FMY1AT148 ROHM

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Rev.A 1/4 Emitter common (dual transistors) EMY1 / UMY1N / FMY1A zFeatures 1) Includes a 2SA1037AK and a 2SC2412K transistor in a EMT or UMT or SMT package. 2) PNP and NPN transistors have common emitters. 3) Mounting cost and area can be cut in half. zStructure Epitaxial planar type PNP / NPN silicon transistor zEquivalent circuit EMY1 / UMY1N FMY1A Tr1Tr2 (3) (4) (5) (2) (1) Tr1Tr2 (3) (2) (1) (4) (5) zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Tr1 Tr2 VCBO 60 50VCEO VEBO 7 IC 150 −60 −50 −150 Tj 150 Tstg −55 to +150 P C EMY1, UMY1N 150 (TOTAL) Unit V V V mA mW FMY1A 300 (TOTAL) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Power dissipation ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. zExternal dimensions (Unit : mm) ROHM : EMT5 EMY1 ROHM : UMT5 EIAJ : SC-88A UMY1N Each lead has same dimensions Each lead has same dimensions 0to0.1 1.1 0.8 0.3to0.6 0.15 1.6 2.8 2.9 0.95 1.9 (4)(5) (1) 0.3 (3) 0.95 (2) Abbreviated symbol : Y1 Abbreviated symbol : Y1 Abbreviated symbol : Y1 ROHM : SMT5 EIAJ : SC-74A FMY1A 0.22 1.2 1.6 (1) (2) (3) (5) (4) 0.13 0.5 0.50.5 1.0 1.6 Each lead has same dimensions 0.9 0.15 0~0.1 0.1Min. 0.7 2.1 1.3 0.65 2.0 (4) (1) (5) 0.2 1.25 (2) 0.65 (3)

Rev.A 2/4 zElectrical characteristics (Ta = 25°C) Tr1 (PNP) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) Cob Min. −60 −50 120 −0.1 −0.1 560 −0.5 VI C=−50µA IC=−1mA IE=−50µA VCB=−60V VEB=−6V VCE=−6V, IC=−1mA IC/IB=−50mA/−5mA V V µA µA V PF Typ. Max. Unit Conditions fT − 140 − VCE=−12V, IE=2mA, f=100MHz VCB=−12V, IE=0A, f=1MHz MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Collector-emitter saturation voltage Output capacitance Tr2 (NPN) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) Cob Min. 120 0.1 0.1 560 0.4 3.5 VI C=50µA IC=1mA IE=50µA VCB=60V VEB=7V VCE=6V, IC=1mA IC/IB=50mA/5mA V V µA µA V PF Typ. Max. Unit Conditions fT − 180 − VCE=12V, IE=−2mA, f=100MHz VCB=12V, IE=0A, f=1MHz MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Collector-emitter saturation voltage Output capacitance zPackaging specifications Packaging type Code TR T148 3000 3000 Taping Basic ordering unit (pieces) UMY1N T2R 8000 EMY1 FMY1 Type zElectrical characteristic curves Tr1 (PNP) −0.2 COLLECTOR CURRENT : Ic (mA) −50 −20 −10 −0.5 −0.2 VCE=−6V BASE TO EMITTER VOLTAGE : VBE (V) Ta=100˚C 25˚C −40˚C Fig.1 Grounded emitter propagation characteristics −0.4 −1.20 −10 −0.8 −1.6 −2.0 −3.5µA −7.0 −10.5 −14.0 −17.5 −21.0 −24.5 −28.0 −31.5 IB=0 Ta=25˚C −35.0 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics ( I ) −40 −80 −20 −60 −100 IB=0 Ta=25˚C −50µA −100 −150 −200 −250 −500 −450 −400 −350 −300 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( II )

Rev.A 3/4 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( I ) 500 200 100 Ta=25˚C VCE=−5V −3V −1V 500 200 100 VCE=−6V Ta=100˚C −40˚C 25˚C DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current ( II ) −0.1 −0.5 −0.2 −0.05 Ta=25˚C IC/IB=50 COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Fig.6 Collector-emitter saturation voltage vs. collector current ( I ) −0.1 −0.5 −0.2 −0.05 lC/lB=10 Ta=100˚C 25˚C −40˚C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( II ) 50 1000.5 20 100 200 500 1000 12 5 1 0 Ta=25˚C VCE=−12V EMITTER CURRENT : IE (mA) TRANSITION FREQUENCY : fT (MHz) Fig.8 Gain bandwidth product vs. emitter current -0.5 -20 -1 -2 -5 -10 Cib Cob COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Ta=25˚C f=1MHz IE=0A IC=0A Tr2 (NPN) 0.1 0.2 0.5 Ta=100˚C VCE=6V 25˚C−55˚C COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) Fig.10 Grounded emitter propagation characteristics 100 0.05mA 0.10mA 0.15mA 0.25mA 0.30mA 0.35mA 0.20mA Ta=25˚C IB=0A 0.40mA 0.50mA 0.45mA COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.11 Grounded emitter output characteristics ( I ) 4 8 12 16 IB=0A Ta=25˚C 3µA 6µA 9µA 12µA 15µA 18µA 21µA 24µA 27µA 30µA COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.12 Grounded emitter output characteristics ( II )

Rev.A 4/4 0.2 0.5 1 2 5 10 20 50 100 200 100 200 500 VCE=5V Ta=25˚C DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.13 DC current gain vs. collector current ( I ) 0.2 0.5 1 2 5 10 20 50 100 200 100 200 500 25˚C −55˚C Ta=100˚C VCE=5V DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.14 DC current gain vs. collector current ( II ) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 IC/IB=50 Ta=25˚C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (mA) Fig.15 Collector-emitter saturation voltage vs. collector current ( I ) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 IC/IB=10 Ta=100˚C 25˚C −55˚C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (mA) Fig.16 Collector-emitter saturation voltage vs. collector current ( II ) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 IC/IB=50 Ta=100˚C 25˚C −55˚C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (mA) Fig.17 Collector-emitter saturation voltage vs. collector current ( III ) 100 200 500 Ta=25˚C VCE=6V EMITTER CURRENT : IE (mA) TRANSITION FREQUENCY : fT (MHz) Fig.18 Gain bandwidth product vs. emitter current 0.2 0.5 1 2 5 10 20 50 Cib Cob COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Fig.19 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Ta=25˚C f=1MHz IE=0A IC=0A 100 200 EMITTER CURRENT : IE (mA) Fig.20 Base-collector time constant vs. emitter current BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps) Ta=25˚C f=32MHZ VCB=6V

Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.