FMY4A

FMY4A KEXIN | Alldatasheet

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www.kexin.com.cn 1 SMD Type Transistors Power Management(Dual Transistors) FMY4A ■ Features

• Collector-emitter voltage: Tr1=-50V,Tr2=50V
• Collector current: Tr1=-150mA,Tr2=150mA ■ Absolute Maximum Ratings Ta = 25℃ Tr1 Tr2 Collector-base voltage VCBO -60 60 V Collector-emitter voltage VCEO -50 50 V Emitter-base voltage VEBO -6 7 V Collector current IC -150 150 mA Power dissipation(Total) PD mW Operating and Storage and Temperature Range Tj, TSTG ℃ Parameter Symbol Rating Unit 300 -55 to +150 Unit: mm (4) (5) Tr Tr (1)(2)(3)

SMD Type ICSMD Type Transistors FMY4A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC = -50 μA, IE = 0 -60 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = -1 mA, IB = 0 -50 V Emitter-Base Breakdown Voltage V(BR)EBO IC = -50 μA, IC = 0 -6 V Collector cutoff current ICBO VCB=-60V, IE=0 -100 nA Emitter cutoff current IEBO VEB=-6V, IC=0 -100 nA DC current gain hFE VCE=-6V, IC= -1mA 120 560 collector-emitter saturation voltage * VCE(sat) IC = -50 mA; IB = -5 mA -0.5 V Transition frequency fT IC = -2 mA; VCE = -12 V; f = 100 MHz 140 MHz Collector output capacitance Cob VCB=-12V, IE=0A, f=1MHz 5 pF Collector-Base Breakdown Voltage V(BR)CBO IC = 50 μA, IE = 0 60 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1 mA, IB = 0 50 V Emitter-Base Breakdown Voltage V(BR)EBO IC = 50 μA, IC = 0 7 V Collector cutoff current ICBO VCB=60V, IE=0 100 nA Emitter cutoff current IEBO VEB=7V, IC=0 100 nA DC current gain hFE VCE=6V, IC= 1mA 120 560 collector-emitter saturation voltage * VCE(sat) IC = 50 mA; IB = 5 mA 0.4 V Transition frequency fT IC = 2 mA; VCE = 12 V; f = 100 MHz 180 MHz Collector output capacitance Cob VCB=12V, IE=0A, f=1MHz 3.5 pF * pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. Transistor Tr1 Transistor Tr2 ■ Marking Marking Y4 www.kexin.com.cn 2 ■ Typical Characteristics Fig.1 Grounded emitter propagation characteristics −0.2 COLLECTOR CURRENT : Ic ( mA) −50 −20 −10 −0.5 −0.2 V CE = −6V BASE TO EMITTER VOLTAGE : V BE Ta=100˚C 25˚C −40˚C Fig.2 Grounded emitter output characteristics (Ι) −0.4 −1.20 −10 −0.8 −1.6 −2.0 −3.5µA −7.0 −10.5 −14.0 −17.5 −21.0 −24.5 −28.0 −31.5 I B Ta=25˚C −35.0 COLLECTOR CURRENT : I C mA) COLLECTOR TO MITTER VOLTAGE : V CE Fig.3 Grounded emitter output characteristics (ΙΙ) −40 −80 −20 −60 −100 I B Ta=25˚C COLLECTOR CURRENT : I C mA COLLECTOR TO EMITTER VOLTAGE : V CE −50µA −100 −150 −200 −250 −500 −450 −400 −350 −300 Tr (PNP)

