FMV30N60S1 ETC2 | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

easy to use (more controllabe switching dV/dt by Rg)

Applications

Outline Drawings [mm] Equivalent circuit schematic Gate(G) Source(S) Drain(D) Connection Gate Drain Source DIMENSIONS ARE IN MILLIMETERS. TO-220F(SLS) http://www.fujielectric.com/products/semiconductor/ Absolute Maximum Ratings at T C=25°C (unless otherwise specified) Description Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 600 V VDSX 600 V VGS=-30V Continuous Drain Current ID ±30 A Tc=25°C Note*1 ±19 A Tc=100°C Note*1 Pulsed Drain Current IDP ±90 A Gate-Source Voltage VGS ±30 V Repetitive and Non-Repetitive Maximum Avalanche Current IAR 6.6 A Note *2 Non-Repetitive Maximum Avalanche Energy EAS 849.2 mJ Note *3 Maximum Drain-Source dV/dt dVDS/dt 50 kV/μs VDS≤ 600V Peak Diode Recovery dV/dt dV/dt 12 kV/μs Note *4 Peak Diode Recovery -di/dt -di/dt 100 A/μs Note *5 Maximum Power Dissipation PD

2.16 W Ta=25°C

90 Tc=25°C

Operating and Storage Temperature range Tch 150 °C Tstg -55 to +150 °C Isolation Voltage Viso 2 kVrms t=60sec,f=60Hz Note *1 : Limited by maximum channel temperature. Note *2 : Tch≤150°C, See Fig.1 and Fig.2 Note *3 : Starting T ch=25°C, IAS=4A, L=97.3mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. Note *4 : IF≤-ID, -di/dt=100A/μs, V DD≤400V, Tch≤150°C. Note *5 : IF≤-ID, dV/dt=12kV/μs, VDD≤400V, Tch≤150°C. 07947 May 2012 Electrical Characteristics at T C=25°C (unless otherwise specified)

  • Static Ratings Description Symbol Conditions min. typ. max. Unit Drain-Source Breakdown Voltage BVDSS ID=250μA VGS=0V 600 - - V Gate Threshold Voltage VGS(th) ID=250μA VDS=VGS 2.5 3.0 3.5 V Zero Gate Voltage Drain Current IDSS VDS=600V VGS=0V Tch=25°C - - 25 μA VDS=480V VGS=0V Tch=125°C - - 250 Gate-Source Leakage Current IGSS VGS= ±30V VDS=0V - 10 100 nA Drain-Source On-State Resistance RDS(on) ID=15A VGS=10V - 0.106 0.125 Ω Gate resistance RG f=1MHz, open drain - 3.2 - Ω

http://www.fujielectric.com/products/semiconductor/ Thermal Characteristics Description Symbol min. typ. max. Unit Channel to Case Rth(ch-c) - - 1.39 °C/W Channel to Ambient Rth(ch-a) - - 58 °C/W

  • Dynamic Ratings Description Symbol Conditions min. typ. max. Unit Forward Transconductance gfs ID=15A VDS=25V 13 26 - S Input Capacitance Ciss VDS=10V VGS=0V f=1MHz - 2200 - pF Output Capacitance Coss - 4670 - Reverse Transfer Capacitance Crss - 430 - Effective output capacitance, energy related (Note *6) Co(er) VGS=0V VDS=0…480V - 127 - Effective output capacitance, time related (Note *7) C o(tr) VGS=0V VDS=0…480V ID=constant - 450 - Turn-On Time td(on) VDD=400V, VGS=10V ID=15A, RG=13Ω See Fig.3 and Fig.4 - 31 - nstr - 57 - Turn-Off Time td(off) - 136 - tf - 17 - Total Gate Charge QG VDD=480V, ID=30A VGS=10V See Fig.5 - 73 - nCGate-Source Charge QGS - 18 - Gate-Drain Charge QGD - 25 - Drain-Source crossover Charge QSW - 11.5 -
  • Reverse Diode Description Symbol Conditions min. typ. max. Unit Avalanche Capability IAV L=21.7mH, Tch=25°C See Fig.1 and Fig.2 6.6 - - A Diode Forward On-Voltage VSD IF=30A, VGS=0V Tch=25°C - 0.9 1.35 V Reverse Recovery Time trr IF=30A, VGS=0V VDD=400V -di/dt=100A/μs T ch=25°C See Fig.6 - 430 - ns Reverse Recovery Charge Qrr - 8.6 - μC Peak Reverse Recovery Current Irp - 38 - A Note *6 : Co(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 80% BV DSS. Note *7 : Co(tr) is a fixed capacitance that gives the same charging times as C oss while VDS is rising from 0 to 80% BV DSS.

