FN0608D5 GWSEMI | Alldatasheet

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Technical content

Features

 VDS=60V, ID=60A  RDS(ON)=7mΩ@VGS=10V(typ.)  High Power and current handing capability  Lead free product is acquired  Surface Mount Package D G Schematic diagram Main Applications  Battery Protection  Load Switch  Power Management G S S S D D D D DFN5x6 Top View N-Channel Enhancement MOSFET FN0608D5

Electrical Characteristics (TAmbient=25º C unless noted otherwise) Symbol Parameters Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 Volt IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V ±100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA 1.2 1.7 2.5 Volt RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=15A 7.0 9.5 mΩ VGS=4.5V, ID=12A 9.0 12 mΩ Dynamic Characteristics Ciss Input Capacitance VDD=30V, VGS=0V , F=1MHz 1090 pF Coss Output Capacitance 309 pF Crss Reverse Transfer Capacitance 8.5 pF Switching Characteristics td(on) Turn-on Delay Time VDD=30V, VGS=10V RG=3Ω, ID=12A 4.8 nS tr Turn-on Rise Time 7.6 nS td(off) Turn-Off Delay Time 24 nS tf Turn-Off Fall Time 8.9 nS Qg Total Gate Charge VGS=10V, VDS=30V, ID=15A 16.5 nC Qgs Gate-Source Charge 2.6 nC Qgd Gate-Drain Charge 2.7 nC Drain-Source Diode Characteristics VSD Diode Forward Voltage VGS=0V, IS=10A 0.72 1.4 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Surface mounted on FR4 Board, t≤10 sec 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 4. Guaranteed by design, not subject to production FN0608D5

Typical Electrical and Thermal Characteristics FN0608D5

Plastic surface mounted package; DF N5x6