FP2101RW GWSEMI | Alldatasheet

Document overview

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Technical content

Features

 V DS =‐20V, I D =‐2.0A  R DS(ON) <110mΩ@V GS =-4.5V  R DS(ON) <137mΩ@V GS =-2.5V  P‐C h a n n e lS w i t c hw i t hL o wR D S ( O N )  Lead free product is acquired  Surface Mount Package Main Applications  Battery Protection  Load Switch  Power Management SOT-323 Top View D G S FP2101RW P-Channel Enhancement MOSFET G Schematic diagram

Electrical Characteristics

=25ºC unless noted otherwise) Symbol Parameters Conditions Min. Typ. Max. Unit Off Characteristics BV DSS Drain‐Source Breakdown Voltage V GS =‐0V ,I D =‐250μA ‐20 Volt I DSS Zero Gate Voltage Drain Current V DS =‐15V, V GS =0V ‐0.3 μA I GSS Gate‐Body Leakage Current V GS =±10V, V DS =0V ±100 nA On Characteristics(Note 3) V GS(th) Gate Threshold Voltage V DS GS D R DS(ON) Drain‐Source On‐State Resistance V GS =‐4.5V, I D =‐1.5A 94 110 mΩ V GS =‐2.5V, I D =‐1.5A 122 137 mΩ g FS Forward Transconductance V DS =‐10V, I D =‐0.5A 1.2 S Dynamic Characteristics(Note 4) C iss Input Capacitance V DD =‐16V, V GS =0V , F=1MHz 413 pF C oss Output Capacitance 45 pF C rss Reverse Transfer Capacitance 19 pF Switching Characteristics(Note 4) td(on) Turn‐on Delay Time V DD =‐10V, I D =‐500mA V GS =‐4.5V, R GEN =10Ω 13 nS tr Turn‐on Rise Time 7.5 nS td(off) Turn‐Off Delay Time 36.2 nS tf Turn‐Off Fall Time 23.2 nS Drain‐Source Diode Characteristics V SD Diode Forward Voltage (Note 3) V GS =0V, I S =‐2.0A ‐1.2 V I S Diode Forward Current (Note 2) ‐2.0 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Surface mounted on FR4 Board, t≤10 sec 3 .P u l s eT e s t :P u l s eW i d t h≤300μs, Duty Cycle≤2% 4. Guaranteed by design, not subject to production FP2101RW P-Channel Enhancement MOSFET

Typical Electrical and Thermal Characteristics FP2101RW P-Channel Enhancement MOSFET

c A D e b L S E DIM MILLMETERS INCHES MIN MAX MIN MAX A 0.80 1.10 0.031 0.043 A1 0.00 0.10 0.0000 0.004 A2 0.80 1.00 0.031 0.039 b 0.20 0.40 0.008 0.016 c 0.08 0.15 0.003 0.006 D 2.00 2.20 0.079 0.087 E 1.65 1.95 0.064 0.076 E1 1.15 1.35 0.045 0.053 e 0.65 TYP 0.026 TYP e1 1.20 1.40 0.047 0.055 L 0.26 0.46 0.010 0.018 L1 0.525 Ref 0.021 Ref S 0.50 Ref 0.020 Ref Plastic surface mounted package; 3 leads SOT-323 PACKAGE OUTLINE FP2101RW P-Channel Enhancement MOSFET