www.kexin.com.cn 3 SMD Type ICSMD Type Transistors FMY4A Fig.4 DC current gain vs. collector current (Ι) 500 200 100 DC CURRENT GAIN : h FE Ta=25˚C V CE = −5V −3V −1V COLLECTOR CURRENT : I C mA) Fig.5 DC current gain vs. collector current (ΙΙ) 500 200 100 DC CURRENT GAIN : h FE COLLECTOR CURRENT : I C mA) V CE = −6V Ta=100˚C −40˚C 25˚C Fig.6 Collector-emitter saturation voltage vs. collector current (Ι) −0.1 −0.5 −0.2 −0.05 Ta=25˚C COLLECTOR CURRENT : I C mA) I C B COLLECTOR SATURATION VOLTAGE : V CE(sat) Fig.8 Gain bandwidth product vs. emitter current 50 1000.5 20 100 200 500 1000 12 5 10 EMITTER CURRENT : I E mA) TRANSITION FREQUENCY : f T MHz) Ta=25˚C V CE = − 12V Fig.7 Collector-emitter saturation voltage vs. collector current (II) −0.1 −0.5 −0.2 −0.05 COLLECTOR CURRENT : I C mA) l C B =10 Ta=100˚C 25˚C −40˚C COLLECTOR SATURATION VOLTAGE : V CE(sat) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage COLLECTOR TO BASE VOLTAGE : V CB (V) EMITTER TO BASE VOLTAGE : V EB (V) COLLECTOR OUTPUT CAPACITANCE : Cob ( pF) EMITTER INPUT CAPACITANCE : Cib ( pF) −0.5 −20 −1 −2 −5 −10 Cib Cob Ta=25˚C f=1MHz I E I C NPN Tr Fig.10 Grounded emitter propagation characteristics 0.1 0.2 0.5 Ta 100 V CE =6V COLLECTOR CURRENT : I C (mA) BASE TO EMITTER VOLTAGE : V BE (V) −55 Fig.11 Grounded emitter output characteristics ( Ι ) 100 COLLECTOR CURRENT : I C (mA) COLLECTOR TO EMITTER VOLTAGE : V CE (V) 0.05mA 0.10mA 0.15mA 0.25mA 0.30mA 0.35mA 0.20mA Ta=25°C I B =0A 0.40mA 0.50mA 0.45mA 4 8 12 16 I B =0A Ta=25°C COLLECTOR CURRENT : I C (mA) COLLECTOR TO EMITTER VOLTAGE : V CE (V) 3µA 6µA 9µA 12µA 15µA 18µA 21µA 24µA 27µA 30µA Fig.12 Grounded emitter output characteristics ( ΙΙ )

SMD Type ICSMD Type Transistors FMY4A www.kexin.com.cn 4 0.2 0.5 1 2 5 10 20 50 100 200 100 200 500 V CE =5V Ta=25°C Fig.13 DC current gain vs. collector current ( Ι ) DC CURRENT GAIN : h FE COLLECTOR CURRENT : I C (mA) 0.2 0.5 1 2 5 10 20 50 100 200 100 200 500 25°C −55°C Ta=100°C V CE Fig.14 DC current gain vs. collector current ( ΙΙ ) DC CURRENT GAIN : h FE COLLECTOR CURRENT : I C (mA) Fig.15 Collector-emitter saturation voltage vs. collector current 0.2 COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) COLLECTOR CURRENT : I C (mA) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 I C B =50 Ta=25°C Fig.16 Collector-emitter saturation voltage vs. collector current ( Ι ) 0.2 COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) COLLECTOR CURRENT : I C (mA) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 I C B =10 Ta=100°C 25°C −55°C Fig.17 Collector-emitter saturation voltage vs. collector current (ΙΙ) COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) COLLECTOR CURRENT : I C (mA) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 I C B =50 Ta=100°C 25°C −55°C Fig.18 Gain bandwidth product vs. emitter current 100 200 500 Ta=25°C V CE =6V EMITTER CURRENT : I E (mA) TRANSITION FREQUENCY : f T (MHz) Fig.20 Base-collector time constant vs. emitter current BASE COLLECTOR TIME CONSTANT : Cc·r bb' (ps) EMITTER CURRENT : I E (mA) 100 200 Ta=25°C f=32MH Z V CB =6V Fig.19 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage COLLECTOR TO BASE VOLTAGE : V CB (V) EMITTER TO BASE VOLTAGE : V EB (V) COLLECTOR OUTPUT CAPACITANCE : Cob ( pF) EMITTER INPUT CAPACITANCE : Cib ( pF) 0.2 0.5 1 2 5 10 20 50 Cob Ta=25°C f 1MHz I E =0A I C =0A Cib