http://www.fujielectric.com/products/semiconductor/ t PD Power loss waveform : Square waveform t PD t PD Power loss waveform : Square waveform ID [A] VDS [V] Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25°C 1ms 0 5 10 15 20 25 100 5.5V 20V10V 6.5V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80µs pulse test,Tch=25°C VGS=4.5V 0 20 40 60 80 100 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 5.5V5V 6V RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C 10V VGS=20V 0 10 20 30 40 50 60 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 5.5V 8V6V 5V4.5V RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test,Tch=150°C 10V VGS=20V 0 5 10 15 20 25 5.5V 20V10V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80µs pulse test,Tch=150°C VGS=4.5V 0 25 50 75 100 125 150 100 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 1µs 10µs 100µs

http://www.fujielectric.com/products/semiconductor/ -50 -25 0 25 50 75 100 125 150 typ. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS(th) [V] Tch [°C] -50 -25 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=15A,VGS=10V 0 1 2 3 4 5 6 7 8 9 10 1E-3 0.01 0.1 100 Tch=25℃150℃ ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80µs pulse test,VDS=25V 0.1 1 10 100 0.1 100 150℃ Tch=25℃ gfs [S] ID [A] Typical Transconductance gfs=f(ID):80µs pulse test,VDS=25V 0.1 100 Tch=25℃150℃ IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test C [pF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss

http://www.fujielectric.com/products/semiconductor/ 0 100 200 300 400 500 600 Typical Coss stored energy Eoss [uJ] VDS [V] Typical Switching Characteristics vs. ID Tch=25°C t=f(ID):Vdd=400V,VGS=10V/0V,RG=13Ω, L=500uH td(on) tr tf td(off) t [ns] ID [A] 0 10 20 30 40 50 60 70 80 90 100 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=30A,Vdd=480V,Tch=25°C VGS [V] Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [℃/W] t [sec] 0 25 50 75 100 125 150 200 400 600 800 1000 1200 1400 1600 1800 2000 IAS=6.6A IAS=4.0A IAS=2.0A EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. startingTch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=6.6A

http://www.fujielectric.com/products/semiconductor/ Fig.1 Avalanche Test circuit Fig.2 Operating waveforms of Avalanche Test Fig.3 Switching Test circuit Fig.4 Operating waveform of Switching Test VGSVDS VDS ×90% td(on) tr td(off) tf VGS ×10% VDS ×10% VGS ×90% VDS ×10% VDS ×90% Fig.5 Operating waveform of Gate charge Test Fig.6 Operating waveform of Body diode Recovery Test IF trr IRP IRP×10% trr Qrr=∫ ir・dt0 VGS VDS QG QGS QGD VGS,VDS Qg QSW 10V IAV BVDSS VDS ID VGS +10V -15V D.U.T (MOSFET) Rg PG Diode VDD L Rg L D.U.T VDD

http://www.fujielectric.com/products/semiconductor/ Outview: TO-220F(SLS) Package Trademark Type name Date code & Lot No. Y: Last digit of year M: Month code 1~9 and O,N,D NNN: Lot. serial number Under bar of date code : means lead-free mark YMNNN * The font (font type,size) and the trademark-size might be actually different. Country of origin mark. " " (Blank): Japan P : Philippines 30N60S1 Outview : TO-220F(SLS) Package Marking Connection Gate Drain Source DIMENSIONS ARE IN MILLIMETERS. Marking

http://www.fujielectric.com/products/semiconductor/ WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2012. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

  • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
  • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
  • Transportation equipment (mounted on cars and ships) • Trunk communications equipment
  • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
  • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
  • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation).
  • Space equipment • Aeronautic equipment • Nuclear control equipment
  • Submarine repeater equipment 7. Copyright ©1996-2012 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.