V/µs (Tvj = 175 °C)
Tvj = 25 °C 1.65 mJ Tvj = 125 °C 2.58 Tvj = 175 °C 3.13 SC data ISC VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj=150 °C 90 A tP ≤ 7 µs, Tvj=175 °C Thermal resistance, junction to heat sink RthJH per IGBT , Valid with IFX pre-applied Thermal Interface Material
1.19 K/W
Tvj op -40 175 °C Note: T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
6 Diode, Chopper
Table 11 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V Continuous DC forward current IF 25 A (table continues...) FP50R12N2T7P EconoPIM™2 module Datasheet 8 Revision 1.00 2022-02-01
Table 11 (continued) Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak forward current IFRM tP = 1 ms 50 A I2t - value I2t VR = 0 V, tP = 10 ms Tvj = 125 °C 125 A²s Tvj = 175 °C 95 Table 12 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 25 A, VGE = 0 V Tvj = 25 °C 1.83 2.30 V Tvj = 125 °C 1.70 Tvj = 175 °C 1.63 Peak reverse recovery current IRM IF = 25 A, VR = 600 V, VGE = -15 V, -diF/dt = 810 A/µs (Tvj = 175 °C) Tvj = 25 °C 21.7 A Tvj = 125 °C 26.7 Tvj = 175 °C 29.8 Recovered charge Qr IF = 25 A, VR = 600 V, VGE = -15 V, -diF/dt = 810 A/µs (Tvj = 175 °C) Tvj = 25 °C 1.69 µC Tvj = 125 °C 3.29 Tvj = 175 °C 4.29 Reverse recovery energy Erec IF = 25 A, VR = 600 V, VGE = -15 V, -diF/dt = 810 A/µs (Tvj = 175 °C) Tvj = 25 °C 0.63 mJ Tvj = 125 °C 1.28 Tvj = 175 °C 1.69 Thermal resistance, junction to heat sink RthJH per diode, Valid with IFX pre-applied Thermal Interface Material
1.63 K/W
Tvj op -40 175 °C Note: T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
7 NTC-Thermistor
Table 13 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Rated resistance R25 TNTC = 25 °C 5 kΩ Deviation of R100 ΔR/R TNTC = 100 °C, R100 = 493 Ω -5 5 % Power dissipation P25 TNTC = 25 °C 20 mW (table continues...) FP50R12N2T7P EconoPIM™2 module Datasheet 9 Revision 1.00 2022-02-01
Table 13 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Specification according to the valid application note. FP50R12N2T7P EconoPIM™2 module Datasheet 10 Revision 1.00 2022-02-01
8 Characteristics diagrams
Output characteristic (typical), IGBT , Inverter IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT , Inverter IC = f(VCE) Tvj = 175 °C 100 100 Transfer characteristic (typical), IGBT , Inverter IC = f(VGE) VCE = 20 V Switching losses (typical), IGBT , Inverter E = f(IC) RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 600 V, VGE = ± 15 V 5 6 7 8 9 10 11 12 13 100 0 10 20 30 40 50 60 70 80 90 100 FP50R12N2T7P EconoPIM™2 module Datasheet 11 Revision 1.00 2022-02-01
Switching losses (typical), IGBT , Inverter E = f(RG) IC = 50 A, VCE = 600 V, VGE = ± 15 V Switching times (typical), IGBT , Inverter t = f(IC) RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 90 100 0.001 0.01 0.1 Switching times (typical), IGBT , Inverter t = f(RG) IC = 50 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C Transient thermal impedance , IGBT , Inverter Zth = f(t) 0 10 20 30 40 50 60 70 80 0.01 0.1 0.001 0.01 0.1 1 10 0.01 0.1 FP50R12N2T7P EconoPIM™2 module Datasheet 12 Revision 1.00 2022-02-01
Reverse bias safe operating area (RBSOA), IGBT , Inverter IC = f(VCE) RGoff = 7.5 Ω, VGE = ±15 V, Tvj = 175 °C Voltage slope (typical), IGBT , Inverter dv/dt = f(RG) IC = 50 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C 0 200 400 600 800 1000 1200 1400 100 110 120 130 0 10 20 30 40 50 60 70 80 Capacity characteristic (typical), IGBT , Inverter C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C Gate charge characteristic (typical), IGBT , Inverter VGE = f(QG) IC = 50 A, Tvj = 25 °C 0 10 20 30 40 50 60 70 80 90 100 0.01 0.1 100 1000 -15 -10 FP50R12N2T7P EconoPIM™2 module Datasheet 13 Revision 1.00 2022-02-01
Forward characteristic (typical), Diode, Inverter IF = f(VF) Switching losses (typical), Diode, Inverter Erec = f(IF) VCE = 600 V, RGon = 7.5 Ω 100 0 10 20 30 40 50 60 70 80 90 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 600 V, IF = 50 A Transient thermal impedance, Diode, Inverter Zth = f(t) 0 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.001 0.01 0.1 1 10 0.01 0.1 FP50R12N2T7P EconoPIM™2 module Datasheet 14 Revision 1.00 2022-02-01
Forward characteristic (typical), Diode, Rectifier IF = f(VF) Transient thermal impedance, Diode, Rectifier Zth = f(t) 100 0.001 0.01 0.1 1 10 0.01 0.1 Output characteristic (typical), IGBT-Chopper IC = f(VCE) VGE = 15 V Forward characteristic (typical), Diode, Chopper IF = f(VF) FP50R12N2T7P EconoPIM™2 module Datasheet 15 Revision 1.00 2022-02-01
Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 0 25 50 75 100 125 150 175 100 1000 10000 100000 FP50R12N2T7P EconoPIM™2 module Datasheet 16 Revision 1.00 2022-02-01
9 Circuit diagram
J Figure 1 Infineon Figure 2 FP50R12N2T7P EconoPIM™2 module Datasheet 17 Revision 1.00 2022-02-01
11 Module label code
Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1 – 5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 Example 7154914284655054991153071549142846550549911530 Figure 3 FP50R12N2T7P EconoPIM™2 module Datasheet 18 Revision 1.00 2022-02-01
Revision history
Document revision Date of release Description of changes 1.00 2022-02-01 Initial version FP50R12N2T7P EconoPIM™2 module Datasheet 19 Revision 1.00 2022-02-01
All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-02-01 Published by Infineon Technologies AG
81726 Munich, Germany
© 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABB324-001 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.