FP0035 SSDI | Alldatasheet
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SOLID STATE DEVICES, INC. SFF9130-28D FEATURES: DATA SHEET #: FP0035D MAXIMUM RATINGS V GS ±20 VoltsGate to Source Voltage ID -11 Continuous Drain Current Drain to Source Voltage V DS -100 Amps Volts Watts
- Rugged construction with poly silicon gate
- Low RDS (on) and high transconductance
- Excellent high temperature stability
- Very fast switching speed
- Fast recovery and superior dv/dt performance
- Increased reverse energy capability
- Low input transfer capacitance for easy paralleling
- Hermetically sealed surface mount package
- TX, TXV and Space Level screening available
- Replaces: 2x IRF9130 Types
28 PIN CLCC
-11 AMP -100 VOLTS 0.30S DUAL UNCOMMITED P-CHANNEL POWER MOSFET Total Device Dissipation PD Thermal Resistance, Junction to Case (Both) R 2JC T op & T stg -55 to +150Operating and Storage Temperature oC DESIGNER'S DATA SHEET NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. oC/W3.5 CHARACTERISTIC SYMBOL VALUE UNIT PACKAGE OUTLINE: 28 PIN CLCC PIN OUT: SOURCE (1): 16 - 21 DRAIN (1): 24 - 28 GATE (1): 22 SOURCE (2): 9 - 14 DRAIN (2): 2 - 6 GATE (2): 8 NOTE: All drain/source pins must be connected on the PC board in order to maximize current carrying capability and to minimize RDS (on) T C = 25oC T C = 100oC T C = 25oC T C = 55oC E AS 84 mJSingle Pulse Avalange Energy E AR 7.5 mJRepetitive Avalange Energy
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
SOLID STATE DEVICES, INC. SFF9130-28D PRELIMINARY ELECTRICAL CHARACTERISTICS @ T J =25oC (Unless Otherwise Specified) VDrain to Source Breakdown Voltage (VGS =0 V , ID =1mA) -BV DSS - RATING SYMBOL MIN TYP MAX UNIT -100 SDrain to Source ON State Resistance 1/ (VGS = -10 V) -R DS(on) 0.30 0.35 VGate Threshold Voltage (VDS =VGS, ID =250:A) -V GS(th) -4.0-2.0 S(É)Forward Transconductance (VDS > ID(on) x RDS (on) Max, IDS = 7A) 5.0gfs -3.0 Zero Gate Voltage Drain Current (VDS = 80% rated VDS, VGS =0 V , TA = 25oC ) (VDS = 80% rated VDS, VGS =0 V , TA = 125oC ) -IDSS Gate to Source Leakage Forward Gate to Source Leakage Reverse -IGSS -100 100 -At rated VGS Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = -10 V olts 50% rated VDS ID = -11A Qg Qgs Qgd 7.1 nsec Turn on Delay Time Rise Time Turn off DELAY Time Fall Time VDD = 50% of rated VDS ID = 11A RG = 7.5S t d (on) tr td (off) tf 140 140 140 V-V SD -4.7- Diode Reverse Recovery Time Reverse Recovery Charge 125 trr Q RR 250 TJ = 25oC IF = 10A di/dt = 100A/:sec Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 V olts VDS = -25 V olts f = 1 MHz Ciss Coss Crss 860 350 125 pF nsec For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. Diode Forward Voltage (IS = rated ID , VGS = 0V , TJ = 25oC) nC nA -25 250 ID = 7A ID = 11A NOTES: 1/ All package pins of the same terminations (Drain/Source/Gate) must be connected together to minimize R DS(on) and maximize current carrying capability. VTemperature Coefficient of Breakdown Voltage 0.87)BV DSS )T J Phone: (562) 404-7855 * Fax: (562) 404-1773