FP0003 SSDI | Alldatasheet
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SOLID STATE DEVICES, INC SFF9240Z
14849 Firestone Boulevard - La Mirada,CA 90638 7
Phone: (714) 670-SSDI (7734) -_ Fax: (714) 522-7424 -11 AMP Designer’s Data Sheet -200 VOLTS 0.50 FEATURES: P-CHANNEL a - POWER MOSFET + Rugged construction with poly silicon gate - Low RDS(on) and high transconductance TO-254 TO-254Z - Excellent high temperature stability + Very fast switching speed - Fast recovery and superior dv/dt performance + Increased reverse energy capability 2 - Low input and transfer capacitance for easy paralleling ES <> - Hermetically sealed ° ZAR a - TX, TXV and Space Level Screening available - Replaces: IRF9240 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C 74 Total Device Dissipation @ TC=55°C 56 Watts PACKAGE OUTLINE: TO-254 PACKAGE OUTLINE: TO-254Z PIN OUT: PIN OUT: PIN 1: DRAIN PIN 1: DRAIN PIN 2: SOURCE PIN 2: SOURCE PIN 3: GATE PIN 3: GATE 260 545, "249 805 260 5354 #152 | ST 050 ra —_ | [ms = 7371270 ar $8 800 149, |e] 685 790 45 2 9°439 @) 270 as L | 535 Fl 3535 Lo “oY L 2s 4 z70b 500 ] 3 045 4p. Los0 3xe 138 190 BSC (2PL) ase 3003 4b 4 Locrsonse 4 Lasoasc Available with Glass or Ceramic Seals. Contact Factory for details. SSDI prior to release.
SFF9240Z SOLID STATE DEVICES, INC ‘ 14849 Firestone Boulevard: La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ TJ=25°C (Unless Otherwise Specified) [RATING = svmmon| mn | rye | max | unr Drain to Source Breakdown Voltage (VGS=0 V, ID=-250A) -200 Vv Drain to Source on State Resistance (VGS= -10 V, ID= -6 A) Rbs(on) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS= -10 V Gate Threshold Voltage (VDS=VGS, ID=-250,1A) Vasith) -2.0 -4.0 Vv Forward Transconductance (VDS > ID(on) X RDS(on) max., IDS= -6.0 A) gts Zero Gate Voltage Drain Current 'DS=80% rated voltage, VGS=0 V) 7250 pA \\VDS=80% rated VDS, VGS=0 V, TA=125°C) -1000 Gate to Source Leakage Forward VGS= +20V ~100 Gate to Source Leakage Reverse 100 Total Gate Charge VGS= 10 Volts Qg 38 Gate to Source Charge 80% rated Vos Qgs 8.0 Gate to Drain Charge =~ Qga 21 Turn on Delay Time VDD=-100 V td(on) 13 35 Rise Time ID=7A tr 45 85 Turn Off Delay Time RG= 9.19 ta(ott) 29 85 Fall Time tt 29 65 Diode Forward Voltage Vsp (IS= -11 A, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time far2e'e ter 270 nsec Reverse Recovery Charge di/dt=100 A/usec Qrr 2.0 uc Input Capacitance VGS=0 Volts Ciss 1100 1300 Output Capacitance VDS= -25 Volts Coss 375 450 Reverse Transfer Capacitance f= 1 MHz Crss 150 250 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.