FMW4 KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 SMD Type Transistors General purpose (Dual N Transistors) FMW4 ■ Features
- High breakdown voltage
- Power dissipation: PC=300mW
- Collector Curren: IC=50mA ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5.0 V Collector Current -Continuous IC 50 mA Collector Power Dissipation(TOTAL) PC 300 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-to-base breakdown voltage V(BR)CBO 120 V Collector-to-emitter breakdown voltage V(BR)CEO 120 V Emitter-to-base breakdown voltage V(BR)EBO 5.0 V Collector cutoff current IcBO VCB= 100 V , IE=0 0.5 μA Collector cutoff current IEBO VCE= 4.0V , IC=0 0.5 μA DC current gain hFE VCE= 60V, IC= 2.0mA 180 820 Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB= 1.0mA 0.5 V Transition frequency fT VCE= 12V, IC= 2mA,f=100MHz 140 MHz Unit: mm Ic= 50μA, E Ic= 1 mA， IB=0 IE= 50 μA， IC=0 I =0 PN ■ Marking Marking W4 FMW4