FP0001 SSDI | Alldatasheet
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Technical content
SOLID STATE DEVICES, INC . one: "ax: i -11 AMP Designer’s Data Sheet “200 yours FEATURES: P-CHANNEL POWER MOSFET ® Rugged construction with poly silicon gate ® Low RDS(on) and high transconductance TO-257 = Excellent high temperature stability = Very fast switching speed = Fast recovery and superior dv/dt Performance = Increased reverse energy capability = Low input and transfer capacitance for easy paralleling = Hermetically sealed = TX, TXV and Space Level Screening available = Replaces: IRF9140 Types MAXIMUM RATINGS CHARACTERISTIC | svmeo. | vate | oun | [ Drain soucevorage | vos | 00 | Vos a c F emlRassars stances fe aoe | Total Device Dissipation @ TC=25°C 63 Total Device Dissipation @ TC=55°C 48 PACKAGE OUTLINE: TO-257 150 420 200 OVNI 4107] 390 | a.045 PIN OUT: T 035 PIN 1: DRAIN PIN 2: SOURCE shy 665 T PIN 3: GATE . 645 430) 927 . 1.132 | 410
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x 4035 dr 2 x100 BSC 20 BSC 025 SSDI prior to release.
srry | a SSDI SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25.C (Unless Otherwise Specified) [RATING = spon] own | tye | MAX | UNIT | Drain to Source Breakdown Voltage (VGS=0 V, ID=-250,A) BVpss Vv Drain to Source on State Resistance (VGS= -10 V, ID= -6 A) Rosion) 0.35 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=-250A) Vesitn) 4.0 v Forward Transconductance (VDS < ID(on) X RDS(on) max. , IDS= -6.0 A) SB) Zero Gate Voltage Drain Current ‘VDS=max rated voltage, VGS=0 y) -250 pA VDS=80% rated VDS, VGS=0 V, TA=125°C) -1000 Gate to Source Leakage Forward VGS= +20V -100 Gate to Source Leakage Reverse 100 Total Gate Charge VGS= -15 Volts Qg 38 Gate to Source Sharge 80% rated yos Qgs 8.0 Gate to Drain Charge = Qga 21 Turn on Delay Time _- ta(on) 30 Rise Time voo- 3 v tr 15 Turn Off Delay Time RG=4.72 ta(ott) 18 Fall Time tt 12 Diode Forward Voltage Vsp Vv (IS= -11 A, VGS=0 V, TJ=25°C) . TJ=150°C 270 Diode Reverse Recovery Time \\Fa-11 A nsec Reverse Recovery Charge didt=100 A’ sec 20 He Input Capacitance VGS=0 Volts 1100 1300 Output Capacitance VDS= -25 Volts 375 450 Reverse Transfer Capacitance fe 1 MHz 150 250 SAFE OPERATING AREA {8.0.A.) Te = 25 ¢, BC. Comm ES S22 a Eee ee 8 oe : eS eae Fe a ST 2 hl SPS A LCI Cr ” RAN TO SOURCE voutace (vos) 00