FP150R07N3E4

FP150R07N3E4 ISC | Alldatasheet

Document overview

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Technical content

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FEATURES

• Trench Field Stoptechnology
• Free wheelingdiodeswith fastandsoft reverserecovery
• Industrial standard package with copper baseplate

APPLICATIONS

• MotorDrives,Motion /Servo Drives
• Inverterand Power supplies IGBT,INVERTER MAXIMUM RATEDVALUES(TC=25℃ unlessotherwise specified) SYMBOL PARAMETER VALUE UNIT VCES Collector-EmitterVoltage 650 V VGES Gate-EmitterVoltage ±30 V IC CollectorCurrent-Continuous @TC=80℃ 150 A ICM RepetitivePeakCollectCurrent@tp=1ms 300 A Ptot TotalPower Dissipation, TC=25℃ 430 W ELECTRICALCHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCES Collector-EmitterBreakdownVoltage VGE=0,IC=0.25mA 650 - - V VGE(TH) Gate-EmitterThresholdVoltage VGE=VCE,IC=2.6mA 5.2 - 6.6 V VCE(sat) Collector-EmitterSaturationVoltage IC=150A,VCE=15V, TC=25℃ - 1.90 1.95 V IC=150A,VCE=15V, TC=125℃ - 2.4 - V ICES ZeroGateVoltageCollectorCurrent VCE=650V,VGE=0 - - 1.0 mA IGES Gate-EmitterLeakageCurrent VGE=VGES,VCE=0 - - ±500 nA

www.iscsemi.com 2 Cies InputCapacitance VGE =0V, VCS =25V, f=1.0MHz - 10.2 - nF Cres ReverseTransferCapacitance - 0.220 - QG GateCharge VGE=+15V...-15V - 120 - nC TJ OperatingJunctionTemperature -40 - 150 ℃ ISC SCData VCC=300V,VGE≤15V, tp≤10us,TJ=150℃ - 450 - A SWITCHINGCHARACTERISTICS(TC=25℃ unlessotherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT td(on) Turn-onDelayTime VGE = ±15V, IC=100A, VCE =300V, RG= 8.2Ω TJ=25℃ L=100nH - 126 - ns tr Turn-onRiseTime - 38 - td(off) Turn-offDelayTime - 170 - tf Turn-offFallTime - 80 - Eon Turn-onswitchinglosses - 1.1 - mJ Eoff Turn-offswitchinglosses - 2.2 - DIODE,INVERTER MAXIMUM RATEDVALUES(TC=25℃ unless otherwise specified) SYMBOL PARAMETER VALUE UNIT VRRM RepetitivePeakReverseVoltage 650 V IF DiodeContinuousForwardCurrentTC =80°C 150 A IFRM RepetitivePeakForwardCurrent@tp=1ms 300 A ELECTRICALCHARACTERIS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF DiodeForwardVoltage IF=150A,TC=25℃ - 1.45 2.85 V VF DiodeForwardVoltage IF=150A,TC=125℃ - 1.50 - V IRM PeakReverserecoverycurrent VR=300V,IF=150A, -diF/dt=5300A/us, VGE =15V TJ=25℃ - 150 - A Qrr ReverseRecoveryCharge - 8.0 - uC Err ReverseRecoveryEnergy - 1.7 - mJ

www.iscsemi.com 3 DIODE,RECTIFIER MAXIMUM RATEDVALUES(TC=25℃ unless otherwise specified) SYMBOL PARAMETER VALUE UNIT VRRM RepetitivePeakReverseVoltage 1800 V IFAV ForwardCurrentperDiode 100 A IFSM SurgeForwardCurrent@tp=10ms,halfsinewave TJ =25°C 960 A TJ OperatingJunctionTemperature -40-150 ℃ IGBT,BRAKE-CHOPPER MAXIMUM RATEDVALUES(TC=25℃ unlessotherwise specified) SYMBOL PARAMETER VALUE UNIT VCES Collector-EmitterVoltage 650 V VGES Gate-EmitterVoltage ±30 V IC CollectorCurrent-Continuous @TC=80℃ 100 A ICM RepetitivePeakCollectCurrent@tp=1ms 200 A Ptot TotalPower Dissipation, TC=25℃ 330 W ELECTRICALCHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCES Collector-Emitter Breakdown Voltage VGE=0,IC=0.25mA 650 - - V VGE(TH) Gate-EmitterThresholdVoltage VGE=VCE,IC=1.6mA 5.2 - 6.6 V VCE(sat) Collector-EmitterSaturationVoltage IC=150A,VCE=15V, IC=150A,VCE=15V, TC=125℃ - 2.4 - V ICES ZeroGateVoltageCollectorCurrent VCE=650V,VGE=0 - - 1.0 mA

