FMY1A

FMY1A KEXIN | Alldatasheet

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www.kexin.com.cn 1 SMD Type Transistors Emitter Common (Dual Transistors) FMY1A ■ Features

• PNP and NPN transistors have common emitters.
• Mounting cost and area can be cut in half. ■ Absolute Maximum Ratings Ta = 25℃ Tr1 Tr2 Collector-base voltage VCBO -60 60 V Collector-emitter voltage VCEO -50 50 V Emitter-base voltage VEBO -6 7 V Collector current IC -150 150 mA Power dissipation(Total) PD mW Operating and Storage and Temperature Range Tj, TSTG ℃ Parameter Symbol Rating Unit 300 -55 to +150 Unit: mm R Tr Tr (4) (5) (1)(2)(3)

SMD Type ICSMD Type Transistors ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC = -50 μA, IE = 0 -60 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = -1 mA, IB = 0 -50 V Emitter-Base Breakdown Voltage V(BR)EBO IC = -50 μA, IC = 0 -6 V Collector cutoff current ICBO VCB=-60V, IE=0 -100 nA Emitter cutoff current IEBO VEB=-6V, IC=0 -100 nA DC current gain hFE VCE=-6V, IC= -1mA 120 560 collector-emitter saturation voltage * VCE(sat) IC = -50 mA; IB = -5 mA -0.5 V Transition frequency fT IC = -2 mA; VCE = -12 V; f = 100 MHz 140 MHz Collector output capacitance Cob VCB=-12V, IE=0A, f=1MHz 5 pF Collector-Base Breakdown Voltage V(BR)CBO IC = 50 μA, IE = 0 60 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1 mA, IB = 0 50 V Emitter-Base Breakdown Voltage V(BR)EBO IC = 50 μA, IC = 0 7 V Collector cutoff current ICBO VCB=60V, IE=0 100 nA Emitter cutoff current IEBO VEB=7V, IC=0 100 nA DC current gain hFE VCE=6V, IC= 1mA 120 560 collector-emitter saturation voltage * VCE(sat) IC = 50 mA; IB = 5 mA 0.4 V Transition frequency fT IC = 2 mA; VCE = 12 V; f = 100 MHz 180 MHz Collector output capacitance Cob VCB=12V, IE=0A, f=1MHz 3.5 pF * pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. Transistor Tr1(PNP) Transistor Tr2(NPN) ■ Marking Marking Y1 FMY1A www.kexin.com.cn 2

www.kexin.com.cn 3 SMD Type ICSMD Type Transistors ■ Typical Characteristics Tr (PNP) −0.2 COLLECTOR CURRENT : Ic mA) −50 −20 −10 −0.5 −0.2 V CE BASE TO EMITTER VOLTAGE : V BE (V) Ta=100˚C 25˚C 40˚C Fig.1 Grounded emitter propagation characteristics −0.4 −1.20 −10 −0.8 −1.6 −2.0 −3.5µA −7.0 −10.5 −14.0 −17.5 −21.0 −24.5 −28.0 −31.5 I B Ta=25˚C −35.0 COLLECTOR CURRENT : I C (mA) COLLECTOR TO EMITTER VOLTAGE : V CE (V) Fig.2 Grounded emitter output characteristics ( 1 ) −40 −80 −20 −60 −100 I B Ta=25˚C −50µA −100 −150 −200 −250 −500 −450 −400 −350 −300 COLLECTOR CURRENT : I C (mA) COLLECTOR TO EMITTER VOLTAGE : V CE (V) Fig.3 Grounded emitter output characteristics ( 2 ) DC CURRENT GAIN : h FE COLLECTOR CURRENT : I C (mA) Fig.4 DC current gain vs. collector current ( 1 ) 500 200 100 Ta=25˚C V CE =−5V −3V −1V 500 200 100 V CE =−6V Ta=100˚C −40˚C 25˚C DC CURRENT GAIN : h FE COLLECTOR CURRENT : I C (mA) Fig.5 DC current gain vs. collector current ( 2 ) −0.1 −0.5 −0.2 −0.05 Ta=25˚C I C B =50 COLLECTOR CURRENT : I C (mA) COLLECTOR SATURATION VOLTAGE : V CE (sat) Fig.6 Collector-emitter saturation voltage vs. collector current ( 1 ) −0.1 −0.5 −0.2 −0.05 l C B =10 Ta=100˚C 25˚C −40˚C COLLECTOR SATURATION VOLTAGE : V CE (sat) (V) COLLECTOR CURRENT : I C (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( 2 ) 50 1000.5 20 100 200 500 1000 12 5 1 0 Ta=25˚C V CE 12V EMITTER CURRENT : I E (mA) TRANSITION FREQUENCY : f T (MHz) Fig.8 Gain bandwidth product vs. emitter current -0.5 -20 -1 -2 -5 -10 Cib Cob COLLECTOR TO BASE VOLTAGE : V CB (V) EMITTER TO BASE VOLTAGE : V EB (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Ta=25˚C f 1MHz I E =0A I C =0A FMY1A

