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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FP0045E DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4470 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Option __ = Straight Leads DB = Down Bend UB = Up Bend Package 3/ M = TO-254 Z = TO-254Z SFF60P05M SFF60P05Z -60 AMP/-50 Volts 25 m typical P-Channel POWER MOSFET Features:  Rugged Construction with Poly Silicon Gate  Low RDS(on) and High Transconductance  Excellent High Temperature Stability  Very Fast Switching Speed  Fast Recovery and Superior dv/dt Performance  Increased Reverse Energy Capability  Low Input and Transfer Capacitance for Easy Paralleling  Hermetically Sealed  TX, TXV, and Space Level Screening Available. Consult Factory. Maximum Ratings4/ Symbol Value Units Drain - Source Voltage VDS -50 V Gate – Source Voltage VGS +20 V Continuous Drain Current ID -60 A Operating & Storage Temperature TOP & TSTG -55 to +150 ºC Thermal Resistance, Junction to Case RJC 0.8 ºC/W Total Device Power Dissipation TC = 25ºC TC = -55ºC PD 156

118 Watts

NOTES: TO-254 (M) TO-254Z (Z) *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Maximum current limited by package configuration. 4/ Unless otherwise specified, all electrical characteristics @25oC.

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FP0045E DOC Solid State Devices, Inc. Phone: (562) 404-4470 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF60P05M SFF60P05Z Electrical Characteristics 4/ Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS = 0V, ID = 250A) BVDSS -50 -70 –– Volts Drain to Source On State Resistance (VGS = -10V, ID = 60A) RDS(on)1 –– 0.021 0.033  Drain to Source On State Resistance (VGS = -10V, ID = 30A) RDS(on)2 –– 0.021 ––  Gate Threshold Voltage (VDS = VGS, ID = -250A) VGS(th) -2.0 -2.8 -4.0 Volts Forward Transconductance (VDS > ID(on) x RDS(on) Max, IDs = 50% of Rated ID) gfs –– 50 –– S Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0V) (VDS = 40 V, VGS = 0V) TA = 25oC TA = 125oC IDSS 0.005 50 A Gate to Source Leakage (For Gate to Source Leakage At Rated VGS IGSS -10 -100 100 A Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = -10V VDD = 40V ID = 60A Qg Qgs Qgd 200 300 125 nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time V DD = 25 V ID = 30 A RL = 6.2 t(on) td(on) tr 125 –– ns t(off) td(off) tf 225 Diode Forward Voltage I S = Rated ID VGS = 0V TJ = 25ºC VSD –– -1.3 -1.9 Volts Diode Reverse Recovery Time IF = 10A di/dt = 100A/usec trr Qrr 140 200 ns Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = -25V f = 1 MHz Ciss Coss Crss 6000 1800 500 pF

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FP0045E DOC Solid State Devices, Inc. Phone: (562) 404-4470 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF60P05M SFF60P05Z PACKAGE OUTLINE: TO-254 (M) PACKAGE OUTLINE: TO-254Z (Z) Available with glass or ceramic seals – contact factory for details. Available Part Numbers: SFF60P05M, SFF60P05MUB, SFF60P05MDB; SFF60P05Z, SFF60P05ZUB, SFF60P05ZDB PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) Pin 1 Pin 2 Pin 3 PIN 1 PIN 3 PIN 2 PIN 1 PIN 2 PIN 3