www.iscsemi.com 4 IGES Gate-EmitterLeakageCurrent VGE=VGES,VCE=0 - - ±500 nA Cies InputCapacitance VGE =0V, VCS =25V, f=1.0MHz - 8.5 - nF Cres ReverseTransferCapacitance - 0.11 - QG GateCharge VGE=+15V...-15V - 120 - nC TJ OperatingJunctionTemperature -40 - 150 ℃ ISC SCData VCC=300V,VGE≤15V, tp≤10us,TJ=125℃ - 300 - A SWITCHINGCHARACTERISTICS(TC=25℃ unlessotherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT td(on) Turn-onDelayTime VGE = ±15V, IC=100A, VCE =300V, RG= 8.2Ω L=100nH, TJ=25℃ - 95 - ns tr Turn-onRiseTime - 26 - td(off) Turn-offDelayTime - 240 - tf Turn-offFallTime - 175 - Eon Turn-onswitchinglosses - 2.2 - mJ Eoff Turn-offswitchinglosses - 3.4 - DIODE,BRAKE-CHOPPER MAXIMUM RATEDVALUES(TC=25℃ unless otherwise specified) SYMBOL PARAMETER VALUE UNIT VRRM RepetitivePeakReverseVoltage 650 V IF DiodeContinuousForwardCurrent 50 A IFRM RepetitivePeakForwardCurrent@tp=1ms 100 A TJ OperatingJunctionTemperature -40-150 ℃ ELECTRICALCHARACTERIS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF DiodeForwardVoltage IF=50A,TC=25℃ - 1.45 1.95 V VF DiodeForwardVoltage IF=50A,TC=125℃ - 1.65 - V

www.iscsemi.com 5 trr DiodeReverseRecoveryTime VR=300V,IF=50A, -diF/dt=2100A/us, VGE =15V TJ=25℃ - 75 - ns IRM PeakReverserecoverycurrent - 50 - A Qrr ReverseRecoveryCharge - 1.7 - uC Err ReverseRecoveryEnergy - 2.0 - mJ NTC-THERMISTOR ELECTRICALCHARACTERIS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT R25 Ratedresistance TC=25℃ - 5 - kΩ ΔR/R DeviationofR100 DeviationofR100 -5 - 5 % P25 PowerDissipation Power Dissipation - - 20 mW B25/50 B-Value MODULE SYMBOL PARAMETER MIN TYP MAX UNIT Viso IsolationVoltage(AllTerminalsShorted) 2500 - - V Tstg StorageTemperature -40 - 125 ℃ RθCH ThermalResistance,CasetoHeatsink - 0.009 - ℃/W Rθjc ThermalResistance,Junction-to-Case - - 3.6 ℃/W G Weight -- 300 -- g

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www.iscsemi.com 7 PRODUCTDISCLAIMER ISCreserves the rightstomake changes ofthe contentherein the datasheetat anytimewithout notification.The information containedherein ispresented only asaguide forthe applicationsof our products. ISCproductsareintendedforusageingeneralelectronicequipment.Theproductsarenotdesignedfor usein equipment whichrequire specialized quality and/orreliability,orinequipmentwhichcouldhave applicationsin hazardous environments,aerospaceindustry,ormedicalfield.Pleasecontactus ifyou intend ourproducts to beusedin thesespecial applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsanyand allliability,including without limitationspecial,consequentialorincidentaldamages. Itis strictly prohibitedtoreprint orcopypartorallofthis datasheet withoutpermissionfrom ISC.