SMD Type ICSMD Type Transistors ■ Typical Characteristics FMY1A www.kexin.com.cn 4 Tr (NPN) 0.1 0.2 0.5 Ta=100 V CE −55 COLLECTOR CURRENT : I C mA) BASE TO EMITTER VOLTAGE : V BE (V) Fig.10 Grounded emitter propagation characteristics 100 0.05mA 0.10mA 0.15mA 0.25mA 0.30mA 0.35mA 0.20mA Ta=25˚C I B =0A 0.40mA 0.50mA 0.45mA COLLECTOR CURRENT : I C (mA) COLLECTOR TO EMITTER VOLTAGE : V CE (V) Fig.11 Grounded emitter output characteristics ( 1 ) 4 8 12 16 I B =0A Ta=25˚C 3µA 6µA 9µA 12µA 15µA 18µA 21µA 24µA 27µA 30µA COLLECTOR CURRENT : I C (mA) COLLECTOR TO EMITTER VOLTAGE : V CE (V) Fig.12 Grounded emitter output characteristics ( 2 ) 0.2 0.5 1 2 5 10 20 50 100 200 100 200 500 V CE =5V Ta=25˚C DC CURRENT GAIN : h FE COLLECTOR CURRENT : I C (mA) Fig.13 DC current gain vs. collector current ( 1 ) 0.2 0.5 1 2 5 10 20 50 100 200 100 200 500 25˚C −55˚C Ta=100˚C V CE =5V DC CURRENT GAIN : h FE COLLECTOR CURRENT : I C (mA) Fig.14 DC current gain vs. collector current ( 2 ) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 I C B =50 Ta=25 COLLECTOR SATURATION VOLTAGE : V CE (sat) (V) COLLECTOR CURRENT : I C (mA) Fig.15 Collector-emitter saturation voltage vs. collector current ( 1 ) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 I C B =10 Ta=100˚C 25˚C −55˚C COLLECTOR SATURATION VOLTAGE : V CE (sat) (V) COLLECTOR CURRENT : I C (mA) Fig.16 Collector-emitter saturation voltage vs. collector current ( 2 ) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 I C B =50 Ta=100˚C 25˚C −55˚C COLLECTOR SATURATION VOLTAGE : V CE (sat) (V) COLLECTOR CURRENT : I C (mA) Fig.17 Collector-emitter saturation voltage vs. collector current ( 3 ) 100 200 500 Ta=25˚C V CE =6V EMITTER CURRENT : I E (mA) TRANSITION FREQUENCY : f T (MHz) Fig.18 Gain bandwidth product vs. emitter current

SMD Type ICSMD Type Transistors ■ Typical Characteristics FMY1A www.kexin.com.cn 5 0.2 0.5 1 2 5 10 20 50 Cib Cob COLLECTOR TO BASE VOLTAGE : V CB (V) EMITTER TO BASE VOLTAGE : V EB (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Fig.19 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Ta=25˚C f 1MHz I E =0A I C =0A 100 200 EMITTER CURRENT : I E (mA) Fig.20 Base-collector time constant vs. emitter current BASE COLLECTOR TIME CONSTANT : Cc r bb' (ps) Ta=25 f=32MH Z V CB =6V