FP1205 GWSEMI | Alldatasheet
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VDS=-12V, ID=-5A RDS(ON)=30mΩ@VGS=-4.5V(Typ.) RDS(ON)=38mΩ@VGS=-2.5V(Typ.) High Power and current handing capability Lead free product is acquired Surface Mount Package G Schematic diagram Main Applications Battery Protection Load Switch Power Management SOT-23 D G S FP1205 P-Channel Enhancement MOSFET
Electrical Characteristics (TAmbient =25ºC unless noted otherwise) Symbol Parameters Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0 V, ID=250μA -12 Volt IDSS Zero Gate Voltage Drain Current VDS=-12V, VGS=0V -1 μA IGSS Gate-Body Leakage Current VGS=±12V, VDS=0V ±100 nA On Characteristics(Note 3) VGS(th) Gate Threshold Voltage VDS= VGS, ID=-250μA -0.45 -0.7 -1.2 Volt RDS(ON) Drain-Source On-State Resistance VGS=-4.5V, ID=-4.2A 30 45 mΩ VGS=-2.5V, ID=-4.0A 38 60 mΩ gFS Forward Transconductance VDS=-5V, ID=-4A 8.5 S Dynamic Characteristics(Note 4) Ciss Input Capacitance VDD=-10V, VGS=0V , F=1MHz 740 pF Coss Output Capacitance 290 pF Crss Reverse Transfer Capacitance 190 pF Switching Characteristics(Note 4) td(on) Turn-on Delay Time VDD=-10V, ID=-2.8A VGEN=-4.5V, RGEN=60Ω 12.5 nS tr Turn-on Rise Time 35 nS td(off) Turn-Off Delay Time 30 nS tf Turn-Off Fall Time 10 nS Qg Total Gate Charge VDS=-10V, ID=-3A, VGS=-4.5V 7.8 nC Qgs Gate-Source Charge 1.2 nC Qgd Gate-Drain Charge 1.6 nC Drain-Source Diode Characteristics VSD Diode Forward Voltage(Note 3) VGS=0V, IS=-1.25A -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Surface mounted on FR4 Board, t≤10 sec 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 4. Guaranteed by design, not subject to production FP1205 P-Channel Enhancement MOSFET
c L1A1 A A2 D e b L S E1 E DIM MILLMETERS INCHES MIN MAX MIN MAX A 0.90 1.12 0.053 0.044 A1 0.01 0.20 0.0004 0.004 A2 0.90 1.00 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.09 0.18 0.003 0.007 D 2.80 3.00 0.110 0.120 E 2.10 2.60 0.083 0.104 E1 1.20 1.40 0.470 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref FP1205 P-Channel Enhancement MOSFET Plastic surface mounted package; 3 leads SOD-23 PACKAGE OUTLINE